Presents the 2022 author/subject index for this issue of the publication.

This letter presents a novel vertical waveguide-to-microstrip self-diplexing transition for dual-band applications. The transition is realized with standard printed circuit board (PCB) manufacturing processing, making it suitable for mass production and practical applications. A standard waveguide is screwed on the topside of the stack-up. Dual-band self-diplexing operation is achieved by coupling

A power combined wideband power amplifier (PA) covering the $J$ -band (220–320 GHz) is presented in 130-nm BiCMOS technology. The input power is split by two cascaded 1-to-2 power splitters with amplification stages in-between. The four split signals drive four output stages, which have their outputs combined within a 4-way zero-degree combiner. The splitting and combining networks also incorporate

In this letter, we design a magnetically coupled resonant wireless power transfer (MCR-WPT) system on the conformal cylindrical surface based on the flexible printed circuit (FPC) coils. The coil has the advantages of small size, lightweight, and high bendability. We combine mathematics and simulations to explore the relationship between the self-inductance/mutual inductance of the flexible coil and

An air-filled mode selective transmission line (AF-MSTL) consisting of an opened groove gap waveguide (GWG) and an inverted coplanar waveguide (CPW) is proposed in this letter. By using the electromagnetic band gap (EBG) structure, the electrical contacts of AF-MSTL are not required during the assembly process. To verify the design, the AF-MSTL prototype, connected to two designed grounded-CPW (GCPW)

This letter presents a four-way power combined $D$ -band power amplifier (PA) in 0.13- $\mu \text{m}$ SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency

A full characterization and modeling methodology for the electrical transitions introduced by coaxial connectors serving as interfaces for accessing microstrip (MS) lines is presented and verified up to 40 GHz. The associated two-port network parameters are obtained from measurements performed on MS lines of different lengths. Subsequently, two circuit models for the transition are proposed and used

This letter presents a 0.9–1.8-GHz cryo-CMOS low-noise amplifier (LNA) built-in standard 65-nm CMOS for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and demonstrate that the LNA nears its minimum noise temperature at the desired frequency range. The proposed LNA operates at 20 K, consumes 115 mW of power, and provides a 37.2

This Special Issue of IEEE Microwave and Wireless Components Letters (MWCL) represents the second year that we include selected papers from the IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium (IMS). The IEEE MTT-S IMS is the MTT Society’s flagship conference and the world’s largest meeting on microwave technology. This year, it is to be held in Denver, CO, USA

Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

A millimeter-wave (MMW) variable-gain power amplifier (VGPA) with $P_{\mathrm {1\,dB}}$ improvement technique is proposed. The proposed VGPA consists of a postdistortion power amplifier (PDPA) and a variable-gain amplifier (VGA), for realizing high output power 1-dB compression point ( $P_{\mathrm {1\,dB}}$ ) and variable gain, respectively. To improve the $P_{\mathrm {1\,dB}}$ performances, a postdistortion

In this letter, the authors propose a novel dual-band waveguide filter with multiple transmission zeros (TZs) based on multi-coupled resonators in the rectangular waveguide using TE102- and TE103-modes. The dual-band of the filter is implemented by five oversized resonant cavities working in TE102- and TE103-modes with the central frequencies of the pass-bands close to 30.1 and 38.2 GHz, respectively

In this letter, low-phase-nose multicore class-F voltage-controlled oscillators (VCOs) using coupled-lined-based synchronization topology are proposed. Compared to traditional resistance-coupled multicore VCOs, the proposed coupled-line-based topology improves the $Q$ of the small inductors in the millimeter-wave frequency range. Mode ambiguity is eliminated for a robust oscillation startup. Quad-core

This letter presents a transition from a top layer grounded coplanar waveguide (GCPW) to an inner layer air-filled substrate-integrated waveguide (AFSIW). Such type of transition is crucial for the interconnection of top layer surface-mounted radio-frequency integrated circuits (RFICs), toward the integration of complete microwave and millimeter-wave systems taking advantage of the low-cost and high-performance

This paper presents a modified post-distortion (PD) linearization technique for cascode common-gate low noise amplifiers (CG-LNAs) working at high frequencies up to millimeter-wave band. This technique utilizes an auxiliary transistor together with an inter-stage inductor to suppress the third order distortion without degrading gain. The input third order intercept point (IIP3) of the linearized CG-LNA

This letter presents a 26–34.5-GHz power amplifier (PA) fabricated in 65-nm bulk CMOS with a core area of 0.338 mm2. To reduce the mismatch in the conversion between single-ended and differential signals, the symmetry of the baluns is analyzed in detail. To achieve a broadband operation, a wideband source impedance matching network is introduced. The measured small signal gain is 25.1 dB, and the proposed

In this letter, a packaged bandpass filter (BPF) with a compact size of $1.5 \times 1.5 \times 0.315$ mm3 operating at 28 GHz is proposed. This BPF is implemented based on a multilayers printed circuit board (PCB) fabrication process with ultra-thin substrate. With the packaged configuration, the filter can not only reduce the circuit size and component insertion loss, but also eliminate the effect

This letter presents a triple-quasi-TEM-resonance dielectric cavity for compact bandpass filter design. The proposed dielectric cavity is silver coated and has three blind holes which form three distinct quasi-TEM mode resonators. The external coupling structure for the resonator is realized by tapping hole. The inter-resonator couplings are realized and controlled by slots on the outer surfaces of

This letter presents a low noise amplifier (LNA) with a 3-dB gain bandwidth (3-dB BW) of 18–44 GHz in 65-nm CMOS technology. By deriving an analytical equation of input impedance, a co-design methodology for the first two stages of LNA that can simultaneously achieve broadband input matching and low noise figure (NF) is implemented. Weakly coupled asymmetric transformers that introduce a section of

In this letter, a fully integrated variable gain low noise amplifier (VG-LNA) implemented in 90-nm CMOS process for E{E} -band millimeter-wave (MMW) backhaul communications is presented. The amplifier consists of two current-reused stages followed by a cascode stage and a current-steering cascode stage with gmg_{m} -boosting and body-floating for higher gain. This work achieves a small-signal gain

This letter presents a highly linear 18–42 GHz single-pole double-throw (SPDT) switch based on the traveling-wave concept for 5G applications. An RF switch for 5G applications requires low insertion loss, high isolation, and high linearity in both Tx/Rx modes. To achieve wideband performance and high linearity, the traveling-wave concept and a 150-nm GaN high electron mobility transistor (HEMT) process

In this letter, we analyze a capacitive coupler for wireless power transfer (WPT) to intravascular implant devices using a stent that contacts the vessel wall for vasodilation as a power receiver. We focus on the effect of conductivity on the transfer efficiency of capacitive WPT and verify the relationship between the maximum transfer efficiency and conductivity based on an equivalent circuit, including

Herein, based on a rounded rectangle p-i-n diode with the minimum radius allowed by the process and a 0.8- μm\boldsymbol {\mu }\mathbf {m} thick I-layer, a high-power wideband monolithic limiter was realized by using GaAs p-i-n process. At 16 GHz, the maximum handling power of the monolithic limiter is up to 400 W (56 dBm), while the output power is less than 45 mW (16.5 dBm). Meantime, the insertion

This work presents a dual-band complementary metal–oxide–semiconductor (CMOS) up-conversion mixer that operates in the frequency range of 24.25–40 GHz. To realize highly linear characteristics at both the 28- and 39-GHz bands, the proposed design uses the single-stacked transistor configuration as well as band-switchable inductor and transformer loads. The up-conversion mixer comprises an intermediate

This work deals with new design techniques of RF to dc converter coupled with commercial dc/dc converters, for efficient wireless power transfer. The dc/dc boost converter operates as current sinks, thus imposing challenging design constraints. We investigate the impact of applying a multi-sine RF input signal on power transfer efficiency, involving a source-pull optimization to maximize RF to dc energy

In this letter, a full-band balanced frequency doubler covering 140–220 GHz range is reported. To feed the Schottky barrier diodes (SBDs) with a reverse phase, a novel inline waveguide-to-microstrip (WG-to-MS) transition is adopted, which is used as mode conversion and broadband balun simultaneously. The generated second-harmonic is extracted directly by a taper waveguide, which also serves as broadband

The high frequency and noise performance ( TMINT_{\mathrm {MIN}} , NFMIN, RnR_{n} , and ZsoptZ_{\mathrm {sopt}} ) of SiGe heterojunction bipolar transistors (HBTs) are characterized for the first time from dc and SS -parameter measurements up to 70 GHz and from 2 to 400 K. Significantly improved current gain ~10 000, minimum noise temperature, TMINT_{\mathrm {MIN}} (< 1 K below 8.5 GHz), MAG, fTf_{T}

The inverted scanning microwave microscope (iSMM) is a recently developed variety of scanning microprobe microscopes. Similar to a scanning microwave microscope (SMM), the iSMM is sensitive to not only surface structure, but also electromagnetic properties below the surface. Different from the SMM, the iSMM can be converted from any scanning probe microscope, such as an atomic force microscope (AFM)

A novel waveguide-to-coaxial transition with magnetic closed loop has been developed. A conventional rectangular waveguide (RWG) directly mounts on a printed circuit board (PCB) and actualizes the transition from the RWG to the coaxial line (CL). Due to the magnetic coupling structure implanted in the PCB, the size of the transition is similar to the aperture of the RWG. After studying the structural

This letter presents the design and experimental characterization of a GaN–Si monolithic Doherty power amplifier (PA) for the KaKa -band satellite downlink. The fabricated amplifier favorably compares with the current state of the art, achieving from 16.3 to 20.3 GHz (4 GHz, 22% relative bandwidth), a record band to date, 36.6–37.7-dBm output power, 23%–31% power-added efficiency, 18–22-dB gain at

This letter presents new configurations of stubbed waveguide cavities for the realization of pseudo-elliptic and self-equalized filters. The basic structure consists of a main TE102/TE201 dual-mode cavity that is loaded with a pair of waveguide stubs. The two stubs are located at the top and bottom walls of the cavity while always being parallel and in-line to each other. Such a two-stub arrangement

We present a new and improved formulation of Rytov approximation (RA) using the theory of ray tracing in low loss media for solving the direct scattering problem. The resultant model provides an accurate prediction of wave scattering in the presence of electrically large scatterers with high permittivity and small loss tangent. The high validity range and the straightforward linear formulation of the

Power-handling capability of bulk CMOS-based single-pole double-throw (SPDT) switch operating in millimeter-wave (mm-wave) and subterahertz region is significantly limited by the reduced threshold voltage of deeply scaled transistors. A unique design technique based on impedance transformation network (ITN) is presented in this work, which improves 1-dB compression point, namely P1dB, without deteriorating

This letter introduces a novel phase detector (PD) for suppressing the reference spur in a 40 GHz integer- NN phase-locked loop (PLL). Coined as a spur-compensation phase detector (SCPD), the proposed SCPD duplicates itself to an auxiliary path for an edge-combined phase alignment, such that the spurs generated by the two paths mutually compensate for each other, achieving a net effect of spur canceling

In this article, the simultaneous perturbation stochastic approximation (SPSA) algorithm is proposed to optimize the threshold of the canonical piecewise linear (CPL) function-based models for radio frequency (RF) power transistors. Compared with the existing standard CPL-function-based model, the proposed optimization technique can greatly improve model performance. Two different CPL-based models

In this letter, we present an adaptive method for linearizing radio frequency (RF) power amplifier (PA). The input and output error is segmented in light of the signal magnitude to improve the convergence speed of the linearizer’s parameter optimization. The feedback bandwidth and the sampling rate of the feedback loop are only 1/8 of the input signal with the proposed method. Experimental results

This letter aims to provide an analysis of selecting the optimal coil position under a dynamic transmitting coil (Tx-coil) to improve the performance of a dual-receiver magnetic resonance wireless power transfer (MR-WPT) system. The expressions of power transfer efficiency (PTE) and optimal load are derived using equivalent circuit model (ECM), and the relationship between coils position and PTE under

In this letter, we report on the development of high-gain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a nine-stage amplifier circuit are described, which are based on gain cells in cascode configuration. With more than 30 dB of measured gain in the frequency

As the most important organ of human body, heart has many measures and indicators to assess the cardiac function in clinic. Ventricular systolic time intervals (STIs) are of major relevance in providing crucial information regarding cardiovascular state. However, the existing measurement technologies are costly, complicated to operate, and also require contact sensors. Based on the human cardiovascular

The design and fabrication of a low-cost, wideband fully 3-D-printed coaxial line with air-dielectric is demonstrated. Support of the inner conductor is achieved with shorted stubs, the shape and length of which are determined with electrical performance and manufacturing requirements in mind. Direct metal laser sintering (DMLS) fabrication is leveraged for manufacturing, enabling fully monolithic

In this letter, a novel structure is proposed for designing dual-band (DB) concurrent operation for the single shunt-diode rectifier configuration, at two highly spaced separate frequency bands, that is, 0.915 and 2.45 GHz for wireless power transfer (WPT). The structure consists of two main parts. The first part uses three transmission lines (TLINs) to match simultaneously optimal impedances from

The amplitude and width of the ultrashort pulses depend on the performance of the generator’s electronic elements. The usage of step recovery diodes (SRDs) with picosecond switching time can lead to a significant increase in device cost. In this letter, nonlinear transmission line (NLTL) was built and tested using commercial-off-the-shelf components to improve the performance of the generator that

Distributed MIMO (D-MIMO) with synchronized access points (APs) is a promising architecture for both communications and localization in 5G and beyond systems. In this letter, we develop a time-difference-of-arrival (TDOA)-based indoor localization system using a 2.35-GHz high-speed sigma-delta-over-fiber (SDoF) D-MIMO testbed with 40-MHz bandwidth, exploiting the fully synchronized nature of the APs

Measurement results of uniaxially anisotropic materials performed with the aid of a plano-concave Fabry–Perot open resonator in the 20–50 GHz frequency range are presented and discussed in this letter. It is shown that a linear polarization of Gaussian modes applied in the characterization allows extracting in-plane complex permittivity of such materials as crystals and foils in a single measurement

This letter presents a K{K} -band 0.1- μm\mu \text{m} GaN on Si 10-W high-power amplifier (HPA) for the downlink of the satellite communication system. The proposed HPA uses the driver-stage transistor to generate a half-sinusoidal waveform that is delivered to the power-stage transistor. The half-sinusoidal waveform combines the input nonlinearity of the power-stage transistor to simultaneously improve

A design methodology of a CC -band high-efficiency Doherty power amplifier (DPA) with harmonic control is presented in this letter. The equivalent parasitic network (EPN) of the packaged device is constructed by a deembedding technique. The phase delay caused by the transistor parasitics is calculated using the scattering matrix of the EPN. Besides, the influence of the phase delay on DPA design is

This letter presents a nanowatt-level detector-first wakeup receiver using microelectromechanical system (MEMS)-based matching network (MN). The aluminum nitride (AlN) piezoelectric MEMS resonator is utilized to implement the impedance MN for high passive gain to improve the receiver sensitivity. The high- QQ MEMS-based MN also greatly improves the receiver’s out-of-band interference rejection. Gate-biased

This letter presents the design of a 200–250-GHz compact vector modulator (VM) phase shifter in a 0.13- μm\mu \text{m} SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. A compact, low-loss, and wideband differential quadrature coupler is used to generate differential I/Q signals. The design details of the millimeter-wave wideband differential coupler is presented and compared

This letter presents an ultra-compact gm-boost low noise amplifier (LNA) with only one multi-coupled transformer for the first time. Implemented in 65-nm CMOS process, the proposed LNA achieves a measured peak gain of 10.5 dB with its 3-dB bandwidth ranging from 21 to 34.5 GHz and a noise figure (NF) of 2.5 dB at 28 GHz, while consuming 4-mW dc power. Based on the superior compactness of the transformer

A novel cascaded dispersive delay structure based on a periodic glide symmetric stub-loaded microstrip transmission line is presented. Two group delay peaks are superposed to realize a group delay response that illustrates linear characteristics versus frequency. Two examples with slopes 0.83 and 2 ns/GHz, respectively, are proposed. Verified by experiments, the simulated and measured group delays

We report the design, fabrication, and prototype demonstration of a 200-GHz polarization-resolved quasi-optical detector employing monolithically integrated zero-bias heterostructure backward diodes (HBDs). In this design, polarization resolution is achieved by orthogonally integrating the detectors with a planar dual-polarization annular-slot antenna. The detector chip was fabricated and mounted on

In this letter, a filtering T-type switch is proposed for the first time, which exhibits signal routing reconfigurability for crossover-channel (State 1) and adjacent-channel (State 2 or 3) applications. The circuit consists of four T-shaped feeding lines, eight short-ended half-wavelength resonators, and a ring resonator. The p-i-n diodes are loaded to the resonators for switching ON and OFF the signal

In this letter, a microstrip negative-group-delay (NGD) admittance inverter (J-inverter) is proposed to implement a self-equalized linear-phase absorptive bandpass filter (ABPF). It is revealed that this NGD J-inverter, being composed of a coupled-line loaded with a lumped resistor and an open-circuited stub, has an NGD pit in its frequency response. The superposition of the NGD pits associated with

Carrier-free ultra-wideband impulse radars are increasingly used in target detection due to their high resolution and strong interference capabilities. This letter designs a deep residual shrinkage network to achieve the multiangle intelligent vehicle recognition. First, geometric models of the armored car, the truck, and the tank are established. Echo signals under the excitation of the carrier-free

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Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

An S-band high-power tunable attenuator (HPTA) is proposed to adjust the output power of a 2.5 MW magnetron to the range of 40–2400 kW, which is equal to 0.17–17.78 dB attenuation. Additionally, the attenuation control accuracy is better than 0.9 dB/mm. The output power of the magnetron tube is changed by its current, which leads to the output frequency. Thus, the magnetron tube is not suitable for

This letter presents a 220–261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12–15, 110–135, and 216–270 GHz), two frequency triplers (36–45 and 108–135 GHz), a third-order Chebyshev bandpass filter (36–45 GHz), and a modified Gilbert-cell-based frequency doubler (216–270 GHz). The peak output power is about 8 dBm at 240 GHz with a 3-dB bandwidth

The Fourier series is introduced as a transfer function (TF) in the artificial neural network (ANN) for parametric modeling of microwave filters in this letter. The reported pole-residue-based TF leads to an order-changing problem of input samples from vector fitting, which is usually solved with an order-tracking technique or data classification. The proposed Fourier series-based TF does not have