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A probe that measures more neurons across the brain Nat. Electron. (IF 33.7) Pub Date : 2024-08-20 Katharina Zeissler
The researchers — who are based at Peking University and the Shenzhen-Hong Kong Institute of Brain Science — fabricated the probe by depositing an electrode array on an ultrathin, flexible plastic film and rolling it onto a tungsten microwire to form a cylindrical shank. The interconnecting metal lines of the probe are embedded inside the scroll while the recording electrodes and the input/output pads
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Organic photodetectors that work underwater Nat. Electron. (IF 33.7) Pub Date : 2024-08-19 Matthew Parker
The researchers — who are based at the University of Tokyo and RIKEN — blended an organic photoactive material with an adhesive elastomeric matrix. This resulted in a photoactive layer containing connected polymer-rich and isolated elastomer-rich phases, which had high adhesion at the top and bottom interfaces (to prevent water ingress) while retaining good charge transport. The photodetector, which
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Lynn Conway (1938–2024) Nat. Electron. (IF 33.7) Pub Date : 2024-08-19 Kenneth Shepard
Computer engineer and transgender advocate who shaped the way VLSI systems are designed.
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Tuning electronic circuits close to absolute zero using quantum paraelectric varactors Nat. Electron. (IF 33.7) Pub Date : 2024-08-14
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A scalable universal Ising machine based on interaction-centric storage and compute-in-memory Nat. Electron. (IF 33.7) Pub Date : 2024-08-13 Wenshuo Yue, Teng Zhang, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Yibo Lin, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang
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Hardware accelerators based on nanotube transistors Nat. Electron. (IF 33.7) Pub Date : 2024-08-12 Kaixiang Kang, Lingzhi Wu, Min Li, Jianwen Zhao
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Priorities for net-zero web services Nat. Electron. (IF 33.7) Pub Date : 2024-08-12 Mohit Arora, Iain McClenaghan, Lydia Wozniak
The complexity of the infrastructure underpinning the modern Internet has led to a lack of clarity on how to measure the energy consumption of web services and achieve sustainable web design. It is now crucial to redirect sustainability efforts in the sector towards more effective interventions.
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A scalable integration process for ultrafast two-dimensional flash memory Nat. Electron. (IF 33.7) Pub Date : 2024-08-12 Yongbo Jiang, Chunsen Liu, Zhenyuan Cao, Chuhang Li, Zizheng Liu, Chong Wang, Yutong Xiang, Peng Zhou
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A subdural CMOS optical device for bidirectional neural interfacing Nat. Electron. (IF 33.7) Pub Date : 2024-08-12 Eric H. Pollmann, Heyu Yin, Ilke Uguz, Agrita Dubey, Katie E. Wingel, John S. Choi, Sajjad Moazeni, Yatin Gilhotra, Victoria Andino-Pavlovsky, Adam Banees, Abhinav Parihar, Vivek Boominathan, Jacob T. Robinson, Ashok Veeraraghavan, Vincent A. Pieribone, Bijan Pesaran, Kenneth L. Shepard
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An antiferromagnetic diode effect in even-layered MnBi2Te4 Nat. Electron. (IF 33.7) Pub Date : 2024-08-12 Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien Bérubé, Thao Dinh, Houchen Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Arun Bansil, Hsin Lin, Tay-Rong Chang, Amir Yacoby, Ni Ni, Liang Fu, Qiong Ma, Su-Yang Xu
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Free-standing printed electronics with direct ink writing Nat. Electron. (IF 33.7) Pub Date : 2024-08-06 Yang Yang
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In-sensor visual adaptation across the spectrum Nat. Electron. (IF 33.7) Pub Date : 2024-08-05 Fang Wang, Jin Wang, Runzhang Xie, Weida Hu
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A biodegradable and self-deployable electronic tent electrode for brain cortex interfacing Nat. Electron. (IF 33.7) Pub Date : 2024-08-05 Jae-Young Bae, Gyeong-Seok Hwang, Young-Seo Kim, Jooik Jeon, Minseong Chae, Joon-Woo Kim, Sian Lee, Seongchan Kim, Soo-Hwan Lee, Sung-Geun Choi, Ju-Yong Lee, Jae-Hwan Lee, Kyung-Sub Kim, Joo-Hyeon Park, Woo-Jin Lee, Yu-Chan Kim, Kang-Sik Lee, Jeonghyun Kim, Hyojin Lee, Jung Keun Hyun, Ju-Young Kim, Seung-Kyun Kang
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Quantum paraelectric varactors for radiofrequency measurements at millikelvin temperatures Nat. Electron. (IF 33.7) Pub Date : 2024-08-05 P. Apostolidis, B. J. Villis, J. F. Chittock-Wood, J. M. Powell, A. Baumgartner, V. Vesterinen, S. Simbierowicz, J. Hassel, M. R. Buitelaar
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Sensitive spin-rectifier-based rectenna and on-chip array for wireless energy harvesting Nat. Electron. (IF 33.7) Pub Date : 2024-07-30
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Emerging reporting standards Nat. Electron. (IF 33.7) Pub Date : 2024-07-29
Steps are required to improve the assessment, reporting and benchmarking of devices based on emerging semiconductor materials.
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Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides Nat. Electron. (IF 33.7) Pub Date : 2024-07-29 Yan Wang, Soumya Sarkar, Han Yan, Manish Chhowalla
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Hardware design and the fairness of a neural network Nat. Electron. (IF 33.7) Pub Date : 2024-07-25 Yuanbo Guo, Zheyu Yan, Xiaoting Yu, Qingpeng Kong, Joy Xie, Kevin Luo, Dewen Zeng, Yawen Wu, Zhenge Jia, Yiyu Shi
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Tension-driven three-dimensional printing of free-standing Field’s metal structures Nat. Electron. (IF 33.7) Pub Date : 2024-07-25 Shaohua Ling, Xi Tian, Qihang Zeng, Zhihang Qin, Selman A. Kurt, Yu Jun Tan, Jerry Y. H. Fuh, Zhuangjian Liu, Michael D. Dickey, John S. Ho, Benjamin C. K. Tee
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2D transistors feel the squeeze Nat. Electron. (IF 33.7) Pub Date : 2024-07-24 Stuart Thomas
The scaling of silicon complementary metal–oxide–semiconductor (CMOS) technology has become increasingly challenging as transistor device channels become smaller and more difficult to electrostatically control. To overcome these issues, researchers have explored the potential of atomically thick channel materials, such as monolayers of the transition metal dichalcogenide molybdenum disulfide (MoS2)
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Powering from behind Nat. Electron. (IF 33.7) Pub Date : 2024-07-24 Stuart Thomas
Backside power distribution network schemes — where power delivery in integrated circuits is relocated to the backside of the silicon wafer — are expected to help improve power efficiency, performance and, potentially, scaling in complementary metal–oxide–semiconductor (CMOS) circuits, particularly in the next generation of silicon nanosheet-based transistor technologies. However, how to best implement
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Nanoscale spin rectifiers for harvesting ambient radiofrequency energy Nat. Electron. (IF 33.7) Pub Date : 2024-07-24 Raghav Sharma, Tung Ngo, Eleonora Raimondo, Anna Giordano, Junta Igarashi, Butsurin Jinnai, Shishun Zhao, Jiayu Lei, Yong-Xin Guo, Giovanni Finocchio, Shunsuke Fukami, Hideo Ohno, Hyunsoo Yang
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Intel’s 2.5D Foveros gains a capacitor Nat. Electron. (IF 33.7) Pub Date : 2024-07-23 Katharina Zeissler
Three-dimensional (3D) stacking of chiplets into a single system-in-package can lead to scaling opportunities beyond the conventional scaling of device dimensions. In this approach, computing elements are connected in a face-to-face die configuration by a silicon interposer using through-silicon via (TSV) technology and microbumps. However, process optimization is crucial to achieve good responsiveness
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A 640 Gb s–1 transceiver Nat. Electron. (IF 33.7) Pub Date : 2024-07-22 Matthew Parker
Rising demands on wireless communications technology means that the development of next-generation wireless systems is increasingly focused on the use of millimetre and sub-terahertz frequency bands. Chenxin Liu and colleagues at the Tokyo Institute of Technology now report a transceiver chipset that is made using a 65 nm complementary metal–oxide–semiconductor (CMOS) process and operates in the D-band
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All-oxide transistors for vertical stacking Nat. Electron. (IF 33.7) Pub Date : 2024-07-22 Katharina Zeissler
In-memory computing could be used to improve energy efficiency but requires high-density memory cells. One way to increase memory density, while maintaining the same footprint, is to stack memory cells on top of each other. Although stacking is possible using conventional semiconductors (such as polycrystalline silicon), fabrication challenges (such as sidewall uniformity, doping profile variation
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Oxide dielectrics that grow on 2D materials Nat. Electron. (IF 33.7) Pub Date : 2024-07-22 Matthew Parker
In the first method, the researchers — who are based at Stanford University and Yonsei University — added a sub-1-nm-thick evaporated silicon seed layer, which oxidizes to silicon dioxide (SiO2), to MoS2 or WSe2. This was then followed by ALD growth of a high-κ dielectric, 5-nm-thick hafnium oxide (HfO2), with the combined EOT of the stack being 0.9 nm. The MoS2 FETs showed a subthreshold swing of
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A carbon-nanotube-based tensor processing unit Nat. Electron. (IF 33.7) Pub Date : 2024-07-22 Jia Si, Panpan Zhang, Chenyi Zhao, Dongyi Lin, Lin Xu, Haitao Xu, Lijun Liu, Jianhua Jiang, Lian-Mao Peng, Zhiyong Zhang
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Terahertz electronics generate and detect graphene plasmon polaritons Nat. Electron. (IF 33.7) Pub Date : 2024-07-17
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Reporting Hall effect measurements of charge carrier mobility in emerging materials Nat. Electron. (IF 33.7) Pub Date : 2024-07-17 Vladimir Bruevich, Vitaly Podzorov
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On-chip transfer of ultrashort graphene plasmon wave packets using terahertz electronics Nat. Electron. (IF 33.7) Pub Date : 2024-07-17 Katsumasa Yoshioka, Guillaume Bernard, Taro Wakamura, Masayuki Hashisaka, Ken-ichi Sasaki, Satoshi Sasaki, Kenji Watanabe, Takashi Taniguchi, Norio Kumada
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Bioinspired in-sensor spectral adaptation for perceiving spectrally distinctive features Nat. Electron. (IF 33.7) Pub Date : 2024-07-15 Bangsen Ouyang, Jialiang Wang, Guang Zeng, Jianmin Yan, Yue Zhou, Xixi Jiang, Bangjie Shao, Yang Chai
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A polymer–semiconductor–ceramic cantilever for high-sensitivity fluid-compatible microelectromechanical systems Nat. Electron. (IF 33.7) Pub Date : 2024-07-15 Nahid Hosseini, Matthias Neuenschwander, Jonathan D. Adams, Santiago H. Andany, Oliver Peric, Marcel Winhold, Maria Carmen Giordano, Vinayak Shantaram Bhat, Marcos Penedo, Dirk Grundler, Georg E. Fantner
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Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses Nat. Electron. (IF 33.7) Pub Date : 2024-07-08 Lei Zhang, Zhaochao Liu, Wei Ai, Jiabiao Chen, Zunxian Lv, Bing Wang, Mingjian Yang, Feng Luo, Jinxiong Wu
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Three-dimensional integrated metal-oxide transistors Nat. Electron. (IF 33.7) Pub Date : 2024-07-08 Saravanan Yuvaraja, Hendrik Faber, Mritunjay Kumar, Na Xiao, Glen Isaac Maciel García, Xiao Tang, Thomas D. Anthopoulos, Xiaohang Li
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Organic electrochemical neurons for neuromorphic perception Nat. Electron. (IF 33.7) Pub Date : 2024-07-08 Padinhare Cholakkal Harikesh, Deyu Tu, Simone Fabiano
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A microsized optical spectrometer based on an organic photodetector with an electrically tunable spectral response Nat. Electron. (IF 33.7) Pub Date : 2024-07-01 Xie He, Yuanzhe Li, Hui Yu, Guodong Zhou, Lingyi Ke, Hin-Lap Yip, Ni Zhao
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Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications Nat. Electron. (IF 33.7) Pub Date : 2024-07-01 Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza
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Permeable, three-dimensional integrated electronic skins with stretchable hybrid liquid metal solders Nat. Electron. (IF 33.7) Pub Date : 2024-07-01 Qiuna Zhuang, Kuanming Yao, Chi Zhang, Xian Song, Jingkun Zhou, Yufei Zhang, Qiyao Huang, Yizhao Zhou, Xinge Yu, Zijian Zheng
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Advanced packaging of chiplets for future computing needs Nat. Electron. (IF 33.7) Pub Date : 2024-06-27 Debendra Das Sharma, Ravi V. Mahajan
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Building 3D integrated circuits with electronics and photonics Nat. Electron. (IF 33.7) Pub Date : 2024-06-27 Chao Xiang, John E. Bowers
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Build it up Nat. Electron. (IF 33.7) Pub Date : 2024-06-27
Three-dimensional electronics is our 2024 technology of the year.
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2D materials can unlock single-crystal-based monolithic 3D integration Nat. Electron. (IF 33.7) Pub Date : 2024-06-27 Kuangye Lu, Jaewoo Shim, Ki Seok Kim, Sang Won Kim, Jeehwan Kim
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Scaling neuromorphic systems with 3D technologies Nat. Electron. (IF 33.7) Pub Date : 2024-06-27 Elisa Vianello, Melika Payvand
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Perovskites, camera, action! Nat. Electron. (IF 33.7) Pub Date : 2024-06-27 Stuart Thomas
The researchers — who are based at the Hong Kong University of Science and Technology — integrated a porous alumina membrane below the surface of the pinhole array. This membrane was used as a template to fabricate a high-density perovskite nanowire array of photoreceptors that mimic the ommatidia design in biological compound eyes. Metal wires were used to electrically transmit visual signals for
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Doping for ohmic contacts in 2D transistors Nat. Electron. (IF 33.7) Pub Date : 2024-06-27 Peng Wu, Jing Kong
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Observation of orbital pumping Nat. Electron. (IF 33.7) Pub Date : 2024-06-27 Hiroki Hayashi, Dongwook Go, Satoshi Haku, Yuriy Mokrousov, Kazuya Ando
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3D integration proceeds tier-by-tier Nat. Electron. (IF 33.7) Pub Date : 2024-06-19 Matthew Parker
Yuan Liu and colleagues at Hunan University now report a one-step van der Waals integration method for the monolithic 3D integration of 2D materials. In their approach, all the components of the circuit tier are fabricated on a sacrificial wafer. This includes chemical vapour deposition-grown MoS2, the drain and gate electrodes, the gate dielectric (10-nm-thick Al2O3) and inter-tier dielectric, and
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Pressure-stamped stretchable electronics using a nanofibre membrane containing semi-embedded liquid metal particles Nat. Electron. (IF 33.7) Pub Date : 2024-06-19 Sijie Zheng, Xiaowei Wang, Weizheng Li, Ziyang Liu, Qingning Li, Feng Yan
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Microsecond-response perovskite light-emitting diodes for active-matrix displays Nat. Electron. (IF 33.7) Pub Date : 2024-06-18 Yun Gao, Hongjin Li, Xingliang Dai, Xingjian Ying, Zhe Liu, JiaJun Qin, Jie Guo, Zhongkang Han, Yujing Zhang, Meiyi Zhu, Xiaohui Wu, Qiuting Cai, Yixing Yang, Linrun Feng, Xiaoyu Zhang, Jingyun Huang, Haiping He, Feng Gao, Zhizhen Ye
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Building bioelectronic fibres with a light touch Nat. Electron. (IF 33.7) Pub Date : 2024-06-17 Xiao Wan, Trinny Tat, Yihao Zhou, Xun Zhao, Jun Chen
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Training deep Boltzmann networks with sparse Ising machines Nat. Electron. (IF 33.7) Pub Date : 2024-06-17 Shaila Niazi, Shuvro Chowdhury, Navid Anjum Aadit, Masoud Mohseni, Yao Qin, Kerem Y. Camsari
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An electronic pill for non-invasive gastric monitoring Nat. Electron. (IF 33.7) Pub Date : 2024-06-13 Pengju Li, Jiuyun Shi, Bozhi Tian
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Stable and reliable bio-interfacing electrodes based on conductive hydrogels Nat. Electron. (IF 33.7) Pub Date : 2024-06-12 Dekui Song, Nan Liu
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Neuromorphic dendritic network computation with silent synapses for visual motion perception Nat. Electron. (IF 33.7) Pub Date : 2024-06-06 Eunhye Baek, Sen Song, Chang-Ki Baek, Zhao Rong, Luping Shi, Carlo Vittorio Cannistraci
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A complementary step to halide perovskite electronics Nat. Electron. (IF 33.7) Pub Date : 2024-06-03 Yen-Hung Lin
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Stretching visions of display technology Nat. Electron. (IF 33.7) Pub Date : 2024-05-30
Next-generation optoelectronic devices — including quantum dot and perovskite light-emitting diodes — could be used to build stretchable and multifunctional displays.
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Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors Nat. Electron. (IF 33.7) Pub Date : 2024-05-27 Jianfeng Jiang, Lin Xu, Luojun Du, Lu Li, Guangyu Zhang, Chenguang Qiu, Lian-Mao Peng
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A complementary oxide semiconductor Nat. Electron. (IF 33.7) Pub Date : 2024-05-24 Stuart Thomas
The researchers — who are based at the University of Electronic Science and Technology of China, Pohang University of Science and Technology, Northwestern University in the United States, the Korea Research Institute of Standards and Science, and the University of Science and Technology in Daejeon — developed a mixed phase of high-mobility tellurium within an amorphous tellurium sub-oxide matrix. Selenium
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Wafer-scale probing of spin qubits Nat. Electron. (IF 33.7) Pub Date : 2024-05-24 Katharina Zeissler
The researchers — who are based at Intel Corporation — created a 300-mm wafer probing process that works at 1.6 K and performs automated and programmable measurements. A wafer stage control and a machine vision algorithm were used to align probe pins to measure individual devices on the wafer. The device metrics collected across the wafer include gate-line resistance, ohmic contact resistance, carrier
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Imperceptible augmentation of living systems with organic bioelectronic fibres Nat. Electron. (IF 33.7) Pub Date : 2024-05-24 Wenyu Wang, Yifei Pan, Yuan Shui, Tawfique Hasan, Iek Man Lei, Stanley Gong Sheng Ka, Thierry Savin, Santiago Velasco-Bosom, Yang Cao, Susannah B. P. McLaren, Yuze Cao, Fengzhu Xiong, George G. Malliaras, Yan Yan Shery Huang