In this article, the simultaneous perturbation stochastic approximation (SPSA) algorithm is proposed to optimize the threshold of the canonical piecewise linear (CPL) function-based models for radio frequency (RF) power transistors. Compared with the existing standard CPL-function-based model, the proposed optimization technique can greatly improve model performance. Two different CPL-based models, the CPL Y/quadratic Y (QY) model and the canonical section-wise piecewise linear (CSWPL) model, are used to verify the proposed technique. Experimental test of a 10-W GaN device from Cree is presented, showing the effectiveness of the proposed technique.

中文翻译：

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RF 功率晶体管 CPL 函数模型的随机优化


在本文中，提出了同时扰动随机逼近（SPSA）算法来优化射频（RF）功率晶体管基于规范分段线性（CPL）函数的模型的阈值。与现有标准的基于CPL函数的模型相比，所提出的优化技术可以极大地提高模型性能。两种不同的基于 CPL 的模型，即 CPL Y/二次 Y (QY) 模型和规范分段分段线性 (CSWPL) 模型，用于验证所提出的技术。对 Cree 的 10W GaN 器件进行了实验测试，显示了所提出技术的有效性。