This letter presents the design of a 200–250-GHz compact vector modulator (VM) phase shifter in a 0.13- μm\mu \text{m} SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. A compact, low-loss, and wideband differential quadrature coupler is used to generate differential I/Q signals. The design details of the millimeter-wave wideband differential coupler is presented and compared with other I/Q generators by the 3-D electromagnetic (EM)-simulated results. The VM core is realized by two variable gain amplifiers based on Gilbert cell architecture. The measured phase shifter shows a gain of −10.3 dB for the maximum gain setting at 230 GHz. The phase shifter shows a −17 dB of gain for full 360° phase tuning range and a 10 dB of gain control. The maximum rms gain error and the phase error are 1.25 dB and 10°, respectively, from 200 to 250 GHz. The chip consumes a dc power of 55 mW and occupies a core area of 0.09 mm2.

中文翻译：

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采用紧凑型宽带差分正交耦合器的 200～250 GHz 移相器


这封信介绍了采用 0.13-μm\mu \text{m} SiGe 双极互补金属氧化物半导体 (BiCMOS) 技术的 200–250 GHz 紧凑型矢量调制器 (VM) 移相器的设计。紧凑、低损耗、宽带差分正交耦合器用于生成差分 I/Q 信号。介绍了毫米波宽带差分耦合器的设计细节，并通过 3D 电磁 (EM) 仿真结果与其他 I/Q 发生器进行了比较。 VM核心由两个基于Gilbert单元架构的可变增益放大器实现。测量的移相器在 230 GHz 的最大增益设置下显示增益为 -10.3 dB。该移相器在整个 360° 相位调谐范围内具有 −17 dB 的增益和 10 dB 的增益控制。在 200 至 250 GHz 范围内，最大均方根增益误差和相位误差分别为 1.25 dB 和 10°。该芯片的直流功率为55 mW，核心面积为0.09 mm2。