This letter presents a highly linear 18–42 GHz single-pole double-throw (SPDT) switch based on the traveling-wave concept for 5G applications. An RF switch for 5G applications requires low insertion loss, high isolation, and high linearity in both Tx/Rx modes. To achieve wideband performance and high linearity, the traveling-wave concept and a 150-nm GaN high electron mobility transistor (HEMT) process were used. The equivalent circuit of the SPDT switch was analyzed using the $S$ -parameter to suppress the loss and improve the isolation. The proposed SPDT switch operates with less than 2.0-dB of insertion loss and higher than 32.1-dB of isolation in a frequency range of 18–42 GHz, in both Tx/Rx modes. The measured input 1-dB compression point (IP_1dB) is 47.5–49.5 dBm at 26–30 GHz. The chip size of the proposed SPDT, including pads, is 3.7 $\times $ 0.51 mm².

中文翻译：

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基于 150 nm GaN pHEMT 工艺中行波概念的高线性 K/Ka 波段 SPDT 开关


这封信介绍了一款基于 5G 应用行波概念的高度线性 18–42 GHz 单刀双掷 (SPDT) 开关。用于 5G 应用的射频开关需要在 Tx/Rx 模式下具有低插入损耗、高隔离度和高线性度。为了实现宽带性能和高线性度，采用了行波概念和 150 nm GaN 高电子迁移率晶体管 (HEMT) 工艺。使用$S$参数对SPDT开关的等效电路进行了分析，以抑制损耗并提高隔离度。所提出的 SPDT 开关在 18-42 GHz 频率范围内（在 Tx/Rx 模式下）工作时插入损耗低于 2.0 dB，隔离度高于 32.1 dB。在 26–30 GHz 时测得的输入 1 dB 压缩点 (IP _1dB ) 为 47.5–49.5 dBm。所建议的 SPDT 芯片尺寸（包括焊盘）为 3.7 × 0.51 mm ² 。