Wearable sensors capable of simultaneous monitoring of multiple physiological markers have the potential to dramatically reduce healthcare cost through early detection of diseases and accelerating rehabilitation processes. These skin-like sensors can deliver significant benefits thanks to their ability to continuously track various physiological indicators over extended periods. However, due to the

The development of neuromorphic systems necessitates the use of memcapacitors that can adapt to optoelectronic modulation. Two-dimensional (2D) materials with atomically thin features and their derived heterostructures are able to allow for controlling local transfer of charge carrier but reports on 2D materials-enabled capacitive-type photoelectric synapses have not been experimentally exploited yet

Terahertz (THz) time-domain spectroscopy (TDS) is a sensitive approach to material characterization. It critically relies on a sufficiently large bandwidth, which is not straightforwardly available in typical THz-TDS systems that are often limited to below 3 THz. Here, we introduce a hybrid THz-source concept based on a spintronic THz emitter (STE) deposited onto a thin, free-standing GaSe nonlinear

Mg2+ ion based self-charging prototype polymeric photo-power cell has been developed in a very simple and inexpensive way. Eosin Y/MgCl2/PVA mixed aqueous solution and poly(lactic acid) /polyvinylidene fluoride (3:1) composite film are the main assembling components of the device responsible for photo-electrons generation and storage. According to the study of the photovoltaic performance of the cell

Higher photoluminescence yield from the boundaries as compared to the interiors in monolayer (1L) islands of transition metal dichalcogenides grown by chemical vapor deposition (CVD) has been frequently documented in the literature. However, the detailed understanding of this phenomenon is still lacking. Here, we investigate the effect observed in CVD grown 1L-MoS2 islands on c-sapphire substrates

Copper(I) iodide, CuI, is the leading p-type nontoxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. Defects play a crucial role in determining the carrier concentration, scattering process, and, therefore, the thermoelectric performance of a material. As a result of defect engineering, the power factor of thin film CuI was increased from 332±32

We have studied the operation of the ScAlN/GaN high-electron mobility transistor (HEMT) at high temperatures up to 700 K (423 °C). A maximum drain current density of ∼2 A/mm and an on-resistance of ∼1.5 Ω·mm was measured at room temperature (RT). The epi-structure exhibited a very high two-dimensional electron gas (2DEG) density of 6 × 1013 cm−2 at RT using Hall measurement. The Sc0.15Al0.85N barrier

Smart actuators convert environmental changes into mechanical energy. However, the actuation performance and robustness of smart actuators are limited by the weak interlaminar force and poor adhesion between layers. Herein, we report moisture-responsive actuators integrated with slippery liquid-infused porous surfaces (SLIPSs). The difference in adsorption capacity of water molecules further increases

Using purely electrical methods to manipulate magnetic property poses a significant obstacle in the development of advanced information technology. Multiferroic materials, distinguished by their magnetoelectric (ME) effect, offer a promising way to overcome this challenge by enabling the electric control of magnetic ordering or magnetization. Here, we have synthesized Cu3Mo2O9 single crystals and investigated

In this paper, a high-frequency lamb wave resonator (LWR) with near zero temperature coefficient of frequency (TCF) is designed, fabricated, and measured. The reported resonator is of a bi-layer structure consisting of lithium niobate (LiNbO3 or LN) and silicon dioxide (SiO2), and lithographically patterned aluminum (Al) inter-digitated electrode fingers on top of the bi-layer structure. By adjusting

Quantum and classical telecommunications require efficient sources of light. Semiconductor sources, owing to the high refractive index of the medium, often exploit photonic cavities to enhance the external emission of photons into a well-defined optical mode. Optical Tamm States (OTSs) in which light is confined between a distributed Bragg reflector and a thin metal layer have attracted interest as

Strongly coupled exciton-polaritons can be observed in a wide variety of systems and exhibit remarkable properties due to their small mass, compared to that of electrons, and their bosonic nature. This allows to study quantum condensates and can be exploited for photonic integrated circuits. For the latter one, the small propagation length of the polaritons in microcavities often comprises a limiting

Differential absorption Lidar (DIAL) in the ultraviolet (UV) region is an effective approach for monitoring tropospheric ozone. 4H-SiC single-photon detectors (SPDs) are emergent devices for UV single-photon detection. Here, we demonstrate a 4H-SiC SPD-based ozone DIAL. We design and fabricate the 4H-SiC single-photon avalanche diode with a beveled mesa structure and optimized layer thickness. An active

The digital–analog hybrid resistive random access memory can not only be used in computing in memory integrated circuits but also adapt to various requirements, such as achieving lower integration complexity. In this work, resistive memory devices with Ta/SiNx/TiN/Pt structures were fabricated, which exhibit a gradual analog or abrupt digital resistive state (DRS) characteristic depending on the different

Owing to their unique topologically protected gapless boundary states, topological insulators (TIs) are attracting substantial interest in spintronics and quantum computing. Here, we discuss the structural, electronic, and topological properties of bulk alkaline earth di-pnictides AX2 (where A= Ca, Sr, or Ba and X= As, Sb, or Bi) using first-principles calculations under the hybrid functional approach

Exciton engineering in two-dimensional (2D) hybrid metal halide perovskites (HMHPs) is crucial for optimizing photoluminescent (PL) and photocurrent (PC) properties, yet it remains a great challenge. In this work, high pressure is applied to accurately control the conversion equilibrium among free carriers (FCs), free excitons (FEs), and trapped excitons in 2D HMHPs of 10% Pb2+-doped BDACdBr4 (BDA

Measurement of the real strength value of near-field electric fields is of great importance for understanding light–matter interactions in nanophotonics, which is a big challenge in the field. We developed in this study a theory and approaches for directly measuring the real strength of near-field electric fields by scattering type scanning near-field optical microscope (s-SNOM). The validity of the

As one of the most promising candidates for next-generation nonvolatile memory, phase change memory is still facing the problem of high power consumption required to reset the device. The melt-quench process during amorphization leads to thermal crosstalk between devices as well. In this work, a paired pulses (P.P.) RESET operation scheme has been demonstrated to reduce the maximum temperature during

Memristive devices based on layered materials have the potential to enable low power electronics with ultra-fast operations toward the development of next generation memory and computing technologies. Memristor performance and switching behavior crucially depend on the switching matrix and on the type of electrodes used. In this work, we investigate the effect of different electrodes in 1D MoO2–MoS2

To satisfy the strict demands of 5G radio frequency communication, we propose high-quality, flexible temperature-compensated single-crystalline AlN film bulk acoustic wave resonators (TC-SABARs) based on a 6-inch sapphire substrate. An AlGaN sacrificial layer and a 600-nm-thick single-crystalline AlN epitaxial layer are deposited on a sapphire substrate by metal organic chemical vapor deposition (MOCVD)

Predicting chaotic systems is crucial for understanding complex behaviors, yet challenging due to their sensitivity to initial conditions and inherent unpredictability. Probabilistic reservoir computing (RC) is well suited for long-term chaotic predictions by handling complex dynamic systems. Spin–orbit torque (SOT) devices in spintronics, with their nonlinear and probabilistic operations, can enhance

Artificial nociceptors demonstrate significant potential in emerging fields such as intelligent prosthetics, humanoid robotics, and electronic skin, capable of transducing external noxious stimuli to the central nervous system. Unlike common sensory neurons, nociceptors exhibit unique characteristics, including “no adaptation,” “relaxation,” “threshold firing,” and “sensitization of allodynia/hyperalgesia

Rutile-type GeO2 (r-GeO2) with an ultrawide bandgap of ∼4.7 eV has emerged as a promising material for next-generation power-electronic and optoelectronic devices. We performed transmission electron microscopy (TEM) observation to analyze the structural properties of r-GeO2 film on r-TiO2 (001) substrate at an atomic level. The r-GeO2 film exhibits a threading dislocation density of 3.6 × 109 cm−2

Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy, and astrophysics. Here, we present our efforts to

Understanding the fundamental link between structure and functionalization is crucial for designing and optimizing functional materials, since different structural configurations could trigger materials to demonstrate diverse physical and chemical properties. However, the correlation between crystal structure and thermal conductivity (κ) remains unclear. In this study, taking two-dimensional (2D) carbon

In this work, a pulse-mode N2 plasma surface treatment process was proposed as a means of reducing plasma damage and improving the GaN/GaOx ratio on the surface before SiNx deposition, which further contributes to an enhanced density of 2DEG and a reduced sheet resistance. With the pulsed N2 plasma surface treatment combined with subsequent SiNx passivation, the fabricated GaN HEMTs exhibit negligible

The rapid progress of high-performance microelectronic devices underscores the urgent necessity to develop materials possessing superior thermal conductivity for effectively dissipating heat in cutting-edge electronics. Boron nitride nanosheets (BNNSs) have garnered significant attention due to their exceptional thermal conductivity, combined with electrical insulation and low thermal expansion coefficient

Piezoelectric microresonators have revolutionized modern wireless communication. While billions of these devices are in widespread use across a range of frequencies, materials, and device geometries, every piezoelectric microresonator in current use shares one common characteristic: they all manipulate (quasi) plane waves. While the ideas around waveguiding and strong confinement of acoustic fields

In this study, we report on the molecular beam epitaxy and characterization of nitrogen-polar (N-polar) GaN quantum dots (QDs) grown on SiC substrates. By varying the growth conditions, the emission wavelengths of GaN QDs can be controllably tuned across a large part of the ultraviolet-A, B, and C bands. For N-polar QDs emitting at 243 nm, we measured an internal quantum efficiency (IQE) of 86.4% at

Intertwined electrical wire explosion (EWE) is considered as a potential method for large-scale synthesis of high-entropy alloy nanoparticles, while the helical structure, close contact, and different electrothermal properties of wires add to the difficulties of controlling the Joule energy distribution among the wires. In this paper, two very dissimilar materials, copper and tungsten, are chosen as

The rapid growth of wearable electronics, health monitoring, and the Internet of Things has created a tremendous demand for flexible semiconductors and gadgets. Thermoelectric (TE) semiconductors that enable direct conversion between heat and electricity have been utilized as power generators, but their intrinsic brittleness inhibits the application for powering flexible/wearable electronics. The plastic

Electrical manipulation and detection of antiferromagnetic states have opened a new era in the field of spintronics. Here, we propose a noncollinear antiferromagnetic tunnel junction (AFMTJ) consisting of noncollinear antiferromagnetic Mn3Sn as electrodes and a bilayer boron nitride as the insulating layer. By employing the first-principles method and the nonequilibrium Green's function, we predict

We present a method for the additive fabrication of planar magnetic nanoarrays with minimal surface roughness. Synthesis is accomplished by combining electron-beam lithography, used to generate nanometric patterned masks, with ion implantation in thin films. By implanting 56Fe+ ions, we are able to introduce magnetic functionality in a controlled manner into continuous Pd thin films, achieving 3D spatial

Recently, the rapid development of flexible electronic materials and devices has profoundly influenced various aspects of social development. Flexible magnetoelectric systems (FMESs), leveraging magnetoelectric coupling, hold vast potential applications in the fields of flexible sensing, memory storage, biomedicine, energy harvesting, and soft robotics. Consequently, they have emerged as a significant

Atmospheric pressure nonequilibrium plasma holds significant potential in biomedical applications due to its ability to generate reactive species at low temperatures. However, accurately quantifying and controlling plasma dosage remains challenging. Although equivalent total oxidation potential (ETOP) has been proposed for defining dosage, previous methods required measurement of various reactive oxygen

Mixers play a crucial role in superconducting quantum computing, primarily by facilitating frequency conversion of signals to enable precise control and readout of quantum states. However, imperfections, particularly local oscillator leakage and unwanted sideband signal, can significantly compromise control fidelity. To mitigate these defects, regular and precise mixer calibrations are indispensable

A 600-V p-GaN gate double channel HEMT (DC-HEMT) is presented with a systematic investigation of the gate characteristics, including the leakage current, breakdown, and reliability under forward bias stress. It is found that the gate leakage of the DC-HEMT is substantially lower than that of the p-GaN single channel HEMT (SC-HEMT) owing to suppressed electron spillover that stems from hole storage

For the past few decades, structured light has been gaining popularity across various research fields. Its fascinating properties have been exploited for both previously unforeseen and established applications from new perspectives. Crucial to this is the several techniques that have been proposed for both their generation and characterization. On the one hand, the former has been boosted by the invention

In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (∼1019 cm−3) or low (∼1017 cm−3) N doping

Understanding the intrinsic degradation processes of organic light-emitting diodes is necessary to improve their lifetimes. This intrinsic degradation is typically caused by carrier injection at the interface between the hole transport layer (HTL) and the emissive layer (EML). However, revealing the charge behavior in this local region with a high spatial resolution remains challenging. Thus, this

All-inorganic perovskites have attracted increasing attention because of their strong environmental stability and excellent photoelectric properties. However, the limited spectral response range of perovskite photodetectors restricts them in practical applications. In this work, an ultraviolet–visible photodetector with a wide spectral response and a high responsivity was prepared by constructing a

Beta-phase gallium oxide, β-Ga2O3, in transistors and diodes has been reported due to its distinctive electrical characteristics, such as wide bandgap, low leakage current, and high breakdown electric field. However, besides such conventional basic devices, more advanced device applications using β-Ga2O3 are always necessary. Here, we report on the dynamic behavior of Pt/β-Ga2O3-based Schottky diode

In this work, we report on the beta-gallium oxide (β-Ga2O3) monolithic bidirectional switch. The as-fabricated switch works on enhancement mode operation with a threshold voltage of ∼4 V. Maximum drain current density of 1.93 mA/mm is obtained with a drain voltage of 5 V. The bidirectional switch in a bidirectional mode has an ON/OFF current ratio of ∼107 with ON-resistance of 1.11 and 1.09 kΩ · mm

Hot carrier solar cell is proposed where charge carriers are cooled adiabatically in the charge transport layers adjoining the absorber. The device resembles an ideal thermoelectric converter where thermopower and therefore also carrier entropy are maintained constant during cooling from the temperature attained in the absorber to the temperature at contacts.

To realize optical image encryption for long-distance transmission while considering its security performance, an optical image encryption scheme is proposed in this paper. In the scheme, the pixel information of the plaintext image is first encoded by orbital angular momentum (OAM) holograms; then, the information-coded OAM beam is transmitted through a 1 km multimode fiber to generate speckles as

Type II Si clathrate is a Si-based, crystalline alternative to diamond silicon with interesting optoelectronic properties. Here, a pulsed electron paramagnetic resonance study of the spin dynamics of sodium-doped, type II NaxSi136 silicon clathrate films is reported. Focusing on the hyperfine lines of isolated Na atoms, the temperature dependence of the electron spin dynamics is examined from 6 to

In this study, we demonstrate the effects of electron velocity modulation (Δve/ΔVgs) on the microwave power performance for AlGaN/GaN HFETs. In order to conduct the experiments, AlGaN/GaN HFETs with gate lengths ranging from 500 to 80 nm were fabricated. Electron transport was investigated by coupling a drift-diffusion solver with the Monte Carlo method. As gate lengths (Lg) varied from 500 to 200

Deep learning (DL) has become an indispensable tool in hyperspectral data analysis, automatically extracting valuable features from complex, high-dimensional datasets. Super-resolution reconstruction, an essential aspect of hyperspectral data, involves enhancing spatial resolution, particularly relevant to low-resolution hyperspectral data. Yet, the pursuit of super-resolution in hyperspectral analysis

In this work, the mechanistic insights behind low-frequency noise (LFN) of the advanced ultrathin body and buried oxide fully depleted silicon-on-insulator based metal–oxide–semiconductor field effect transistor (MOSFET) are unveiled. The gate voltage-induced noise power spectral density (SVG) is inversely proportional to frequency f (i.e., SVG∝1/fγ, γ∼ 1 is the frequency exponent) for nMOSFET and

The unique spin-optical properties of NV defects in SiC, coupled with silicon carbide's advanced technology compared to diamond, make them a promising candidate for quantum technology applications. In this study, using photoinduced pulse ESR at 94 GHz (3.4 T), we reveal the room temperature spin coherence of NV defects in 6H-28SiC, purified to reduce 29Si concentration to ≈1%, four times below its

The rare-earth Eu-based compounds with a unique half-filled 4f orbital have attracted an amount of research interest recently. Here, we synthesized EuTe(001) single-crystal thin films on SrTiO3(001) substrate via molecular beam epitaxy (MBE). The scanning tunneling microscopy and x-ray diffraction results indicate that the grown EuTe thin films orientated as EuTe[100]//SrTiO3[110] in plane. In the

Volatile organic compounds (VOCs) play a crucial role in affecting health, environmental integrity, and industrial operations, from air quality to medical diagnostics. The need for highly sensitive and selective detection of these compounds has spurred innovation in sensor technologies. This editorial introduces a special collection of articles in Applied Physics Reviews, exploring the latest advancements

Charge-induced surface discharge poses a critical risk to the operational reliability of high-voltage direct current gas-insulated equipment and pulsed power system. In this study, we investigate the effects of charge-induced electric field distortion and charge involvement during surface discharge by separately depositing charge spots on two dielectric layers. The results show that deposited positive