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A Cryo-CMOS Low-Noise Amplifier With 2.3-to-8.5-K Noise Temperature at 20 K for Highly Integrated Radio-Astronomy Receivers
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2022-06-08 , DOI: 10.1109/lmwc.2022.3178579
A. Sheldon 1 , L. Belostotski 1
Affiliation  

This letter presents a 0.9–1.8-GHz cryo-CMOS low-noise amplifier (LNA) built-in standard 65-nm CMOS for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and demonstrate that the LNA nears its minimum noise temperature at the desired frequency range. The proposed LNA operates at 20 K, consumes 115 mW of power, and provides a 37.2 ± 2.4 dB gain ( $S_{21}$ ) with a noise temperature (figure) of 2.3 to 8.5 K (0.03 to 0.13 dB) and $| S_{11}| < -10$ dB.

中文翻译:

用于高度集成射电天文接收机的 Cryo-CMOS 低噪声放大器,在 20 K 时噪声温度为 2.3 至 8.5 K

这封信介绍了用于高度集成射电天文接收机的 0.9–1.8 GHz 低温 CMOS 低噪声放大器 (LNA) 内置标准 65 纳米 CMOS。测得的低温噪声参数证实了频带中的噪声匹配,并证明 LNA 在所需频率范围内接近其最低噪声温度。建议的 LNA 在 20 K 下工作,消耗 115 mW 功率,并提供 37.2 ± 2.4 dB 增益( $S_{21}$ ),噪声温度(数字)为 2.3 至 8.5 K(0.03 至 0.13 dB)和 $| S_{11}| < -10 美元D b。
更新日期:2022-06-08
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