Herein, based on a rounded rectangle p-i-n diode with the minimum radius allowed by the process and a 0.8- μm\boldsymbol {\mu }\mathbf {m} thick I-layer, a high-power wideband monolithic limiter was realized by using GaAs p-i-n process. At 16 GHz, the maximum handling power of the monolithic limiter is up to 400 W (56 dBm), while the output power is less than 45 mW (16.5 dBm). Meantime, the insertion loss of the limiter is less than 0.55 dB and the return loss is better than −15 dB in the frequency range of 10–18 GHz, which has little effect on the signal of the receiver. It demonstrates that the limiter has a significant potential in high-frequency and high-power phased-array radars and communication systems.

中文翻译：

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基于GaAs引脚技术的高功率10'18 GHz单片限幅器


本文基于工艺允许的最小半径的圆角矩形pin二极管和0.8μm\boldsymbol {\mu }\mathbf {m}厚的I层，采用GaAs实现了高功率宽带单片限幅器引脚过程。在 16 GHz 时，单片限幅器的最大处理功率高达 400 W (56 dBm)，而输出功率小于 45 mW (16.5 dBm)。同时，在10~18 GHz频率范围内，限幅器的插入损耗小于0.55 dB，回波损耗优于-15 dB，对接收机信号影响很小。这表明该限幅器在高频大功率相控阵雷达和通信系统中具有巨大的潜力。