This work presents a dual-band complementary metal–oxide–semiconductor (CMOS) up-conversion mixer that operates in the frequency range of 24.25–40 GHz. To realize highly linear characteristics at both the 28- and 39-GHz bands, the proposed design uses the single-stacked transistor configuration as well as band-switchable inductor and transformer loads. The up-conversion mixer comprises an intermediate frequency (IF) transconductance, a switching, and a radio frequency (RF) stage. Mixer switches are driven by three-stage local oscillator (LO) buffers. The design is fabricated in a 40-nm CMOS process and shows conversion gains exceeding 3.7 and 0.8 dB, output 1-dB compression points (OP1dBs) exceeding −1 and −0.2 dBm, and output 3rd-order intercept points (OIP3s) exceeding 9.2 and 3.8 dBm for 28 and 39 GHz bands, respectively. The implemented mixer consumes a bias current of 22.1 mA with a 1.1-V supply. The active area excluding bonding pads is 0.59 mm 2 .

中文翻译：

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适用于毫米波 5G NR FR2 蜂窝应用的 24'40 GHz 双频段高线性 CMOS 上变频混频器


这项工作提出了一种双频段互补金属氧化物半导体 (CMOS) 上变频混频器，工作频率范围为 24.25–40 GHz。为了在 28 GHz 和 39 GHz 频段实现高度线性特性，建议的设计使用单堆叠晶体管配置以及频段可切换电感器和变压器负载。上变频混频器包括中频(IF)跨导、开关和射频(RF)级。混频器开关由三级本地振荡器 (LO) 缓冲器驱动。该设计采用 40 nm CMOS 工艺制造，转换增益超过 3.7 和 0.8 dB，输出 1-dB 压缩点 (OP1dBs) 超过 -1 和 -0.2 dBm，输出三阶截取点 (OIP3s) 超过 9.2 28 和 39 GHz 频段分别为 3.8 dBm 和 3.8 dBm。所实现的混频器在 1.1V 电源下消耗 22.1mA 的偏置电流。不包括焊盘的有源面积为0.59 mm 2 。