This paper presents a modified post-distortion (PD) linearization technique for cascode common-gate low noise amplifiers (CG-LNAs) working at high frequencies up to millimeter-wave band. This technique utilizes an auxiliary transistor together with an inter-stage inductor to suppress the third order distortion without degrading gain. The input third order intercept point (IIP3) of the linearized CG-LNA is improved by a factor of up to 12 dB. For demonstration, an mm-wave differential CG-LNA was fabricated based on a 65-nm CMOS process. It achieves 2.4–10.6 dBm IIP3, 9.6–12 dB gain, 5.0–5.45 dB NF over 26–31 GHz and consumes 14.4 mW from a 1.2 V supply.

中文翻译：

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使用后失真技术的 26–31 GHz 线性化宽带 CMOS LNA

本文介绍了一种改进的后失真 (PD) 线性化技术，用于在高达毫米波段的高频下工作的级联共栅低噪声放大器 (CG-LNA)。该技术利用辅助晶体管和级间电感器来抑制三阶失真而不降低增益。线性化 CG-LNA 的输入三阶截点 (IIP3) 提高了高达 12 dB。为了演示，基于 65-nm CMOS 工艺制造了毫米波差分 CG-LNA。它在 26-31 GHz 范围内实现 2.4-10.6 dBm IIP3、9.6-12 dB 增益、5.0-5.45 dB NF，并在 1.2 V 电源下消耗 14.4 mW。