This letter presents a 220–261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12–15, 110–135, and 216–270 GHz), two frequency triplers (36–45 and 108–135 GHz), a third-order Chebyshev bandpass filter (36–45 GHz), and a modified Gilbert-cell-based frequency doubler (216–270 GHz). The peak output power is about 8 dBm at 240 GHz with a 3-dB bandwidth of 41 GHz for an input power of −7 dBm. The unwanted harmonics are suppressed more than 25 dBc over the frequency range of interest. It consumes a dc current of 114.7 mA from a supply voltage of 3.3 V in the quiescent operation and drains a current of 130 mA for an input power of −7 dBm, which results in a drain efficiency of 1.47%. The total circuit occupies an area of 0.58 mm 2 (1.35 mm ×0.43\times0.43 mm).

中文翻译：

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采用 130 nm SiGe 封装、具有 8 dBm 峰值输出功率的 220-261 GHz 倍频器链 (× 18)


这封信介绍了采用 130 nm SiGe BiCMOS 技术的 220–261 GHz 18 倍频链。它由三个放大器（12-15、110-135 和 216-270 GHz）、两个频率三倍器（36-45 和 108-135 GHz）、一个三阶切比雪夫带通滤波器（36-45 GHz）和改进的基于吉尔伯特单元的倍频器（216-270 GHz）。 240 GHz 时的峰值输出功率约为 8 dBm，输入功率为 −7 dBm，3 dB 带宽为 41 GHz。在感兴趣的频率范围内，不需要的谐波被抑制超过 25 dBc。在静态操作中，它从 3.3V 电源电压消耗 114.7mA 的直流电流，在 −7dBm 的输入功率下消耗 130mA 的电流，从而产生 1.47% 的漏极效率。总电路占用面积为0.58mm 2 (1.35mm×0.43×0.43mm)。