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A 10-W High-Power Amplifier Using Input Nonlinearity for K-Band Satcom Applications
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2022-03-17 , DOI: 10.1109/lmwc.2022.3156912
Chupeng Yi 1 , Yang Lu 1 , Ziyue Zhao 1 , Yuchen Wang 1 , Jiuding Zhou 1 , Bochao Zhao 2 , Peixian Li 1 , Xiaohua Ma 1 , Yue Hao 1
Affiliation  

This letter presents a K{K} -band 0.1- μm\mu \text{m} GaN on Si 10-W high-power amplifier (HPA) for the downlink of the satellite communication system. The proposed HPA uses the driver-stage transistor to generate a half-sinusoidal waveform that is delivered to the power-stage transistor. The half-sinusoidal waveform combines the input nonlinearity of the power-stage transistor to simultaneously improve the efficiency and expand the design space of the input harmonic impedance. A simple and compact interstage matching network (ISMN) design is used to match the harmonic impedance of both driver and power-stage transistors to create the corresponding waveforms. The proposed HPA has a small size of 3.5 mm ×3.2\times3.2 mm and operates in the frequency range of 17–20.5 GHz achieving a 22-dB gain, an average output power ( Pout{P}_{\mathbf {out}} ) of 42 dBm, and 41% power-added efficiency (PAE) in the pulsed measurement. Moreover, the proposed HPA maintains a PAE of more than 33% and output power of 40.4 dBm in continuous wave (CW) measurement.

中文翻译:


适用于 K 波段卫星通信应用的使用输入非线性的 10W 高功率放大器



这封信介绍了用于卫星通信系统下行链路的 K{K} 波段 0.1- μm\mu \text{m} GaN on Si 10-W 高功率放大器 (HPA)。所提出的 HPA 使用驱动级晶体管生成半正弦波形,并将其传送到功率级晶体管。半正弦波形结合了功率级晶体管的输入非线性,在提高效率的同时扩大了输入谐波阻抗的设计空间。采用简单紧凑的级间匹配网络 (ISMN) 设计来匹配驱动器和功率级晶体管的谐波阻抗,以创建相应的波形。所提出的 HPA 尺寸较小,为 3.5 mm ×3.2\times3.2 mm,工作频率范围为 17–20.5 GHz,实现 22 dB 增益,平均输出功率 ( Pout{P}_{\mathbf {out }} )为 42 dBm,脉冲测量中的功率附加效率 (PAE) 为 41%。此外,所提出的 HPA 在连续波 (CW) 测量中保持了超过 33% 的 PAE 和 40.4 dBm 的输出功率。
更新日期:2022-03-17
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