The photon-stimulated emission of bulk electrons has been extensively studied for various types of materials, while the photodetachment of surplus surface electrons has not been fully explored. The photodetachment barrier energy is commonly defined by the surface electron affinity of material, which is typically less than the work function and more pronounced for non-conducting substrates and in environments

We present α-Ga2O3:Zr based metal–semiconductor field-effect transistors (MESFETs) with PtOx/Pt gate contacts. Pulsed laser deposition is used to grow the α-Ga2O3:Zr thin films in a two-step process on m-plane α-Al2O3. A nominally undoped α-Ga2O3 layer is grown at high growth temperature as growth template. Subsequently, a α-Ga2O3:Zr layer is grown at a lower growth temperature. We compare the performance

A composite p-contact structure is proposed to enhance the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). With the insertion of a 1 nm-thick p-AlGaN layer prior to the contact layer, the operating voltage at 100 mA is significantly reduced by 0.2–0.3 V in 277 nm DUV-LEDs, leading to a maximum wall-plug efficiency of 10.7%. It is experimentally demonstrated

Inorganic CsPbI2Br perovskites solar cells (PSCs) have attracted extensive interest owing to their outstanding optoelectronic properties. Nevertheless, the undesirable perovskite film quality and severe charge recombination dramatically restrict their performance improvement. Herein, we propose an additive strategy to modulate the CsPbI2Br crystallization process and reduce the defect density by adding

Precisely quantifying the adhesion energy of delicate nanobelts on rough substrates remains challenging due to their disparate surface properties and nanoscale dimensions. To overcome these challenges, we propose an optical microscopy-based bridging method to quantify the adhesion energy of ZnS nanobelts on Si substrates in air. Our results revealed that the nanobelt–smooth substrate interfacial system

Piezoelectric quartz resonators are attracting increasing attention in resonant accelerometers due to their excellent quality factor and stable crystal structure, which helps to achieve more robust mechanical sensing. Previously quartz resonators operated in the linear region of an atmospheric pressure environment. To achieve a better signal-to-noise ratio, it is imperative to investigate the effect

Increasing the operable frequency range and improving the small acceleration amplitude harvesting performance of the piezoelectric energy harvesting devices is importance due to the wide frequency spectrum and large amplitude range of environmental vibrations. In this Letter, an improved piezoelectric energy harvester with frequency upconversion is proposed, which is comprised of a composite piezoelectric

Magnetic bimerons, solitonic spin textures with the same topology as skyrmions, have attracted attention for their potential in spintronic applications. In this work, we explore the stabilization conditions and energy characteristics of bimerons in a circular nanodot through micromagnetic simulations and analytical calculations. We examine the dependence of the size, position, and orientation of the

The grain boundary phase (GBP) has a significant influence on the magnetization behavior in nanocrystalline PrNd–Fe–B magnets. The current study demonstrates that reversible/irreversible magnetization behavior and the phenomenon of open recoil loops are related to both the nature of GBPs and the magnetization state by in situ observation. The optimization of GBPs nature (increase the volume fraction

The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionization and parallel conduction. Here, we study phonon scattering in 2D electrons and holes in the 1.6–92.5 K range without the use of extrinsic doping, where both acoustic and longitudinal optic (LO) phonons come into effect. We use

Highly precise and efficient characterization of thermophysical parameters associated with martensitic transformation (MT) in shape memory alloys (SMA) is challenging based on conventional calorimetry methods. Moreover, existing methods for evaluating the elastocaloric effect of SMA typically require a series of tests and calculations. In addition, the present method cannot evaluate the nonreversible

Potassium-ion batteries (PIBs) demonstrate significant potential for future renewable energy storage systems, given the high natural richness and economic benefits of potassium resources. Nevertheless, the primary challenge hindering the development of PIBs is the scarcity of appropriate anode materials capable of delivering high performance. Using first-principles calculations, we theoretically design

Kerr nonlinearity plays a pivotal role in nonlinear photonics. Recent advancement in wafer bonding techniques has led to the creation of a cubic silicon carbide-on-insulator (3C-SiCOI) platform with improved crystalline quality, offering exciting prospects for investigating the Kerr effect in 3C-SiC. In this paper, we demonstrate 3C-SiC's Kerr effects through design, fabrication, and experimental investigation

This article concentrates on the field emission (FE) characteristics under the pulsed transient electric field. Experimental measurements are carried out by applying direct current (DC) voltage, millisecond pulse voltage, and microsecond pulse voltage. Additionally, 304 stainless steel, oxygen-free copper and titanium electrodes are utilized to verify the consistency. Compared with the case under DC

Young's modulus plays a crucial role in determining the suitability of materials for various applications, including two-dimensional (2D) materials like graphene and transition metal dichalcogenides. Traditional indentation methods struggle with ultrathin 2D materials due to substrate effects. To overcome this, we propose using polydimethylsiloxane (PDMS) as a compliant substrate for atomic force microscopy

All-inorganic metal halide perovskites possess significant potentiality in lighting, bioimaging, and optical anti-counterfeiting due to their exceptional and unique properties. However, the exploration of efficient, robustly stable, and long-persistent luminescent blue light-emitting materials poses huge challenges, especially in understanding their electronic structure and photophysical processes

Clock transitions (CTs) in spin systems, which occur at avoided level crossings, enhance quantum coherence lifetimes T2 because the transition becomes immune to the decohering effects of magnetic field fluctuations to first order. We present the first electron-spin resonance characterization of CTs in certain defect-rich silica glasses, noting coherence times up to 16 μs at the CTs. We find CT behavior

Bistable energy harvesters (BEHs) have been extensively explored from the perspective of potential energy. However, few studies have investigated other energy dimensions or proposed optimization routes beyond potential barrier modification. This study presents BEH's total energy analysis framework, incorporating both potential and kinetic energy (Ep and Ek, respectively). Theoretically, these two energy

A silver (Ag) enhanced 3D carbon nanofiber membrane (Ag@CNFM) was synthesized through a combination of electrospinning and heat treatment techniques, with polyacrylonitrile, polyvinylpyrrolidone, and silver nitrate as precursors playing different roles in this process. Additionally, Ag-enhanced 3D carbon fiber membrane composite anodes were obtained by electrodeposition at a current density of 1 mA

Ultrafast lasers, providing the shortest pulses worldwide, have been playing a vital role in the ultrafast imaging technology. The temporal resolution has been increasing rapidly in recent years but finally reaches its limit—the pulse width approaches photoperiods, causing significant broadening of spectral bandwidth. The state-of-the-art high harmonics generation based attosecond lasers, with pulse

The crystal structure, stability, electronic, and optical properties of the Ta2NiSe5 monolayer have been investigated using first-principles calculations in combination with the Bethe–Salpeter equation. The results show that it is feasible to directly exfoliate a Ta2NiSe5 monolayer from the low-temperature monoclinic phase. The monolayer is stable and behaves as a normal narrow-gap semiconductor with

We report resonant cavity infrared detectors with a peak wavelength of 4.54–4.58 μm that combine external quantum efficiency (EQE) exceeding 70% with spectral bandwidth 20–40 nm and ≤2% EQE at all non-resonance wavelengths between 4 and 5 μm. A 300-nm-thick absorber assures that most of the radiation propagating in the cavity produces photocurrent rather than parasitic loss. The cavity is formed by

We report a monolithic bidirectional dual-gate metal–oxide–semiconductor field-effect transistor fabricated on epitaxially grown β-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for

The impacts of gate voltage stress on the on-state characteristics of nitrided SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) were examined. A strong negative voltage stress at 300 °C induced a decrease in the channel mobility of the MOSFETs. This mobility decrease occurred along with an increase in the interface state density. Through MOS Hall effect measurements, we proposed

Bogoliubov quasiparticles play a crucial role in understanding the behavior of a superconductor and in achieving reliable operations of superconducting quantum circuits. Diagnosis of quasiparticle poisoning at the nanoscale provides invaluable benefits in designing superconducting qubits. Here, we use scanning tunneling noise microscopy to locally quantify quasiparticles by measuring the effective

The generation of single photons using solid-state quantum emitters is pivotal for advancing photonic quantum technologies, particularly in quantum communication. As the field continuously advances toward practical use cases and beyond shielded laboratory environments, specific demands are placed on the robustness of quantum light sources during operation. In this context, the robustness of the quantum

Two-dimensional ferrovalley materials, which simultaneously exhibit ferromagnetism and valley polarization, have garnered substantial interest in recent years due to their fascinating physical properties and potential applications. However, the ferrovalley materials currently discovered are predominantly based on d orbitals. In this work, using first-principles calculations, we predict an exceptionally

Understanding the charge dynamics in the quantum-dot light-emitting diodes (QLEDs) is essential to further improve their performance. Here we demonstrate that the holes can be stored for over 30 ms in QLEDs based Cd-based quantum dot (QD) emission layer. This ultralong-term hole storage is examined by inserting an electron-capturing unit (ECU) in the hole-transport layer. Through superimposing a negative

As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred

We demonstrate an actively stabilized cavity-enhanced dual-comb spectroscopy to improve comb transmission through a high-finesse optical cavity. In this dual-comb spectroscopic method, one comb is phase-locked to a 34 cm cavity with a finesse of about 15 700, which is stabilized to the molecular absorption line. With this actively stabilized scheme, all comb lines can be locked to the center of the

The p-GaN/AlGaN/GaN heterostructures with integrated n-channel and p-channel have been extensively applied in p-channel field effect transistor (p-FET) devices and complementary (CMOS) logic circuits. However, the hole mobility of the p-channel is still low, especially in the heterostructures grown by metalorganic chemical vapor deposition (MOCVD). In this work, an impurity engineering was designed

The Wiedemann–Franz (WF) law is a fundamental, empirical law that originally relates the electronic thermal conductivity (Λe) of a metal to its electrical resistivity (ρ) via the Lorenz number L = ρΛe/T, where T is the absolute temperature. Conventionally as ρ is measured or calculated, it has often been used to infer the Λe through the WF law at a wide range of pressure (P)–temperature (T) conditions

The Stone–Wales (SW) defects have a critical impact on the physical properties of the carbon-based materials with pentagonal and hexagonal rings, which also emerge in other pentagon-based materials with the Cairo tessellation. However, scarce attention has been paid to SW defect engineering in two-dimensional (2D) pentagonal materials. In the present letter, we propose four unreported 2D PdSSe monolayers

We demonstrate the advantage of using two-color Kerr rotation spectroscopy to study the long-lived valley polarization in a suspended WSe2 monolayer. Low-temperature optical measurements under electrostatic gating reveal the high degree of freedom in tailoring the properties of the suspended monolayer by controlling optical interference at the monolayer, strain, and the carrier density of the material

The in-plane strain in the ferroelectric HfxZr1−xO2 (HZO) thin films has been considered to be the global factor behind many process parameters affecting the concentration of metastable polar-orthorhombic phase (O-phase Pca21) formed in the transformation pathway from tetragonal to monoclinic phase. However, the strain is generally effective in crystal phase nucleation and transition with the thermal

An in situ and nondestructive technique is developed to image the formation and evolution of dark line defects in the cavity of a high-power diode laser. The technique uses broadband near infrared emission that originates in the laser's core layers and enables defects to be imaged with high spatial resolution through the substrate. In particular, it enables defect imaging through the substrate of shorter

Infrared photodetectors (PDs), particularly the near-infrared (NIR) PDs, are essential for applications in remote sensing, night vision, imaging, and so on. ZrTe3, a semimetallic transition metal trichalcogenide with zero bandgap, strong anisotropy, and enhanced conductivity, is emerging as a promising material for NIR PDs, provided that the noise can be effectively suppressed. The solution lies in

GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the formation of quantum dots in GaN FETs under current collapse. By comparing the Coulomb diamond between standard measurements and those under current collapse, we find

Distinguishing different antiferromagnetic domains by electrical probes is a challenging task, which in itinerant compounds can be achieved, e.g., via the anisotropic magnetoresistance. Here, we demonstrate that in insulators, the anisotropic magnetocapacitance can be exploited for the same purpose. We studied the magnetic field dependence of the dielectric response in BiFeO3, one of the few room-temperature

The super-exchange coupled Mn2+–Mn2+ dimer can be formed by doping high concentrations of Mn2+ ions. However, since the distribution of Mn2+ ions strongly depends on the crystal structure of the host lattice, the tuning of Mn2+ ion related emission properties remains limited. Here, a pressure-treated strategy is reported to induce a new red emission band of Mn2+–Mn2+ dimers in the Mn-based metal halide

We have demonstrated a complementary metal-oxide-semiconductor inverter logic gate by heterogeneous integration of an enhancement-mode n-channel transistor on GaN and a p-channel transistor on diamond. A thermally grown p-type NiOx is used as the dielectric, and Ni/Au is the gate metal for both transistors. NiOx oxide on top of a partially recessed-gate AlGaN/GaN heterostructure depletes the two-dimensional

The carrier dynamics of lead-free cesium tin halide perovskites are crucial for evaluating their potential as substitutes for lead-based perovskites. Herein, we investigate the ultrafast transport of hot carriers in CsSnBr3 microplates synthesized via chemical vapor deposition. We observe a significantly prolonged hot carrier cooling process lasting ∼50 ps, due to the hot-phonon bottleneck effect and

The method of combining surface acoustic waves (SAWs) with electrical detection has promoted the study of phonon–spin coupling and spintronics. Aiming at problems of difficult detection of DC voltage and unknown origin of spin current caused by SAW in ferromagnetic/light metal systems, we constructed the Ni/Cu/Ta on LiNbO3 substrate and measured acoustic voltages directly, which are used to analyze

Recently, the noncollinear magnetic structure with varying Co/Zn ratios was reported in the W-type hexaferrites using neutron powder diffraction. It is believed that these noncollinear spin orderings may stimulate magnetoelectric (ME) effect in the W-type hexaferrite. Herein, we present distinct evidence of ME response through systematic investigation on the magnetic and ferroelectric properties in

Our study sets forth a carbon-based two-dimensional (2D) kagome topological insulator without containing any metal atoms that aligns the Fermi level with the Dirac point without the need for doping, overcoming a significant bottleneck issue observed in 2D metal-organic framework-based kagome structures. Our 2D kagome structure, formed by creating patterned nano pores in the graphene sheet, nomenclatured

Freestanding semiconductor membranes hold significant potential for heterogeneous integration technology and flexible electronics. Remote epitaxy, which leverages electrostatic interactions between epilayers and substrates through two-dimensional (2D) materials such as graphene, offers a promising solution for fabricating freestanding single-crystal membranes. Although the thinness, uniformity, and

Uncovering the material dissipation mechanisms of two-dimensional materials is essential for their implementation in advanced devices. While graphene resonators are highly attractive due to their high operational frequency and excellent durability, they dissipate a considerable amount of energy due to significant material dissipation associated with atomic friction manifested by the relative slipping

As a traditional carbon material, natural graphite has excellent electrical properties and huge reserves, making it a potential candidate for thermoelectric materials. By doping Fe, p-type graphite-based thermoelectric materials were prepared. By conjugating with polyethylenimine, the stable n-type graphite-based thermoelectric material was prepared. A thermoelectric device composed of four pairs of

The single crystal of morphotropic-phase-boundary (MPB) Pb(Mg1/3Nb2/3)O3−PbTiO3 (PMN-PT) is widely utilized in ultrasonic medical imaging devices due to its excellent piezoelectric properties. In recent years, alternating-current (AC) poling has proven effective in enhancing these properties, though AC poling beyond optimal cycles can lead to deterioration. In this study, to gain deeper insights into

In fiber spinning of photopolymers, surface tension limits the diameter of the fiber that can be produced due to the Rayleigh–Plateau instability. Submerging a pre-fiber jet in a miscible environment liberates the system from capillary effects, thus allowing the jet to be stretched into thin threads without instability. In this work, we systematically investigated a spinning method using miscible liquids

Currently, silicon vacancy (VSi) color centers in SiC are of significant interest due to their potential applications in quantum sensing and quantum communication. Meanwhile, femtosecond lasers, as a non-thermal processing technique, offer considerable advantages in machining hard and brittle materials, such as SiC. Femtosecond laser processing effectively increases the yield of VSi color centers in

Van der Waals epitaxy and transfer of functional layers are crucial technologies for achieving monolithic 3D integration in advanced electronics. Two-dimensional transition metal dichalcogenides, such as 2D-MoS2, exhibit strong growth texturing effects and excellent van der Waals transferability for metal and semiconductor layers deposited on top of them. In this study, we demonstrate strong texturing

Single microcrystals of Cu2GeS3 (CGS) were grown in molten LiI salt. According to x-ray diffraction measurements, all of the samples were made up entirely of CGS crystals. Raman spectra and photoluminescence (PL) at room temperature revealed two different types of crystals. Type A crystals displayed an asymmetric PL band at about 1.57 eV, while type B crystals displayed extra bands at 1.673, 1.587

In this work, we have investigated the emergence of quantum anomalous Hall (QAH) effect in 1T-CrX2 (X = Bi, Sb) monolayers. Using a combination of first-principles and tight-binding methods, we demonstrate that the topological phase is a result of biaxial tensile strain, many-electron effects, and spin–orbit coupling. Both two-dimensional structures are ferromagnetic under strain and the phase transition

To alleviate the increasingly serious energy issues, it is essential to develop highly efficient and stable electrocatalysts for the oxygen evolution reaction (OER) and oxygen reduction reaction (ORR). In this study, we employed density functional theory to investigate a broad spectrum of transition metal (TM = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Mo, Ru, Rh, Ag, W, Ir, and Pt) atoms supported

Plasmon-induced transparency (PIT) metasurfaces have emerged as a promising platform for applications in ultrasensitive detection and slow-light devices. The active control of PIT metasurfaces is particularly crucial for advancing these applications. In this study, we integrate the phase change material Ge2Sb2Te5 (GST) into the structural design of a polarization-independent metasurface, enabling the

This study demonstrated InGaN-based flexible RGB micro-light-emitting diodes (μLEDs) with size ranging from 20 to 100 μm through laser liftoff and UV-tape-assisted transfer process. The fabrication process of flexible RGB μLEDs released the stress of GaN films, which reduced the bending of energy band and screened the quantum-confined Stark effect in InGaN quantum wells based on theoretical simulation

This study investigated the metal–oxide–semiconductor gate characteristics of recessed-gate AlN/GaN metal–oxide–semiconductor-heterojunction-field-effect transistor with N2/NH3 thermal treatment. The gate-channel mobility in recessed-gate structures formed by the inductively coupled plasma-reactive ion etching method is degraded due to plasma-induced damage. The application of thermal treatment to

Frequency-modulated continuous-wave light detection and ranging (LiDAR) is a powerful ranging technique that offers inherent resistance to ambient light and the capability to simultaneously measure both distance and velocity. However, conventional LiDAR systems often face challenges with environmental interference and achieving a balance between demodulation complexity, data-refresh rate, and precision

In magnetic particle imaging (MPI), selection field (SF) gradients are utilized to form a field-free point (FFP) in space, such that only the magnetic nanoparticles (MNPs) in the vicinity of the FFP respond to the applied drive field (DF) and contribute to the received signal. While the relaxation behavior of MNPs adversely affects image quality by reducing signal intensity and causing blurring, it