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Vertical Waveguide-to-Microstrip Self-Diplexing Transition for Dual-Band Applications
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2022-08-01 , DOI: 10.1109/lmwc.2022.3193166
Emilio Arnieri 1 , Francesco Greco 1 , Luigi Boccia 1 , Giandomenico Amendola 1
Affiliation  

This letter presents a novel vertical waveguide-to-microstrip self-diplexing transition for dual-band applications. The transition is realized with standard printed circuit board (PCB) manufacturing processing, making it suitable for mass production and practical applications. A standard waveguide is screwed on the topside of the stack-up. Dual-band self-diplexing operation is achieved by coupling two microstrips (one for each band) to two radiating patches through H-shaped slots. The operating bandwidth has been enhanced by adding two parasitic patches above the radiating ones. Metalized via holes are used to form a cage around the rectangular waveguide and the microstrips to prevent power leakage. A prototype has been fabricated to operate at K/Ka frequency band. The experimental results show a −10 dB matching bandwidth of 20% and 14% for the lower and upper bands, respectively. Within these ranges, the maximum measured insertion loss is about 0.6 and 0.7 dB, respectively.

中文翻译:

用于双频带应用的垂直波导至微带线自双工转换

这封信介绍了一种用于双波段应用的新型垂直波导到微带线自双工转换。该过渡是通过标准印刷电路板(PCB)制造工艺实现的,使其适合大规模生产和实际应用。标准波导被拧在叠层的顶部。双波段自双工操作是通过将两个微带(每个波段一个)通过 H 形槽耦合到两个辐射贴片来实现的。通过在辐射贴片上方添加两个寄生贴片,提高了工作带宽。金属化过孔用于在矩形波导和微带周围形成一个笼子,以防止功率泄漏。已经制造了一个原型,可以在 K/Ka 频段运行。实验结果表明,低频段和高频段的 −10 dB 匹配带宽分别为 20% 和 14%。在这些范围内,测得的最大插入损耗分别约为 0.6 和 0.7 dB。
更新日期:2022-08-01
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