The p-GaN/AlGaN/GaN heterostructures with integrated n-channel and p-channel have been extensively applied in p-channel field effect transistor (p-FET) devices and complementary (CMOS) logic circuits. However, the hole mobility of the p-channel is still low, especially in the heterostructures grown by metalorganic chemical vapor deposition (MOCVD). In this work, an impurity engineering was designed by introducing Ga vacancies in the p-channel, so that the diffused Mg impurity could substitute the Ga site and form MgGa−1 rather than Mginter+2. The charged impurity scattering was hence suppressed due to the reduction of the impurity charge. As a result, the GaN heterostructure with a hole mobility of 21.8 cm2/V·s with a sheet hole density of 1.02 × 1013/cm2 was realized at room temperature by MOCVD. This work paves a way for improving the transport properties of GaN heterostructures and lays a foundation of high performance GaN-based p-FET devices and CMOS logic circuits on Si substrates.

中文翻译：

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MOCVD 通过杂质工程生长的高迁移率 p 沟道 GaN 异质结构


具有集成 n 沟道和 p 沟道的 p-GaN/AlGaN/GaN 异质结构已广泛应用于 p 沟道场效应晶体管 （p-FET） 器件和互补 （CMOS） 逻辑电路。然而，p 通道的空穴迁移率仍然很低，尤其是在金属有机化学气相沉积 （MOCVD） 生长的异质结构中。在这项工作中，通过在 p 通道中引入 Ga 空位来设计杂质工程，以便扩散的 Mg 杂质可以取代 Ga 位点并形成 MgGa-1 而不是 Mginter+2。因此，由于杂质电荷的减少，带电杂质散射被抑制。结果，在室温下通过 MOCVD 实现了空穴迁移率为 21.8 cm2/V·s、片状空穴密度为 1.02 × 1013/cm2 的 GaN 异质结构。这项工作为改善 GaN 异质结构的传输特性铺平了道路，并为基于 GaN 的高性能 p-FET 器件和 Si 衬底上的 CMOS 逻辑电路奠定了基础。