The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionization and parallel conduction. Here, we study phonon scattering in 2D electrons and holes in the 1.6–92.5 K range without the use of extrinsic doping, where both acoustic and longitudinal optic (LO) phonons come into effect. We use undoped GaAs/AlxGa1−xAs heterostructures and examine the temperature dependence of the sample resistivity, extracting phonon coupling constants and the LO activation energy. Our results are consistent with results obtained through approaches other than transport measurements and highlight the benefit of this approach for studying electron–phonon and hole–phonon coupling.

中文翻译：

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同时研究未掺杂 GaAs/AlxGa1−xAs 异质结构中电子和空穴的声子和光声子散射


由于不需要的温度诱导效应（如掺杂剂电离和并联传导），通过电输运测量研究掺杂半导体中的声子耦合具有挑战性。在这里，我们研究了 1.6–92.5 K 范围内 2D 电子和空穴中的声子散射，而无需使用外源掺杂，其中声和纵向光学 （LO） 声子都起作用。我们使用未掺杂的 GaAs/AlxGa1−xAs 异质结构，并检查样品电阻率的温度依赖性，提取声子耦合常数和 LO 活化能。我们的结果与通过输运测量以外的方法获得的结果一致，并强调了这种方法对研究电子-声子和空穴-声子耦合的好处。