Infrared photodetectors (PDs), particularly the near-infrared (NIR) PDs, are essential for applications in remote sensing, night vision, imaging, and so on. ZrTe3, a semimetallic transition metal trichalcogenide with zero bandgap, strong anisotropy, and enhanced conductivity, is emerging as a promising material for NIR PDs, provided that the noise can be effectively suppressed. The solution lies in constructing an appropriate barrier. PdSe2, a typical two-dimensional material with a layer-dependent bandgap is an excellent choice. By constructing a VdW heterostructure with ZrTe3 and six-layer PdSe2, a Schottky barrier is introduced to block photogenerated holes in ZrTe3, resulting in a five-order-of-magnitude reduction in dark current and an enhanced photovoltaic response. The ZrTe3/PbSe2 PD exhibits a self-powered photovoltaic response from 405 nm to 1.55 μm with a peak responsivity of 1.16 × 106 V/W, a rise/fall time of 58/66 μs, a 3 dB frequency of 4.6 kHz, and a linear polarization ratio of 3.15 at 808 nm. The strategy of introducing a Schottky barrier to semimetal-based PDs addresses the issues of high noise and biased working conditions, paving the way for high-performance semimetallic PDs in the NIR range.

中文翻译：

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具有肖特基势垒的 ZrTe3/PdSe2 vs-NIR 探测器增强了光伏性能


红外光电探测器 （PD），尤其是近红外 （NIR） PD，对于遥感、夜视、成像等应用至关重要。ZrTe3 是一种半金属过渡金属三硫化物，具有零带隙、强各向异性和增强的导电性，如果能够有效抑制噪声，则正在成为一种很有前途的近红外 PD 材料。解决方案在于构建适当的屏障。PdSe2 是一种典型的二维材料，具有层依赖性带隙，是一个很好的选择。通过用 ZrTe3 和六层 PdSe2 构建 VdW 异质结构，引入肖特基势垒以阻挡 ZrTe3 中的光生空穴，从而使暗电流减少 5 个数量级并增强光伏响应。ZrTe3/PbSe2 PD 在 405 nm 至 1.55 μm 范围内表现出自供电光伏响应，峰值响应度为 1.16 × 106 V/W，上升/下降时间为 58/66 μs，3 dB 频率为 4.6 kHz，在 808 nm 处的线性极化比为 3.15。在半金属基 PD 中引入肖特基势垒的策略解决了高噪声和偏置工作条件的问题，为 NIR 范围内的高性能半金属 PD 铺平了道路。