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Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors
Applied Physics Letters ( IF 3.5 ) Pub Date : 2024-12-19 , DOI: 10.1063/5.0220211
Sofie Vogt, Daniel Splith, Sebastian Köpp, Peter Schlupp, Clemens Petersen, Holger von Wenckstern, Marius Grundmann
Applied Physics Letters ( IF 3.5 ) Pub Date : 2024-12-19 , DOI: 10.1063/5.0220211
Sofie Vogt, Daniel Splith, Sebastian Köpp, Peter Schlupp, Clemens Petersen, Holger von Wenckstern, Marius Grundmann
We present α-Ga2O3:Zr based metal–semiconductor field-effect transistors (MESFETs) with PtOx/Pt gate contacts. Pulsed laser deposition is used to grow the α-Ga2O3:Zr thin films in a two-step process on m-plane α-Al2O3. A nominally undoped α-Ga2O3 layer is grown at high growth temperature as growth template. Subsequently, a α-Ga2O3:Zr layer is grown at a lower growth temperature. We compare the performance of Ring-FET devices on a planar 30 nm thick zirconium doped layer deposited at 465 °C and mesa-FETs on a 35 nm thick thin film deposited at 500 °C. The Ring-FETs have current on/off ratios as high as 1.7×109 and a threshold voltage of −0.28 V, and they exhibit very low mean sub-threshold swing of (110±20) mV/dec. For the mesa-FETs, smaller current on/off ratios of 4×107 are measured and a threshold voltage of −1.5 V was obtained due to the larger thin film thickness. The on/off ratio is limited by a higher tunneling current in the off-regime. We present high voltage measurements, which show a breakdown of the mesa-FET device at −340 V, corresponding to a high breakdown field of 1.36 MV/cm and significantly exceeding the previously achieved breakdown voltage for α-Ga2O3 based MESFETs.
中文翻译:
横向 α-Ga2O3:Zr 金属-半导体场效应晶体管
我们推出了基于 α-Ga2O3:Zr 的金属半导体场效应晶体管 (MESFET),带有 PtOx/Pt 栅极触点。脉冲激光沉积用于在 m 平面 α-Al2O3 上分两步工艺生长 α-Ga2O3:Zr 薄膜。标称上未掺杂的 α-Ga2O3 层作为生长模板在高生长温度下生长。随后,α-Ga2O3:Zr 层在较低的生长温度下生长。我们比较了 Ring-FET 器件在 465 °C 沉积的 30 nm 厚平面锆掺杂层上的性能,以及 Mesa-FET 在 500 °C 沉积的 35 nm 厚薄膜上的性能。 Ring-FET 的电流开/关比高达 1.7×109,阈值电压为 −0.28 V,并且它们表现出 (110±20) mV/dec 的极低平均亚阈值摆幅。对于 mesa-FET,测量的电流开/关比较小,为 4×107,并且由于薄膜厚度较大,因此获得了 −1.5 V 的阈值电压。开/关比受关断状态下较高隧穿电流的限制。我们提出了高压测量结果,其中显示 mesa-FET 器件在 −340 V 时击穿,对应于 1.36 MV/cm 的高击穿场,明显超过了之前基于 α-Ga2O3 的 MESFET 实现的击穿电压。
更新日期:2024-12-19
中文翻译:

横向 α-Ga2O3:Zr 金属-半导体场效应晶体管
我们推出了基于 α-Ga2O3:Zr 的金属半导体场效应晶体管 (MESFET),带有 PtOx/Pt 栅极触点。脉冲激光沉积用于在 m 平面 α-Al2O3 上分两步工艺生长 α-Ga2O3:Zr 薄膜。标称上未掺杂的 α-Ga2O3 层作为生长模板在高生长温度下生长。随后,α-Ga2O3:Zr 层在较低的生长温度下生长。我们比较了 Ring-FET 器件在 465 °C 沉积的 30 nm 厚平面锆掺杂层上的性能,以及 Mesa-FET 在 500 °C 沉积的 35 nm 厚薄膜上的性能。 Ring-FET 的电流开/关比高达 1.7×109,阈值电压为 −0.28 V,并且它们表现出 (110±20) mV/dec 的极低平均亚阈值摆幅。对于 mesa-FET,测量的电流开/关比较小,为 4×107,并且由于薄膜厚度较大,因此获得了 −1.5 V 的阈值电压。开/关比受关断状态下较高隧穿电流的限制。我们提出了高压测量结果,其中显示 mesa-FET 器件在 −340 V 时击穿,对应于 1.36 MV/cm 的高击穿场,明显超过了之前基于 α-Ga2O3 的 MESFET 实现的击穿电压。