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Angular Dependence of Hump‐Shape Hall Effects for Distinguishing between Karplus–Luttinger and Geometrical Origins Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-19 Zhi Shiuh Lim, Lin Er Chow, Amy Khoong Hong Khoo, Ganesh Ji Omar, Zhaoyang Luo, Zhaoting Zhang, Hong Yan, Ping Yang, Robert Laskowski, A. Ariando
Among the vast magnetic heterostructures explored in Condensed Matter Physics, two contrasting interpretations of the hump‐shaped Hall Effects remain ambiguous and debated, namely, the overlap of two opposite‐signed Karplus–Luttinger Hall loops associated with inhomogeneous collinear domains with perpendicular anisotropy, or the Geometrical/Topological Hall Effect emanated from hexagonal close‐packed
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Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-19 Jianyu Yang, Kangkai Tian, Chunshuang Chu, Yonghui Zhang, Ke Jiang, Xiaojuan Sun, Dabing Li, Xiao Wei Sun, Zi‐Hui Zhang
In this work, AlGaN‐based deep ultraviolet Fabry–Perot (FP) laser diodes (DUV LDs) are designed by using Technology Computer Aided Design (TCAD) simulations, and the physical models for DUV LDs are also developed. It is found that the optical absorption in the p‐region significantly increases the optical loss and reduces the laser power. Hence, properly increasing the Al composition for the p‐waveguide
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Impact of Gate Voltage on Mobility of Charge Carriers in Conductive Channel of Organic Molecular Semiconductors: Transport Landscape Assessed by Alternating and Direct Current Mode Techniques Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-19 Wookjin Choi, Wakana Matsuda, Shu Seki
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Acceleration and Deceleration Behavior of Skyrmion Controlled by Curvature Gradient in Elliptical‐Ring Track Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-18 Na Cai, Yan Liu
The potential of skyrmions as information carriers in spintronic devices has garnered significant attention. In this paper, the study investigates the current driven movement behavior of skyrmions in elliptical‐ring tracks (ERTs). The findings suggest that the curvature gradient of ERTs can either increase or decrease skyrmion velocity. The increase in velocity aids in transmitting skyrmions, while
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Epitaxial Single‐Crystalline PZT Thin Films on ZrO2‐Buffered Si Wafers Fabricated Using Spin‐Coating for Mass‐Produced Memristor Devices Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-18 Haining Li, Takeshi Kijima, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki
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Mimicking Classical Conditioning of Fear Using a Dynamic Synaptic Memristor Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-18 Dongyeol Ju, Sungjun Kim
The growing demand for energy‐efficient computing has prompted investigations into the diverse functionalities of resistive switching memristors, which show promise for neuromorphic computing. These memristors can emulate artificial synapses, nociceptors, and computational capabilities like reservoir computing. However, the integration of emotions, a critical aspect of brain function, remains unexplored
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Correction to “Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors” Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-17
Adv. Electron. Mater. 2020, 6, 1901414 There was an error in converting the diffraction angle of the grazing incidence X-ray diffraction (GIXD) to the scattering vector in the original article. The authors wish to correct panels (c) and (d) in Figure 3. The correct Figure 3 should appear as follows: The authors apologize for any inconvenience these errors may have caused.
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Enlightenment of Deionized‐Water Bathing IGZO TFTs Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-17 Yujia Qian, Xishuang Gu, Ting Li, Peixuan Hu, Xiaohan Liu, Junyan Ren, Lingyan Liang, Hongtao Cao
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Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-15 Xingzhao Ma, Libin Tang, Menghan Jia, Yuping Zhang, Wenbin Zuo, Yuhua Cai, Rui Li, Liqing Yang, Kar Seng Teng
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Unraveling the Roles of Switching and Relaxation Times in Volatile Electrochemical Memristors to Mimic Neuromorphic Dynamical Features Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-13 Mrinmoy Dutta, Stefano Brivio, Sabina Spiga
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Secondary Order RC Sensor Neuron Circuit for Direct Input Encoding in Spiking Neural Network Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-12 Simiao Yang, Deli Li, Jiuchao Feng, Binchen Gong, Qing Song, Yue Wang, Zhen Yang, Yonghua Chen, Qi Chen, Wei Huang
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Dielectric‐Doped 2D Tellurium Diodes for Zero‐Bias Radio Frequency Power Detection Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-11 Paula Palacios, Abdelrahman M. Askar, Francisco Pasadas, Mohamed Saeed, Enrique G. Marin, Michael M. Adachi, Renato Negra
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Edible Electronic Components Made from Recycled Food Waste (Adv. Electron. Mater. 7/2024) Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-10 Milan R. Radovanović, Goran M. Stojanović, Mitar Simić, Dragana Suvara, Lazar Milić, Sanja Kojić, Biljana D. Škrbić
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Infrared Photodetector Based on van der Waals MoS2/MoTe2 Hetero‐Bilayer Modulated by Photogating Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-10 Bining Sheng, Jiong Yang, Chao Zhang, Maoxiang Jiang, Wentao Ma, Xiaoyi Liu, Kourosh Kalantar‐Zadeh, Zefeng Chen, Xiaofeng Li
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Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review (Adv. Electron. Mater. 7/2024) Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-10 Kaoru Toko, Shintaro Maeda, Takamitsu Ishiyama, Koki Nozawa, Masayuki Murata, Takashi Suemasu
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Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-10 Oradee Srikimkaew, Saverio Ricci, Matteo Porzani, Thien Tan Dang, Yusuke Nakaoka, Yuki Usami, Daniele Ielmini, Hirofumi Tanaka
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Liquid‐Solid Combination Memristors with Switchable Resistance Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-10 Libing Duan, Xue Han, Ruochen Pei, Qianwen Peng, Shenghui Guo, Yangyang Li, Wangchang Geng
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Stretching, Tapping, or Compressing–What Role Does Triboelectricity Play in the Signal Output from Piezoelectric Nanogenerators? Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-09 Alireza Akbarinejad, Holger Fiedler, Jade Nguyen, Zifan Li, Donn Adam Gito, Peter C. Sherrell, Amanda V. Ellis, Kean Aw, Jenny Malmstrom
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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-09 Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury
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Ferroelectric Polarization Dependent Piezoelectric Hardening in BiFeO3‐BaTiO3 Lead‐Free Ceramics Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-08 Myang Hwan Lee, Hae In Choi, Da Jeong Kim, Ji Su Kim, Sang Woo Lee, Yubin Park, Sang Mo Yang, Tae Kwon Song
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Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2 Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-05 Kyle T. Munson, Riccardo Torsi, Fatimah Habis, Lysander Huberich, Yu‐Chuan Lin, Yue Yuan, Ke Wang, Bruno Schuler, Yuanxi Wang, John B. Asbury, Joshua A. Robinson
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In Situ Exploration of Dipole Field Effects on Weak Hysteresis in 3D/2D Perovskites Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-04 Zeyu Chen, Fan Wu, Rajesh Pathak, Lu Chen, Jinxin Bian, Sally Mabrouk, Jeffrey W. Elam, Quinn Qiao
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Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐Based Memristive Devices Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-04 Thoai‐Khanh Khuu, Aleksandra Koroleva, Carlos Moncasi, Alexander Stangl, David Cooper, Gauthier Lefèvre, Fabrice Wilhelm, Andrei Rogalev, Matthieu Weber, Carmen Jiménez, Mónica Burriel
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Switching Dynamics and Improved Efficiency of Free‐Standing Antiferroelectric Capacitors Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-04 Umair Saeed, David Pesquera, Ying Liu, Ignasi Fina, Saptam Ganguly, José Santiso, Jessica Padilla‐Pantoja, José Manuel Caicedo Roque, Xiaozhou Liao, Gustau Catalan
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Mitigation of Humidity Interference by Graphene Derivatives for Efficient Temperature Sensors without Encapsulation Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-03 Veronika Šedajová, Jiří Štulík, Petr Jakubec, Michal Otyepka
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Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-03 José Carlos Pérez‐Martínez, Diego Martín‐Martín, Belén Arredondo, Beatriz Romero
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Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-02 Maksym Myronov, Pedram Jahandar, Simone Rossi, Kevin Sewell, Felipe Murphy‐Armando, Fabio Pezzoli
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Conjugated Carbonyl Compound‐Enhanced Hydrogels for Tactile Recognition Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-02 Xue‐Qing Zhan, Han Chen, Zhi‐Ling Hong, Yong‐Ping Leng, Chang‐Chang Zhu, Chang‐Bo Zhang, Zhong‐Xiang Tang, Qian Chen, Ning Ma, Fang‐Chang Tsai
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Automated Scanning Dielectric Microscopy Toolbox for Operando Nanoscale Electrical Characterization of Electrolyte‐Gated Organic Transistors Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-02 Shubham Tanwar, Ruben Millan‐Solsona, Sara Ruiz‐Molina, Marta Mas‐Torrent, Adrica Kyndiah, Gabriel Gomila
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Flexible IGZO TFT Technology for Shift Register Drivers Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-07-02 Bin Bao, Dmitriy D. Karnaushenko, Jiawang Xu, Shouguo Wang, Vineeth Kumar Bandari, Oliver G. Schmidt, Daniil Karnaushenko
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Improvement of Conductivity and Adhesion of AgNW Flexible Transparent Conductive Coatings by the Capillary Forces Effect and Polyvinyl Alcohol Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Marat Kaikanov, Alshyn Abduvalov
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Charge Transport in Blue Quantum Dot Light‐Emitting Diodes Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Shuxin Li, Wenxin Lin, Haonan Feng, Paul W. M. Blom, Jiangxia Huang, Jiahao Li, Xiongfeng Lin, Yulin Guo, Wenlin Liang, Longjia Wu, Quan Niu, Yuguang Ma
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Enhancement of Thermal Boundary Conductance between MoS2 and Dielectric Layer by Self‐Assembled Monolayers Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Jian Huang, Xiaotong Yu, Xiaofeng Wang, Fanfan Wang, Zexin Liu, Kai Yang, Yue Yue, Kangyong Li, Ruiwen Dai, Aming Lin, Yiyang Sun, Tianlong Zhao, Zhiqiang Wang, Yuan Gao, Lifu Zhang, Dongdong Chen, Guoqing Xin
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Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2 Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Md Akibul Islam, Eric Nicholson, Nima Barri, Momoko Onodera, Danny Starkov, Peter Serles, Shuo He, Boran Kumral, Ali Zavabeti, Haleh Shahsa, Teng Cui, Guorui Wang, Tomoki Machida, C.V. Singh, Tobin Filleter
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Inkjet‐Printed Phase Change Memory Devices Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Hanglin He, Dhananjeya Kumaar, Kevin Portner, Till Zellweger, Florian M. Schenk, Simon Wintersteller, Vitor Vlnieska, Alexandros Emboras, Vanessa Wood, Maksym Yarema
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Investigation of Gallium Nitride Based HEMTs with Thermal Dissipation Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Hao‐Xuan Zheng, William Anderson Lee Sanchez, Kun‐Lin Lin, Ray‐Hua Horng
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Insights into a Defective Potassium Sulfido Cobaltate: Giant Magnetic Exchange Bias, Ionic Conductivity, and Electrical Permittivity Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 M. Reza Ghazanfari, Simon Steinberg, Konrad Siemensmeyer, Johannes C. Vrijmoed, Mirko Tallu, Stefanie Dehnen, Günther Thiele
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Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Qian Zhang, Nannan You, Jiayi Wang, Yang Xu, Kuo Zhang, Shengkai Wang
Post‐oxidation annealing in oxygen (O2) ambient can improve the quality of the SiO2/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O2)), this work focuses on the dependence of the annealing effect on P(O2) in a wide range from 0.01 Pa to 101 kPa for SiO2/SiC stack. In order to minimize the C‐related defects generated
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Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf0.5Zr0.5O2 Fatigue Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-29 Zimeng Zhang, Isaac Craig, Tao Zhou, Martin Holt, Raul Flores, Evan Sheridan, Katherine Inzani, Xiaoxi Huang, Joyeeta Nag, Bhagwati Prasad, Sinéad M. Griffin, Ramamoorthy Ramesh
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3D Printing of Customizable Transient Bioelectronics and Sensors Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-27 Nicolas Fumeaux, Danick Briand
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Defect‐Driven Light Perception and Memristor Storage with Phase Transition in Vanadium Dioxide Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-27 Linkui Niu, Peiran Xu, Tiantian Huang, Wanli Yang, Zhimin Chen, Xin Chen, Ning Dai
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Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-26 Sara Vecchi, Francesco Maria Puglisi, Pascal Appelt, Roberto Guido, Xuetao Wang, Stefan Slesazeck, Thomas Mikolajick, Suzanne Lancaster
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3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-26 Prabhat Kumar, Michael Hoffmann, Andy Nonaka, Sayeef Salahuddin, Zhi (Jackie) Yao
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MXene Inks for High‐Throughput Printing of Electronics Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-26 Sina Abdolhosseinzadeh, René Schneider, Mohammad Jafarpour, Céline Merlet, Frank Nüesch, Chuanfang (John) Zhang, Jakob Heier
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A Brilliant Magnetic Refrigerant Operating Near Liquid Helium Temperature: Enhanced Magnetocaloric Effect in Ferromagnetic EuTi0.75Al0.125Zr0.125O3 Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-25 Huicai Xie, Jiaxin Jiang, Lu Tian, Zhaojun Mo, Guodong Liu, Xinqiang Gao, Jun Shen, Yao Liu
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Solving the Annealing of Mo Interconnects for Next‐Gen Integrated Circuits Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-24 Ivan Erofeev, Antony Winata Hartanto, Khakimjon Saidov, Zainul Aabdin, Antoine Pacco, Harold Philipsen, Weng Weei Tjiu, Hui Kim Hui, Frank Holsteyns, Utkur Mirsaidov
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Organic Visible‐Blind Ultraviolet Photodiodes and Pixel‐Array Imagers Based on [1]Benzothieno[3,2‐b]Benzothiophene (BTBT) Derivatives Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-24 Wei Wang, Yujun Deng, Shuai Sun, Massimiliano Galluzzi, Yang Jiao, Paul K. Chu, Zeren Li, Jia Li, Jianquan Yao
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Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-22 Naim Hossain Patoary, Fahad Al Mamun, Jing Xie, Tibor Grasser, Ivan Sanchez Esqueda
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A Study on h‐BN Resistive Switching Temporal Response Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-22 Mirembe Musisi‐Nkambwe, Sahra Afshari, Jing Xie, Hailey Warner, Ivan Sanchez Esqueda
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Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-21 Samantha T. Jaszewski, Shelby S. Fields, Sebastian Calderon, Benjamin L. Aronson, Thomas E. Beechem, Kyle P. Kelley, Casey Zhang, Megan K. Lenox, Ian A. Brummel, Elizabeth C. Dickey, Jon F. Ihlefeld
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Facile Fabrication of Melamine/MXene/FeNi-PBA Composite Derived Multi-Interface Magnetic Carbon Foam for High-Efficiency Microwave Absorption Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-18 Jiaao Yu, Hui Luo, Sihai Lv, Zhihui Wang, Fu Chen, Yongzhi Cheng, Xiangcheng Li
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Optimizing Length Scalability of InGaZnO Thin-Film Transistors through Lateral Carrier Profile Engineering and Negative ΔL Extension Structure Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-18 Su Hyun Kim, Mingoo Kim, Ji Hwan Lee, Kihwan Kim, Joon Seok Park, Jun Hyung Lim, Saeroonter Oh
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Degradable and Printed Microstrip Line for Chipless Temperature and Humidity Sensing Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-20 James Bourely, Jaemin Kim, Christian Beyer, Oleksandr Vorobyov, Xavier Aeby, Gustav Nyström, Danick Briand
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Quantum‐Dot‐Induced Energy Filtering Effect in Organic Thermoelectric Nanocomposites Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-20 Daegun Kim, Jimin Kim, Sein Chung, Kilwon Cho
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Ion Migration and Space‐Charge Zones in Metal Halide Perovskites Through Short‐Circuit Transient Current and Numerical Simulations Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-20 Agustin O. Alvarez, Marisé García‐Batlle, Ferdinand Lédée, Eric Gros‐Daillon, Javier Mayén Guillén, Jean‐Marie Verilhac, Thibault Lemercier, Julien Zaccaro, Lluis F. Marsal, Osbel Almora, Germà Garcia‐Belmonte
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Al-Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-18 Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis
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Modeling, Parameters and Synaptic Plasticity Analysis of Lateral-Ionic-Gated Graphene Synaptic FETs Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-17 Xiaoying He, Bowen Cao, Minghao Xu, Kun Wang, Lan Rao
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Resolving the Relaxation of Volatile Valence Change Memory Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-17 Johannes Hellwig, Carsten Funck, Sebastian Siegel, Alexandros Sarantopoulos, Dimitrios Spithouris, Stephan Menzel, Regina Dittmann
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Polarization Anisotropy of Ultrafast Electronic Dynamics in AB-Stacked Rhenium Disulfide Adv. Electron. Mater. (IF 5.3) Pub Date : 2024-06-17 Yulu Qin, Rui Wang, Jianing Zhang, Yeqinbo Zhang, Yunkun Wang, Xiaofang Li, Yunan Gao, Liang-You Peng, Qihuang Gong, Yunquan Liu