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Magneto‐Capacitance of PEDOT:PSS Thin Films; Effects of a Two‐Phase System and Coulomb Interaction
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-12-04 , DOI: 10.1002/aelm.202400015 Daniel Nikiforov, Nir Tessler, Eitan Ehrenfreund
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2024-12-04 , DOI: 10.1002/aelm.202400015 Daniel Nikiforov, Nir Tessler, Eitan Ehrenfreund
The study of the net magneto‐capacitance, C (B ), in thin films of the conducting polymer Poly(3 4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is presented. In the films there are charged electrically‐conducting PEDOT‐rich regions surrounded by PSS insulating charged material. The high‐conductivity grade PEDOT:PSS thin films are studied at low temperature, where the hopping conduction is dominant. It is experimentally observed that there is a finite net magneto‐capacitance, C (B ), in the temperature range T = 1.7–3 K. Thus, the observed C (B ) is a direct evidence for an intra‐site Coulomb interaction, U ≈ 2 meV, among the mobile charge carriers in the PEDOT‐rich regions. The lifting of spin degeneracy motivates PEDOT for use in spintronic applications.
中文翻译:
PEDOT:PSS 薄膜的磁电容;两相系统和库仑相互作用的影响
介绍了导电聚合物聚(3 4-乙烯二氧噻吩):p酰(苯乙烯磺酸盐)(PEDOT:PSS)薄膜中的净磁电容 C(B) 的研究。在薄膜中,有带电导电的富含 PEDOT 的区域,周围环绕着 PSS 绝缘带电材料。在低温下研究了高导电级 PEDOT:PSS 薄膜,其中跳跃传导占主导地位。实验观察到,在 T = 1.7–3 K 的温度范围内,存在一个有限的净磁电容 C(B)。因此,观察到的 C(B) 是 PEDOT 丰富区域的移动电载流子之间存在位点内库仑相互作用 U ≈ 2 meV 的直接证据。自旋简并性的提升促使 PEDOT 用于自旋电子学应用。
更新日期:2024-12-04
中文翻译:
PEDOT:PSS 薄膜的磁电容;两相系统和库仑相互作用的影响
介绍了导电聚合物聚(3 4-乙烯二氧噻吩):p酰(苯乙烯磺酸盐)(PEDOT:PSS)薄膜中的净磁电容 C(B) 的研究。在薄膜中,有带电导电的富含 PEDOT 的区域,周围环绕着 PSS 绝缘带电材料。在低温下研究了高导电级 PEDOT:PSS 薄膜,其中跳跃传导占主导地位。实验观察到,在 T = 1.7–3 K 的温度范围内,存在一个有限的净磁电容 C(B)。因此,观察到的 C(B) 是 PEDOT 丰富区域的移动电载流子之间存在位点内库仑相互作用 U ≈ 2 meV 的直接证据。自旋简并性的提升促使 PEDOT 用于自旋电子学应用。