Micro‐Light Emitting Diodes (Micro‐LEDs) are key components in the field of next‐generation display technologies. In the process of making Micro‐LED displays, millions of chips need to be transferred to the driver substrate using mass transfer technology. Conventional transfer techniques, such as stamp transfer, present challenges in terms of processing efficiency and applicability due to the need for pre‐prepared tethered structures and fixed chip pitch. To overcome these limitations, the t hin‐film‐assisted laser transfer and bonding (TFA‐LTAB) technology is proposed. This technique is able to efficiently and accurately transfer Micro‐LEDs from the source substrate to the driver substrate with arbitrary pitch through thin‐film assistance, and electrically connects the chips through flip‐chip bonding technology, which significantly improves the efficiency and reliability of the transfer and joining. The TFA‐LTAB method proposed in this study integrates laser transfer and flip‐chip bonding techniques. Through the TFA‐LTAB process, these Micro‐LEDs cultured on sapphire substrates are precisely assembled onto transparent low‐temperature polycrystalline silicon thin‐film transistors (LTPS‐TFTs). The method successfully achieved mass transfer and bonding of Micro‐LEDs with a size of 30 × 15 µm2 at low temperature (180 °C) and low pressure (0.08 MPa).

中文翻译：

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用于制造 Micro-LED 显示器的薄膜辅助激光转移和键合 （TFA-LTAB）


微型发光二极管 （Micro-LED） 是下一代显示技术领域的关键组件。在制造 Micro-LED 显示器的过程中，需要使用巨量转移技术将数百万个芯片转移到驱动器基板上。由于需要预先准备好的系留结构和固定的芯片间距，传统的转印技术（如邮票转印）在加工效率和适用性方面提出了挑战。为了克服这些限制，提出了 t hin-film-assisted laser transfer and bonding （TFA-LTAB） 技术。该技术能够通过薄膜辅助，高效、准确地将 Micro‐LED 从源衬底转移到任意间距的驱动衬底，并通过倒装芯片键合技术将芯片电气连接，显著提高了转移和连接的效率和可靠性。本研究中提出的 TFA-LTAB 方法集成了激光转移和倒装芯片键合技术。通过 TFA-LTAB 工艺，这些在蓝宝石衬底上培养的 Micro-LED 被精确地组装到透明的低温多晶硅薄膜晶体管 （LTPS-TFT） 上。该方法在低温 （180 °C） 和低压 （0.08 MPa） 下成功实现了尺寸为 30 × 15 μm2 的 Micro-LED 的质量传递和键合。