In recent years, memristors have drawn attention as non‐volatile memory devices for advanced computing engineering. The features of memristors, such as hysteresis, high resistance state to low resistance state ratio, retention time, etc., are determined by the material, structure of the device, the switching mechanism, and the kinetics resulting from the characteristics of the materials. Here, a resistive switching is proposed based on the aromaticity change of the material. A device has been built based on tetracyclone that undergoes the transition from an antiaromatic to an aromatic state upon applied potential. This phenomenon results in the presence of two distinguishable, and more importantly, stable resistive states of the memristor. On the basis of theoretical and experimental investigation, it is demonstrated that the working principle of the device depends on the redox change of the molecules. This study provides the foundation for a new kind of memristive switching mechanism: the formation of virtual conductivity paths. They can be a key to improving the performance of semiconductor memory devices in crucial factors such as stability, reversibility, and nonvolatility because these paths are related to electron delocalization and do not involve any significant structural changes in the device (e.g., diffusion).

中文翻译：

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芳香度依赖性磁阻切换


近年来，忆阻器作为高级计算工程的非易失性存储器件而受到关注。忆阻器的特性，如磁滞、高电阻状态与低电阻状态的比值、保持时间等，是由材料、器件的结构、开关机构以及材料特性产生的动力学决定的。在这里，根据材料的芳香性变化提出了电阻开关。已经建立了一种基于四旋风分离器的装置，该装置在施加电位时从反芳烃转变为芳香族状态。这种现象导致忆阻器存在两种可区分的、更重要的是稳定的电阻状态。在理论和实验研究的基础上，证明该装置的工作原理取决于分子的氧化还原变化。本研究为一种新型忆阻开关机制提供了基础：虚拟电导率路径的形成。它们可能是在稳定性、可逆性和非易失性等关键因素上提高半导体存储器件性能的关键，因为这些路径与电子离域有关，不涉及器件中的任何重大结构变化（例如扩散）。