The LaInO3/BaSnO3 heterostructure has recently emerged as a promising platform for realizing 2D electron gas (2DEG) with unique transport properties, including excellent field‐effect at room temperature. However, there is a limit to improving its mobility due to intrinsic defects including the threading dislocations occurring during film growth. In spite of such high density defects at present, as an effort to increase the mobility of the 2DEG, the 2D carrier density to 1014 cm−2 by ionic‐liquid gating is increased and we found the resulting 2DEG mobility enhancement up to 2100 cm2 V−1 s−1 at 10 K, which is consistent with the fact that 2‐dimensionality offers more effective screening for defects. This findings offer insights into the properties of 2DEG formed with perovskite oxide semiconductor BaSnO3 as well as highlight its future potential for applications.

中文翻译：

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通过电双层门控观察 LaInO3/BaSnO3 界面在 2DEG 中 2000 cm2/V s 以上的迁移率


LaInO3/BaSnO3 异质结构最近成为实现具有独特传输特性的二维电子气 （2DEG） 的有前途的平台，包括在室温下出色的场效应。然而，由于内在缺陷（包括薄膜生长过程中发生的螺纹位错），提高其迁移率是有限的。尽管目前存在如此高密度的缺陷，但为了提高 2DEG 的迁移率，通过离子-液体门控将 2D 载流子密度提高到 1014 cm-2，我们发现由 此产生的 2DEG 迁移率增强在 10 K 时高达 2100 cm2 V-1 s-1，这与二维提供更有效的缺陷筛查的事实一致。这一发现为钙钛矿氧化物半导体 BaSnO3 形成的 2DEG 的性质提供了见解，并突出了其未来的应用潜力。