Conventional diode‐based rectifiers suffer from limited applicability in low‐power electronics and high‐frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non‐centrosymmetric quantum materials can enable diode‐free rectification with advantages such as large active area, low power threshold, and high cutoff frequency. Here, a giant NHE is reported in a chiral semiconductor hosting Weyl nodes, achieving a voltage responsivity of up to 1.4×107 V W−1 at low temperature and 1.7×106 V W−1 at room temperature. This represents orders of magnitude improvement over existing NHE rectifiers and commercial Schottky diodes. This ultrahigh rectification is attributed to the significant contributions of Weyl nodes at the conduction band edge. Moreover, the device exhibits remarkable tunability through electrostatic gate voltages. The findings establish Weyl semiconductors as a promising platform for developing highly sensitive NHE rectifiers for low‐power and high‐frequency applications.

中文翻译：

---

巨型非线性霍尔效应在 Weyl 半导体中诱导超高整流


由于其固有的结结构，传统的基于二极管的整流器在低功率电子产品和高频无线网络中的适用性有限。最近的研究表明，非中心对称量子材料中的非线性霍尔效应 （NHE） 可以实现无二极管整流，具有大有效面积、低功率阈值和高截止频率等优点。在这里，在承载外尔结的手性半导体中报道了一个巨大的 FFE，在低温下实现了高达 1.4×107 V W-1 的电压响应度，在室温下实现了高达 1.7×106 V W-1 的电压响应度。这比现有的 NHE 整流器和商用肖特基二极管提高了几个数量级。这种超高整流归因于导带边缘 Weyl 节点的显着贡献。此外，该器件在静电栅极电压下表现出卓越的可调性。研究结果使 Weyl 半导体成为开发用于低功耗和高频应用的高灵敏度 NHE 整流器的有前途的平台。