Integrating pain perception into wearable electronics or humanoid robots within artificial neuromorphic systems is highly desirable, as it allows for the identification of harmful stimuli and the generation of appropriate responses. In this study, flexible pain perception synaptic transistors is developed based on solid state ionic‐liquid‐cross‐linking‐poly (4‐vinylphenol) (IL‐c‐PVP) electrolyte and IGZO channel with excellent electrical and photoelectric performances. Typical transistor synaptic plasticity, such as paired pulse facilitation, short‐term memory, and long‐term potentiation, is realized with the electrolyte comprising 40% ionic liquid, featuring a large electric‐double‐layer capacitance of 0.65 µF cm−2 at 20 Hz. In addition, due to the low ion mobility and large capacity of the electrolyte, alongside the persistent photoconductivity to UV light and the high electron carrier mobility of the IGZO, the fabricated synaptic transistors demonstrated excellent pain perception capabilities, including pain threshold, peripheral sensitization, desensitization and central regulation in response to both electrical and optical stimuli with ultralow energy consumption (≈1.3 fJ per event) and desirable mechanical flexibility. Moreover, classical Pavlovian pain conditioning is successfully simulated through electro‐optical co‐modulation, and visual imaging in the curved state is demonstrated, highlighting the potential applications of these synaptic transistors in biomimetic nervous systems.

中文翻译：

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具有固态电解质的电光 InGaZnO 突触晶体管，用于疼痛感知


将疼痛感知集成到人工神经形态系统内的可穿戴电子设备或人形机器人中是非常可取的，因为它可以识别有害刺激并产生适当的反应。在本研究中，基于固态离子-液体-交联-聚（4-乙烯基苯酚）（IL-c-PVP）电解质和 IGZO 通道开发了柔性疼痛感知突触晶体管，具有优异的电气和光电性能。典型的晶体管突触可塑性，例如配对脉冲促进、短期记忆和长期增强，是通过包含 40% 离子液体的电解质实现的，在 20 Hz 时具有 0.65 μF cm-2 的大双电层电容。此外，由于电解质的低离子迁移率和大容量，以及对紫外光的持续光电导性和 IGZO 的高电子载流子迁移率，制造的突触晶体管表现出优异的疼痛感知能力，包括响应电和光刺激的疼痛阈值、外周敏化、脱敏和中枢调节，具有超低能耗（每次事件 ≈1.3 fJ）和理想的机械灵活性。此外，通过电光共调制成功模拟了经典的巴甫洛夫疼痛调节，并展示了弯曲状态下的视觉成像，突出了这些突触晶体管在仿生神经系统中的潜在应用。