The large-area transfer of two-dimensional (2D) materials from their growth substrate is crucial for electronic device integration. However, it is easy to damage sub-1-nm thick materials, and existing transfer methods typically involve a trade-off in terms of lateral size, quality and accuracy. Here we report a mass transfer printing technology that uses a polydimethylsiloxane stamp patterned with precisely arranged micro-posts to gently transfer wafer-level 2D arrays and to stack van der Waals heterostructure arrays. After the stamp is brought into contact with the 2D material, an ethanol–water solution is added, which penetrates the 2D material–growth substrate interface between the non-contact regions of the stamp and causes the film to delaminate. We use the approach to transfer a 2-inch (~5 cm) monolayer molybdenum disulfide film containing more than 1,000,000 arrays with lateral dimensions of 20 × 20 µm², a density of 62,500 arrays per cm² and a yield of 99% in a single operation. Integrated 2D transistors with different device architectures created with the technology show a device yield of around 97.9% (back gate) and nearly damage-free electrical properties (top and bottom gate). We also develop a capillary force-assisted transfer model to explain the rapid transfer mechanism.

二维 （2D） 材料从其生长基板的大面积转移对于电子设备集成至关重要。然而，很容易损坏亚 1 nm 厚的材料，并且现有的转移方法通常涉及横向尺寸、质量和精度方面的权衡。在这里，我们报道了一种大规模转移打印技术，该技术使用聚二甲基硅氧烷印章，上面有精确排列的微柱，可以轻柔地转移晶圆级 2D 阵列并堆叠范德华异质结构阵列。在邮票与 2D 材料接触后，加入乙醇-水溶液，该溶液渗透到邮票非接触区域之间的 2D 材料-生长基材界面，导致薄膜分层。我们使用该方法转移 2 英寸（~5 cm）单层二硫化钼膜，其中包含超过 1,000,000 个阵列，横向尺寸为 20 × 20 μm²，密度为每 cm² 62,500 个阵列，单次操作产量为 99%。使用该技术创建的不同器件架构的集成 2D 晶体管显示出约 97.9% 的器件良率（后栅）和几乎无损伤的电气特性（顶部和底部栅极）。我们还开发了一个毛细管力辅助转移模型来解释快速转移机制。