Developments in the fabrication processes of monolithic complementary field-effect transistors allow inverters with a 48 nm gate pitch to be created.

中文翻译：

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使用堆叠互补纳米片晶体管构建逆变器


单片互补场效应晶体管制造工艺的发展允许制造具有 48 nm 栅间距的逆变器。