In this paper, the ferroelectric properties of TiN/Ti/Si:HfO2/TiN stacks are shown to be modulated by the Ti oxygen scavenging layer, leading to improved remanent polarization and wake-up at low switching fields. Hard x-ray photoelectron spectroscopy is used to measure the oxygen vacancy (VO) concentration in Si-doped HfO2 based capacitors. This VO engineered ferroelectric stack is then assessed at the wafer scale within 16 kbit 1T-1C FeRAM arrays integrated into 130 nm CMOS. The introduction of a Ti oxygen scavenging layer at the top interface of Si:HfO2-based BEOL-integrated metal/ferroelectric/metal capacitors enhances their ferroelectric (FE) behavior (+100% remanent polarization 2.Pr), confirming the positive role of modest concentrations of VO in orthorhombic phase crystallization at low thermal budgets. It is statistically demonstrated at 16 kbit array level that VO-rich FE Si:HfO2 facilitates 2.5 V FeRAM array operation with improved memory window. The field cycling dependence of the memory window is correlated with the VO concentration, and an endurance of 108 cycles is measured at the array level.

中文翻译：

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使用 Ti 氧清除层的硅掺杂 HfO2 铁电电容器中的氧空位工程


在本文中，TiN/Ti/Si:HfO2/TiN 叠层的铁电特性被 Ti 氧清除层调制，从而改善了低开关场下的剩余极化和唤醒。硬 X 射线光电子能谱用于测量硅掺杂 HfO2 基电容器中的氧空位 (VO) 浓度。然后，在集成到 130 nm CMOS 中的 16 kbit 1T-1C FeRAM 阵列内以晶圆级评估这种 VO 工程铁电堆栈。在 Si:HfO2 基 BEOL 集成金属/铁电/金属电容器的顶部界面引入 Ti 氧清除层增强了其铁电 (FE) 行为（+100% 剩余极化 2.Pr），证实了在低热预算下，正交相结晶中 VO 浓度适中。统计表明，在 16 kbit 阵列级别，富含 VO 的 FE Si:HfO2 有助于 2.5 V FeRAM 阵列操作，并改善存储窗口。存储窗口的场循环依赖性与 VO 浓度相关，并且在阵列级别测量了 108 个循环的耐久性。