Iron-based 1111-type superconductors display high critical temperatures and relatively high critical current densities J_c. The typical approach to increasing J_c is to introduce defects to control dissipative vortex motion. However, when optimized, this approach is theoretically predicted to be limited to achieving a maximum J_c of only ∼30% of the depairing current density J_d, which depends on the coherence length and the penetration depth. Here we dramatically boost J_c in SmFeAsO_1–xH_x films using a thermodynamic approach aimed at increasing J_d and incorporating vortex pinning centres. Specifically, we reduce the penetration depth, coherence length and critical field anisotropy by increasing the carrier density through high electron doping using H substitution. Remarkably, the quadrupled J_d reaches 415 MA cm^–2, a value comparable to cuprates. Finally, by introducing defects using proton irradiation, we obtain high J_c values in fields up to 25 T. We apply this method to other iron-based superconductors and achieve a similar enhancement of current densities.

铁基1111型超导体表现出高临界温度和相对高的临界电流密度J _c 。增加J _{c 的}典型方法是引入缺陷来控制耗散涡流运动。然而，经过优化后，理论上预测该方法的最大J _c仅为脱配对电流密度J _d的 30%，这取决于相干长度和穿透深度。在这里，我们使用热力学方法显着提高 SmFeAsO _{1– x} H _x薄膜中的J _c ，旨在增加J _d并结合涡旋钉扎中心。具体来说，我们通过使用 H 取代的高电子掺杂来增加载流子密度，从而减少穿透深度、相干长度和临界场各向异性。值得注意的是，四倍的J _d达到 415 MA cm ^–2 ，该值与铜酸盐相当。最后，通过使用质子辐照引入缺陷，我们在高达 25 T 的场中获得了高J _c值。我们将此方法应用于其他铁基超导体，并实现了类似的电流密度增强。