This work presents a complementary PMOS NMOS voltage-controlled power oscillator (VCO) based on a high quality (Q) factor off-chip inductor in 130 nm CMOS process. The proposed VCO achieves a frequency tuning range of 166% from 393 MHz to 4.17 GHz and this wide tuning range is divided into six bands where each band is also sub-divided into three bands using a single switching voltage. The proposed design takes into consideration the effect of the bond wire that is used to connect the off-chip inductor with the VCO core moreover, the measured SNP files of the off-chip inductors are utilized to ensure accurate results. This technique improves the figure of merit (FoM) by 4–25 dB compared to the conventional inductor VCO. Using six different values of the off-chip inductors, the proposed VCO works in six bands with a tuning range of 166%, and a minimum phase noise of − 127 dBc/Hz @ 1 MHz offset frequency 2.2 GHz carrier. Furthermore, the proposed VCO draws 1.37 mA from 1.1 V supply voltage and has a minimum achieved Figure-of-Merit (FOM) equal to -193 dBc/Hz with a maximum output power of 4.25 dBm. The VCO core area equals 0.07 \({\mathrm{mm}}^{2}\), while the total chip area including RF pads and output buffers is \({0.437\mathrm{ mm}}^{2}\).

这项工作提出了一种基于 130 nm CMOS 工艺的高质量 (Q) 因数片外电感器的互补 PMOS NMOS 压控功率振荡器 (VCO)。拟议的 VCO 实现了从 393 MHz 到 4.17 GHz 的 166% 的频率调谐范围，并且这个宽调谐范围分为六个频段，其中每个频段还使用单个开关电压细分为三个频段。所提出的设计考虑了用于连接片外电感器和 VCO 内核的键合线的影响，此外，利用片外电感器的测量 SNP 文件来确保准确的结果。与传统电感器 VCO 相比，该技术将品质因数 (FoM) 提高了 4–25 dB。使用六个不同值的片外电感器，建议的 VCO 在六个频段工作，调谐范围为 166%，最小相位噪声为 − 127 dBc/Hz @ 1 MHz 偏移频率 2.2 GHz 载波。此外，建议的 VCO 从 1.1 V 电源电压汲取 1.37 mA 的电流，并且实现的最小品质因数 (FOM) 等于 -193 dBc/Hz，最大输出功率为 4.25 dBm。VCO 核心面积等于 0.07 \({\mathrm{mm}}^{2}\)，而包括射频焊盘和输出缓冲器在内的总芯片面积为\({0.437\mathrm{ mm}}^{2}\)。