The effect of residual ceria slurry on a pad was investigated to improve the cleaning efficiency while maintaining the removal rate of chemical mechanical planarization (CMP). This combined process consists of two sequential steps: polishing with slurry, then polishing with residual slurry and cleaning with deionized water (DIW). Ceria slurry injected in the first step is used for polishing, while the rest of the ceria slurry remains in the groove or escapes out of the pad. When DIW is injected in the second step, the ceria slurry nanoparticles remaining on the pad participate in polishing, and DIW cleans the wafer surface, preventing contamination. The most efficient ceria injection time uses this two-step process, and the cleaning efficiency for this optimized time was confirmed. With optimal process conditions, particle area ratio decreased from 9.035% to 0.839%, indicating increased cleaning efficiency. This study suggests the time needed for the slurry to attain efficient polishing and demonstrates a method for shortening the ceria process time by simultaneously polishing and cleaning during the CMP process.

研究了残留的氧化铈浆料对垫的影响，以提高清洁效率，同时保持化学机械平坦化 (CMP) 的去除率。这种组合工艺包括两个连续的步骤：用浆料抛光，然后用残留的浆料抛光，再用去离子水 (DIW) 清洗。第一步注入的氧化铈浆料用于抛光，而其余的氧化铈浆料保留在凹槽中或从垫中逸出。当在第二步注入 DIW 时，残留在垫上的氧化铈浆料纳米颗粒参与抛光，DIW 清洁晶片表面，防止污染。最有效的氧化铈注入时间使用此两步过程，并且确认了此优化时间的清洁效率。在最佳工艺条件下，颗粒面积比从 9.035% 下降到 0.839%，表明清洁效率提高。这项研究表明了浆料达到有效抛光所需的时间，并展示了一种通过在 CMP 工艺过程中同时抛光和清洁来缩短氧化铈工艺时间的方法。