The Journal of Materials Science: Materials in Electronics was founded in 1990 and since then it has grown into a major peer-reviewed international journal. It publishes experimental papers on materials in modern electronics, optoelectronics and photonics, with a broad but in-depth coverage. The scope of the journal includes the synthesis, growth and processing of new materials (such as compounds and alloys), structural studies by various experimental techniques, characterization of microstructure, structure-property relationships, electrical, optical, dielectric and magnetic properties. The Journal accepts materials-related papers in newly developing fields such as low-dimensional structures and devices, spintronic materials and structures, topological insulators, energy applications (e.g. energy harvesting and storage, optoelectronics, solar cells, photocatalysis, green photonics), solid-state ionics, thermoelectrics and phononics, materials for heterogeneous integrated circuit applications, new materials for memory/storage applications, glasses, glass-ceramics and linear/non-linear crystal materials and lasers, high Tc superconductors, organic semiconductors, conducting polymers, thick-film materials and new contact technologies, as well as materials used in established electronic and optoelectronic devices and circuits. Materials related papers are also accepted in the emerging field of quantum technologies, including electronic/spintronic/photonic and related materials systems for quantum entanglement applications, plasmonic materials and sensors, communications and metrology. The papers should contain extensive and novel experimental work with rigorous analysis and sound interpretation. In all cases, the main focus of the paper must be materials related and experimental work. Theoretical and analytical papers, as well as those that contain a high degree of chemistry or electrochemistry are generally excluded from the scope. Papers that contain biological, medical, pharmaceutical, bacterial, blood-related works, even in a small section, are excluded from the scope and such papers will be returned. The journal also publishes comprehensive review articles within the scope of the journal from researchers; authors are expected to have a well-established research track record in the area of the review.

Research papers, commentaries, introductions, editorials, reports, errata, etc

Editor-in-Chief:
Safa Kasap
University of Saskatchewan, Canada
Founding Editor and Former Editor-in-Chief:
Arthur F. W. Willoughby
Southampton University, UK
Deputy Editors-in-Chief:
Jun Luo
Chinese Academy of Sciences, China
Patrick J. McNally
Dublin City University, Ireland
Editors:
Peter Capper
Selex ES, UK
Homero Castaneda-Lopez
Texas A&M University, USA
Kalyan Kumar Chattopadhyay
Javadpur University, India
I.M. Dharmadasa
Sheffield Hallam University, UK
Chris Groves
Durham University, UK
C. Robert Kao
National Taiwan University, Taiwan
Maurizio Martino
Università del Salento, Italy
Amlan J. Pal
Indian Association for the Cultivation of Science, India
Dong-Liang Peng
Xiamen University, China
Henry H. Radamson
Royal Institute of Technology, Sweden
Karthik Shankar
University of Alberta, Canada
Velumani Subramaniam
CINVESTAV, Mexico
Stephen Sweeney
University of Surrey, UK
Lydia H. Wong
Nanyang Technological University, Singapore
Wu Yan
China University of Geosciences (Wuhan), China
Ying Yang
Tsinghua University, China
Fu Rong Zhu
Hong Kong Baptist University, Hong Kong
Assistant Editor:
Chunzi Zhang
University of Saskatchewan, Canada
Editorial Board:
Sadao Adachi, Gunma University, Japan; Dan Allwood, University of Sheffield, UK; Hajime Asahi, Osaka University, Japan; Neil S. Beattie Northumbria University, UK; Bhaskar Bhattacharya,Banaras Hindu University, India;Rana Biswas, Ames Laboratory & Iowa State University, USA; David Bloor, Durham University, UK; Anna Paola Caricato,Università del Salento, Italy;Y.C. (Archie) Chan, City University of Hong Kong, China; Nandu Chaure, Savitribai Phule Pune University, India;Kunji Chen, Nanjing University, China; W. (Jim) Choyke, University of Pittsburgh, USA; Jan Evans-Freeman, University of Canterbury, New Zealand; Antonin Fejfar, Academy of Sciences of the Czech Republic, Czech Republic; Darrel Frear, Freescale Semiconductor, USA; Shubhra Gangopadhyay, University of Missouri-Columbia, USA; Christopher Gourlay, Imperial College London, UK; Jong Heo, Pohang University of Science and Technology, Korea; Dan Hewak, University of Southampton, UK; Oliver Ileperuma, Institute of Chemistry Ceylon, Sri Lanka; Alessia Irrera CNR- Institute for Chemical and Physical Processes (IPCF), Messina, Italy; Stuart J. C. Irvine, Swansea University, UK; Chennupati Jagadish, The Australian National University, Australia; David Jiles, Iowa State University, USA; Zahangir Kabir;Concordia University, Canada; Karen Kavanagh, Simon Fraser University, Canada; Iwan Kityk Czestochowa University of Technology, Poland; Chien-Neng Liao, National Tsing Hua University, Taiwan; Leszek Malkinski, University of New Orleans, USA; Budhika Mendis Durham University, UK; Maria Mitkova Boise State University, USA; Yashowanta Mohapatra, Indian Institute of Technology Kanpur, India; Hadis Morkoç, Virginia Commonwealth University, USA; Hiroyoshi Naito, Osaka Prefecture University, Japan; Hiroshi Nishikawa, Osaka University, Japan; Habib Pathan, Savitribai Phule Pune University, India;Kristin M. Poduska, Memorial University of Newfoundland, Canada; Adithya Prakash, Intersil, USA;Jatin RathIndian Institute of Technology, Madras, India; Alla ReznikLakehead University, Thunder Bay, Canada; Ben Ruck, Victoria University of Wellingon, New Zealand; Harry Ruda, University of Toronto, Canada; Arie Ruzin Tel Aviv University, Israel; Rene van Swaaij, Delft University of Technology, The Netherlands; Katsuhisa Tanaka, Kyoto University, Japan; Ayse Turak,McMaster University, Canada; Takashi Uchino, Kobe University, Japan; Neil White, University of Southampton, UK; Takayuki Yanagida, Nara Institute of Science and Technology, Japan; Alex (Ya Sha) Yi, University of Michigan, USA