个人简介
Professor. Baile Chen received his bachelor degree in physics from Department of Modern Physics in University of Science and Technology of China in Hefei, China, in 2007. He received his master degree in physics and Ph.D degree in electrical engineering both from University of Virginia, Charlottesville, VA, USA in 2009 and 2013, respectively. After he finished his PhD, he worked in the large multi-national RF company, Qorvo Inc (formerly Triquint Semiconductor), Hillsboro, Oregon, USA. As a result, he understood how a company is operating, right from business planning, product design to maufacturing. This helps Professor Chen work with industrial partners and do useful research. In Qorvo, he mainly focused on various RF power amplifiers and BAW filters in multi-band LTE wireless handset. In January, 2016, he joined in the School of Information Science and Technology in Shanghai Tech University as a tenure track assistant professor.
Education
PhD in Electrical Engineering, 2013 University of Virginia, Charlottesville, VA, USA
Master in Physics, 2009 University of Virginia, Charlottesville, VA, USA
BS in Physics, 2007 University of Science and Technology of China in Hefei, China
近期论文
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Kaimin Xu, Xiongbin Xiao, Wenjia Zhou, Xianyuan Jiang, Qi Wei, Hao Chen, Zhuo Deng, Jian Huang, Baile Chen, Zhijun, Ning*, “Inverted Si:PbS Colloidal Quantum Dots Heterojunction Based Infrared Photodetector”, ACS Applied Materials & Interfaces 2020, 12, 13, 15414-15421
Ningtao Zhang, Andrew Jones, Zhuo Deng, Baile Chen*, “Defect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy”, Optics Express 2020, 28(8): 11682-11691
Weihong Shen, Jiangbing Du*, Lin Sun, Chang Wang, Yuzhu Zhu, Ke Xu, Baile Chen, and Zuyuan He, “Low-Latency and High-Speed Hollow-Core Fiber Optical Interconnection at 2-Micron Waveband”, Accepted by IEEE Journal of Lightwave Technology
Yating Wan#*, Chen Shang#, Jian Huang#, Zhiyang Xie, Aditya Jain, Justin Norman, Baile Chen*, Arthur Gossard, John Bowers, “Low-dark current 1.55 micrometer InAs quantum dash waveguide photodiodes”，ACS Nano, 2020, 14(3): 3519-3527
Baile Chen*#, Yating Wan#, Zhiyang Xie, Jian Huang, Chen Shang, Justin Norman, Qiang Li, Yeyu Tong, Kei May Lau, Arthur C. Gossard, John E. Bowers, “Low dark current high gain InAs quantum dot avalanche photodetectors monolithically grown on Si”, ACS Photonics 2020 7(2), 528-533
Xiujun Hao, Yan Teng, Yu Zhao, Qihua Wu, Xin Li, Jiafeng Liu, Ying Chen, He Zhu, Baile Chen, Zhuo Deng, Jian Huang, Yong Huang* and Hui Yang, “Demonstration of a dual-band InAs/GaSb type-II superlattice infrared detector based on a single heterojunction diode”, IEEE Journal of Quantum Electronics, VOL. 56, NO. 2, 4300106, APRIL 2020
Liqi Zhu, Jian Huang, Zongheng Xie, Zhuo Deng, Lu Chen, Chun Lin, and Baile Chen*, “Low frequency noise spectroscopy characterization of HgCdTe infrared detectors”, IEEE Transactions on Electron Devices, VOL. 67, NO. 2, 547-551, FEBRUARY 2020
Yaojiang Chen#, Xuliang Chai#, Zhiyang Xie, Zhuo Deng, Ningtao Zhang, Yi Zhou*, Zhicheng Xu, Jianxin Chen, Baile Chen*, “High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice”, IEEE Journal of Lightwave Technology, VOL. 38, Issue 4, 939-945, FEBRUARY 2020
Yaojiang Chen, Zhiyang Xie, Jian Huang, Zhuo Deng, Baile Chen*, “High-speed uni-traveling carrier photodiode for 2 μm wavelength application”, Optica, 2019 6(7), 884-889
Jian Huang#, Yating Wan#, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen*, “Defect Characterization of InAs/InGaAs Quantum Dot p‐i‐n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate”, ACS Photonics, 2019 6 (5), 1100-1105
Zhuo Deng#, Daqian Guo#, Jian Huang, Huiyun Liu, Jiang Wu*, Baile Chen*, “Mid-wave infrared InAs/GaSb type-II superlattice photodetector with p-i-B-n deisgn grown on GaAs substrate “, IEEE Journal of Quantum Electronics, 55(4), 4000205, AUGUST 2019
Jian Huang, Baile Chen*, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, and Jun Shao, “ Deep levels analysis in wavelength extended InGaAsBi photodetector”, Semiconductor Science and Technology, 34 (2019) 095018 (7pp)
Xiujun Hao, Yu Zhao, Qihua Wu, Xin Li, Yan Teng, Min Xiong, Yong Huang*, Baile Chen, and Hui Yang, “InAs/GaSb superlattice photodetector with cutoff wavelength around 12 μm based on an Al-free nBn structure grown by MOCVD”, Semiconductor Science and Technology, 34(6), 065013
Zhiyang Xie, Yaojiang Chen, Ningtao Zhang, and Baile Chen*, “InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength”, IEEE Photonics Technology Letters 31 (16), 1331-1334, 2019
Zhuo Deng#, Daqian Guo#, Claudia González Burguete, Jian Huang, Zongheng Xie, Huiyun Liu, Jiang Wu*, and Baile Chen*, “ Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector “, Infrared Physics & Technology 101, 133-137, 2019
Yaojiang Chen, Baile Chen*, “Design of InP Based High Speed Photodiode for 2 μm Wavelength Application”, IEEE Journal of Quantum Electronics, Vol 55, No 1, pp. 1-8, 2019
Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, Baile Chen*, “Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes”, Optics Express, Vol. 26, Issue 26, pp. 35034-35045 (2018)
Jian Huang#, Daqian Guo#, Zhuo Deng, Wei Chen, Huiyun Liu, Jiang Wu*, and Baile Chen*, “Mid-wave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, pp. 4033-4038, VOL. 36, NO. 18, SEPTEMBER 15, 2018
Wei Chen#, Zhuo Deng#, Daqian Guo, Yaojiang Chen, Yuriy Mazur, Yurii Maidaniuk, Mourad Benamara, Gregory J Salamo, Huiyun Liu, Jiang Wu*, Baile Chen*, “Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate”, IEEE Journal of Lightwave Technology, Vol 36, No 12, pp. 2572-2581, 2018
Zhuo Deng, Baile Chen*, Xiren Chen, Jun Shao*, Qian Gong, Huiyun Liu, Jiang Wu*, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate”, Infrared Physics & Technology, Volume 90, Pages 115–121, 2018
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