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Book:ShileiZhang,ChiralandTopologicalNatureofMagneticSkyrmions,Springer,ISBN978-3-319-98252-6(2018).
24.D.M.Burn,S.L.Zhang,S.Wang,H.F.Du,G.vanderLaan&T.Hesjedal,HelicalMagneticOrderinginThinFeGeMembranes,Phys.Rev.B100,184403(2019).
23.J.X.Zhang,X.C.Cai,W.Xia,A.J.Liang,J.W.Huang,C.W.Wang,L.X.Yang,H.T.Yuan,Y.L.Chen,S.L.Zhang,Y.F.Guo,Z.K.Liu,&G.Li,UnveilingElectronicCorrelationandtheFerromagneticSuperexchangeMechanisminthevanderWaalsCrystalCrSiTe3,Phys.Rev.Lett.123,047203(2019).
22.W.J.Li,I.Bykova,S.L.Zhang,G.Q.Yu,R.Tomasello,M.Carpentieri,Y.Z.Liu,Y.Guang,J.Gräfe,M.Weigand,D.M.Burn,G.vanderLaan,T.Hesjedal,Z.R.Yan,J.F.Feng,C.H.Wan,J.W.Wei,X.Wang,X.M.Zhang,H.J.Xu,C.Y.Guo,H.X.Wei,G.Finocchio,X.F.Han&G.Schütz,AnatomyofSkyrmionicTexturesinMagneticMultilayers,Adv.Mater.31,1807683(2019).
21.X.Y.Li,S.L.Zhang,H.Li,D.A.Venero,J.S.White,R.Cubitt,Q.Z.Huang,J.Chen,L.H.He,G.vanderLaan,W.H.Wang,T.Hesjedal&F.W.Wang,Oriented3DMagneticBiskyrmionsinMnNiGaBulkCrystals,Adv.Mater.31,1900264(2019).
20.D.M.Burn,L.B.Duffy,R.Fujita,S.L.Zhang,A.I.Figueroa,J.Herrero-Martin,G.vanderLaan&T.Hesjedal,Cr2Te3thinFilmsforIntegrationinMagnetictopologicalInsulatorHeterostructures,Sci.Rep.9,10793(2019).
19.S.L.Zhang,G.vanderLaan,J.Müller,L.Heinen,M.Garst,A.Bauer,H.Berger,C.Pfleiderer,&T.Hesjedal,Reciprocalspacetomographyof3Dskyrmionlatticeorderinachiralmagnet,Proc.Natl.Acad.Sci.115,6386(2018).
18.S.L.Zhang,G.vanderLaan,W.W.Wang,A.A.Haghighirad&T.Hesjedal,DirectObservationofTwistedSurfaceSkyrmionsinBulkCrystals,Phys.Rev.Lett.120,227202(2018).
17.S.L.Zhang,W.W.Wang,D.M.Burn,H.Peng,H.Berger,A.Bauer,C.Pfleiderer,G.vanderLaan,&T.Hesjedal,ManipulationofSkyrmionMotionbyMagneticFieldGradients,Nat.Commun.9,2115(2018).
16.S.L.Zhang,F.Kronast,G.vanderLaan,&T.Hesjedal,Real-SpaceObservationofSkyrmioniuminaFerromagnet-MagneticTopologicalInsulatorHeterostructure,NanoLett.18,1057(2018).
15.S.L.Zhang,G.vanderLaan,&T.Hesjedal.Directexperimentaldeterminationofspiralspinstructuresviathedichroismextinctioneffectinresonantelasticsoftx-rayscattering.Phys.Rev.B96,094401(2017).
14.S.L.Zhang,G.vanderLaan,&T.Hesjedal.DirectexperimentaldeterminationofthetopologicalwindingnumberofskyrmionsinCu2OSeO3.Nat.Commun.8,14619(2017).
13.S.L.Zhang,I.Stasinopoulos,T.Lancaster,F.Xiao,A.Bauer,F.Rucker,A.A.Baker,A.I.Figueroa,Z.Salman,F.L.Pratt,S.J.Blundell,T.Prokscha,A.Suter,J.Waizner,M.Garst,D.Grundler,G.vanderLaan,C.Pfleiderer&T.Hesjedal.Room-temperaturehelimagnetisminFeGethinfilms.Sci.Rep.7,123(2017).
12.S.L.Zhang,A.Bauer,H.Berger,C.Pfleiderer,G.vanderLaan,&T.Hesjedal.ImagingandmanipulationofskyrmionlatticedomainsinCu2OSeO3.Appl.Phys.Lett.109,192406(2016).
11.S.L.Zhang,A.Bauer,H.Berger,C.Pfleiderer,G.vanderLaan,&T.Hesjedal.Resonantelasticx-rayscatteringfromtheskyrmionlatticeinCu2OSeO3.Phys.Rev.B93,214420(2016).
10.S.L.Zhang,A.Bauer,D.M.Burn,P.Milde,E.Neuber,L.M.Eng,H.Berger,C.Pfleiderer,G.vanderLaan,&T.Hesjedal.MultidomainSkyrmionLatticeStateinCu2OSeO3.NanoLett.16,3285(2016).
9.S.L.Zhang&T.Hesjedal.Themagneto-HalldifferenceandtheplanarextraordinaryHallbalance.AIPAdv.6,045019(2016).
8.S.L.Zhang,R.Chalasani,A.A.Baker,N.J.Steinke,A.I.Figueroa,A.Kohn,G.vanderLaan,&T.Hesjedal.EngineeringhelimagnetisminMnSithinfilms.AIPAdv.6,015217(2016).
7.S.L.Zhang,A.A.Baker,S.Komineas,&T.Hesjedal.Topologicalcomputationbasedondirectmagneticlogiccommunication.Sci.Rep.5,15773(2015).
6.S.L.Zhang,A.A.Baker,J.Y.Zhang,G.H.Yu,S.G.Wang,&T.Hesjedal.UniversalMagneticHallCircuitBasedonPairedSpinHeterostructures.Adv.Electron.Mater.1,1400054(2015).
5.S.L.Zhang,J.Y.Zhang,A.A.Baker,S.G.Wang,G.H.Yu&T.Hesjedal.Threedimensionalmagneticabacusmemory.Sci.Rep.4,6109(2014).
4.S.L.Zhang,L.J.Collins-McIntyre,J.Y.Zhang,S.G.Wang,G.H.Yu&T.HesjedalNonvolatilefulladderbasedonasinglemultivaluedHalljunction.SPIN3,1350008(2013).
3.S.L.Zhang,Y.Liu,L.J.Collins-McIntyre,T.Hesjedal,J.Y.Zhang,S.G.Wang&G.H.Yu.ExtraordinaryHallbalance.Sci.Rep.3,2087(2013).
2.S.L.Zhang,J.Teng,J.Y.Zhang,Y.Liu,J.W.Li,G.H.Yu&S.G.Wang.LargeenhancementoftheanomalousHalleffectinCo/PtmultilayerssandwichedbyMgOlayers.Appl.Phys.Lett.97,222504(2010).
1.S.L.Zhang,J.Teng&G.H.Yu.AmethodforfabricatingmaterialswithultrahighanomalousHalleffectsensitivity.ChineseNationalPatentNo.201010500518.3(2010)