Chen, Hanghui - 上海纽约大学 - 物理联合研究中心

个人简介

Hanghui Chen is an Assistant Professor of Physics at NYU Shanghai. Prior to joining NYU Shanghai, he was a post-doctoral fellow at Columbia University. He holds a Ph.D. from Yale University and a B.S. from Peking University. Ph.D., Physics, Yale University, 2012 B.S., Physics, Peking University, 2004

研究领域

Professor Chen’s research interests include first-principles modelling and design of complex meta-materials, in particular transition metal oxide heterostructures; ab initio calculations of ground state and excited state properties of correlated systems; as well as method development in materials theory. His work has appeared in Phys. Rev. Lett., Nano Lett. and Advanced Materials.

近期论文

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H. Chen, D. P. Kumah, A. S. Disa, F. J. Walker, C. H. Ahn, S. Ismail-Beigi, “Modifying the electronic orbitals of nickelate heterostructures via structural distortions”, Phys. Rev. Lett. 110, 186402 (2013) H. Chen, A. J. Millis, and C. A. Marianetti, “Engineering Correlation Effects via Artificially Designed Oxide Superlattices”, Phys. Rev. Lett. 111,116403 (2013) H. Chen, Q. Qiao, M. S. J. Marshall, A. B. Georgescu, A. Gulec, P. J. Phillips, R. F. Klie, F. J. Walker, C. H. Ahn and S. Ismail-Beigi, “Reversible modulation of orbital occupations via an interface-induced polar state in metallic manganites”, Nano Lett. 14, 4965 (2014). A. S. Disa, D. P. Kumah, A. Malashevich, H. Chen, D. A. Arena, E. D. Specht, S. Ismail-Beigi, F. J. Walker and C. H. Ahn, “Inter-elemental orbital tuning in oxides”, Phys. Rev. Lett. 114, 026801 (2015).