田媛 - 太原理工大学 - 物理与光电工程学院

个人简介

2016/09-至今太原理工大学，物理与光电工程学院，讲师 2011/09-2016/06山东大学晶体材料国家重点实验室，硕博连读 2007/09-2011/06河北工业大学材料科学与工程学院，本科

研究领域

宽禁带半导体材料具有带隙宽、饱和电子速率高、击穿电压大、导热性能好、抗辐照能力高等优点，被广泛应用于白光LED、短波长激光器、紫外探测器、高温大功率器件以及太空空间用电子器件，具有很大的研究价值和应用前景。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

（1）Yuan Tian, Lei Zhang, Yongzhong Wu , Yongliang Shao, Yuanbin Dai, Haodong Zhang, Rusheng Wei &XiaopengHao. Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method.Crystengcomm,16(11), 2317, (2014). （2）Yuan Tian, Yongliang Shao, Yongzhong Wu, XiaopengHao, Lei Zhang, Yuanbin Dai & Qin Huo, Direct growth of freestanding GaN on C-face SiC by HVPE.Scientific Reports,5, 10748, (2015). （3） Lei Zhang, Xianlei Li, Yongliang Shao, Jiaoxian Yu, Yongzhong Wu, XiaopengHao, Zhengmao Yin, Yuanbin Dai, Yuan Tian, Qin Huo, YinanShen, ZhengHua&Baoguo Zhang. Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate..Acs Appl. Mater. Interfaces,7, 4504, (2015). （4） Lei Zhang, Jiaoxian Yu, XiaopengHao, Yongzhong Wu, Yuanbin Dai, Yongliang Shao, Haodong Zhang & Yuan Tian, Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate.Scientific reports,4, 4179, (2014). （5） Yongliang Shao, Lei Zhang, XiaopengHao, Yongzhong Wu, Yuanbin Dai, Yuan Tian& Qin Huo, Large Area Stress Distribution in Crystalline Materials Calculated from Lattice Deformation Identified by Electron Backscatter Diffraction.Scientific reports,4, 5934, (2014). （6） Lei Zhang, Yuanbin Dai, Yongzhong Wu, Yongliang Shao, Yuan Tian, Qin Huo, XiaopengHao, YinanShen& Zhen Hua, Epitaxial growth of a self-separated GaN crystal by using a novel high temperature annealing porous template.CrystEngComm,16(38), 9063, (2014). （7） Yongliang Shao, Yuanbin Dai, XiaopengHao, Yongzhong Wu, Lei Zhang, Haodong Zhang & Yuan Tian, EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxyGaN grown on patterned substrate.CrystEngComm,15(39), 7965, (2013). （8） Haodong Zhang, Yongliang Shao, Lei Zhang, XiaopengHao, Yongzhong Wu, Xiaoyan Liu, Yuanbin Dai & Yuan Tian, Growth of high quality GaN on a novel designed bonding-thinned template by HVPE.CrystEngComm,14(14), 4777 (2012). （9）Yuanbin Dai, Yongzhong Wu, Lei Zhang, Yongliang Shao, Yuan Tian, Qin Huo, Peng Zhang, Xingzhong Cao &XiaopengHao, A novel porous substrate for the growth of high quality GaN crystals by HVPE.RSC Advances,4(66), 35106, (2014). （10） Yuanbin Dai, Yongliang Shao, Yongzhong Wu, XiaopengHao, Peng Zhang, Xingzhong Cao, Lei Zhang, Yuan Tian&Haodong Zhang, Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy.RSC Advances,4(41), 21504, (2014). （11） Hongyun Li, Lei zhang, Yongliang Shao, Yongzhong Wu, XiaopengHao, Yuanbin Dai &Yuan Tian, Simulation and Growth Study of V/III Ratio Effects on HVPE Grown GaN.Int. J. Electrochem. Sci,8, 4110, (2013).