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1. X. J. Zhou, Z. Gu, S. L.Ban, Z. P. Wang, Electronic mobility limited by optical phonons in Al2O3/AlGaN/GaN double heterojunctions
Journal of Applied Physics, 120, 125706-1-5(2016.09)
2. P. Liu, Z. H..Yuan, H.Wu, S. S. Ali，C. H. Wan, S. L. .Ban, Nonlocal ordinary magnetoresistance in indium arsenide Journal of Magnetism and Magnetic Materials，385,292-294（2015.3）
3. Wen-Hao Liu, S. Yang, H.M. Feng, L. Yang, Y. Qu*, S. L. Ban, Effects of ternary mixed crystal and size on intersubband optical absorption in wurtzite InGaN/GaN core-shell nanowires Superlattices and Microstructures，83，521–529 (2015.4)
4. Z. Y. Feng*, S. L. Ban, J. Zhu, Binding energies of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions with finitely thick potential barriers, Chin. Phys. B 23(6) 066801-1~6 (2014.06)
5. 谷卓，班士良*，纤锌矿ZnO/MgxZn1-xO量子阱中带间光吸收的尺寸和三元混晶效应,物理学报, 63(10), 107301~1-6(2014.05)
6. J. Li, J. Y. Guan, S. F. Zhang, S. L. Ban, Y. Qu*，Effects of ternary mixed crystal and size on optical phonons in wurtzite nitride core-shell nanowires, J. Appl. Phys. 115, 154305~1-8 (2014.04)
7. 屈媛, 宗易昕, 马健, 李冬雪, 班士良*，体横光学声子双模性对纤锌矿AlxGa1-xN量子阱中光学声子的影响,中国科学: 物理学 力学 天文学，44（2），150-161（2014.01）
8. F. J. Yang, S. L. Ban, Acoustic phonon scattering on the two dimensional electron gas in wurtzite AlxGa1-xN/GaN/AlyGa1-yN double heterostructures, Solid State Communications 161，5–8 (2013)
9. J. Zhu , S. L. Ban, S. H. Ha, A simulation of intersubband absorption in ZnO/MgxZn1-xO quantum wells with an external electric field, Superlattices and Microstructures，56,92-98（2013.03）
10. J. Zhu, S. L. Ban, S. H. Ha，Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells,Chinese Physics B, 21(9), 097301-1~6(2012.09)
11. J. G. Zhu and S. L. Ban, Effect of electron-optical phonon interaction on resonant tunneling in coupled quantum wells, Eur. Phys. J. B, 85，140-1~6（2012.04）
12. 杨福军, 班士良, 纤锌矿AlGaN/AlN/GaN异质结构中光学声子散射影响的电子迁移率, 物理学报，61（8），087201-1~11（2012.04）
13. 朱金广, 班士良, 三元混晶双势垒结构中光学声子辅助共振隧穿及压力效应, 中国科学：物理学 力学 天文学, 42（4），369-376（2012.4）
14. J. Zhu, S. L. Ban, S. H. Ha，Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN quantum wells, Eur. Phys. J. B, 85(2)67-1~6（2012.2）
15. J. Zhu, S. L. Ban, S. H. Ha, Intersubband absorption in strained AlxGa1-xN/GaN quantum wells with InyGa1-yN nanogroove layers, Superlattices and Microstructures, 51（4），471-479，（2012.4）
16. S. H. Ha, S. L. Ban, J. Zhu, Intersubband absorption in strained AlGaN/GaN double quantum wells, Physica B, 406, 3640-3645(2011.10)
17. Y. Qu and S. L. Ban，Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-xN nanogroove, J. Appl. Phys. 110, 013722-1~7(2011.7)
18. S. H. Ha，S. L. Ban and J. Zhu，Screened excitons in strained wurtzite AlxGa1−xN/GaN/AlyGa1−yN quantum wells， Phys. Status. Solidi C, 8（1）34-37(2011.1)
19. J. Zhu, S. L. Ban, and S. H. Ha, Binding Energies of Excitons in Strained [0001]-oriented Wurtzite AlGaN/GaN double quantum wells, Phys. Status. Solidi B, 248（2），384-388(2011.2)
20. 屈媛, 班士良，纤锌矿氮化物量子阱中光学声子模的三元混晶效应,物理学报，59（7），4864-4873(2010.07)
21. M. Zhang and S.L. Ban, Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions, Chinese Physics B, 18(12), 5437-5442(2009.12)
22. M. Zhang and S.L. Ban, Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction, Chinese Physics B, 18(10), 4449-4455(2009.10)
23. Y. Qu and S. L. Ban,Electron mobility in wurtzite nitride quantum wells limited by optical-phonons and its pressure effect, Eur. Phys. J. B 69,321-329(2009.6)
24. G. J. Zhao, X.. X. Liang and S. L. Ban, Polaron effect on the binding energies of excitons in quantum wells under hydrostatic pressure, Physica Status Solidi C, 6(1), 185-188 (2009)
25. X. P. Bai and S. L. Ban, Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdxSe strained heterojunction，Chinese Physics, 17(12), 4606-4613(2008.12)
26. J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted magneto tunneling in a parabolic quantum well with double barriers, Physica E, 40(8), 2664-2670(2008)
27. S. H. Ha and S. L. Ban，Binding energies of excitons in a strained wurtzite GaN/AlGaN quantum well influenced by screening and hydrostatic pressure, J. Phys.: Condens. Matter, 20, 085218 (7 Pages) (2008.02)
28. X. M. Jia and S. L. Ban, Optical phonon influence on the mobility of electrons in wurtzite and zincblende AlN/GaN quantum wells, J. Physics: Conference Series, 92, 012065 (4 Pages) (2007.12)
29. G. D. Hao, S. L. Ban and X. M. Jia, Pressure effect on the mobility of electrons in AlAs/GaAs quantum wells, Chinese Physics, 16(12), 3766-3771(2007.12)
30. J. Gong, X. X. Liang and S. L. Ban, Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure, J. Appl. Phys. ,102(7), 073718, Page1-6(2007.10)
31. X. P. Bai and S. L. Ban, Electron mobility in a realistic AlxGa1-xAs/GaAs heterojunction potential under pressure, Eur. Phys. J., B 58, 31-36 (2007.08)
32. G. J. Zhao, X.. X. Liang and S. L. Ban, Effect of hydrostatic pressure on the binding energies of excitons in quantum wells, International Journal of Modern Physics B ,21(16), 2735-2747(2007.07)
33. J. Gong, X. X. Liang, and S. L. Ban, Tunneling time of electronic wave packet through a parabolic quantum well with double barriers, Phys. Status Solidi (b), 244(6), 2064-2071(2007.06)
34. S. H. Ha and S. L. Ban, Screening influence on the binding energies of excitons in quantum wells under pressure, AIP Conference Proceedings, 893, 273-274 (2007.06)
35. Z. W. Yan, S. L. Ban and X. X. Liang, Polaron properties in ternary group-III nitride mixed crystals, AIP Conf. Proc. ,850,1546-1547,Part.A-B(2006)
36. X. L.Yu, S.L.Ban, Cyclotron resonance of a polaron in a realistic heterojunction and its pressure effect, Eur. Phys. J. B ,52(4), 483-491(2006.08)
37. J. Gong, X. X. Liang and S. L. Ban, Confined LO-phonon-assisted tunneling in a parabolic quantum well with double barriers, J. Appl. Phys.,100（2）, 023707, Pages.1-6，（2006.7)
38. Z. Z. Guo, X. X. Liang and S. L. Ban, Interface excitons in a type-Ⅱ ZnSe/ZnTe heterojunction under hydrostatic pressure: the triangle potential well approximation, Physica Scripta, 73（2），137-142（2006.2）
39. Z. W. Yan, X. X. Liang and S. L. Ban, Intermediate-coupling poltarons in GaN, AlN, and InN, AIP Conference Proceedings, 772, 233-234 (2005)
40. S. L. Ban and S. T. Wang, Magnetic field effect on bound polarons in semiconductor heterojunctions under pressure, AIP Conference Proceedings, 772, 391-392 (2005)
41. J. Gong, X. X. Liang and S. L. Ban, Resonant tunneling in parabolic quantum well structures under a uniform transverse magnetic field, Chinese Physics, 14(1), 201-207(2005)
42. Z. W. Yan, S. L. Ban and X. X. Liang, Intermediate-coupling polaron properties in wurtzite nitride semiconductors, Physics Letters A,326,157-165(2004)
43. X. X. Liang and S. L. Ban, Optical vibration modes and electron-phonon interaction in ternary mixed crystals of polar semiconductors,Chinese Physics,13(1),71-81( 2004.01)
44. Z. W. Yan, S. L. Ban and X. X. Liang, Pressure dependence of electron- IO- phonon interaction in multi-interface heterostructure systems, Int. J. of Modern Physics B, 17(31&32), 6085-6096 (2003. 03)
45. Z. W. Yan, S. L. Ban and X. X. Liang, Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure, Eur. Phys. J. B 35, 41-47(2003)
46. G. J. Zhao, X. X. Liang and S. L. Ban, Binding energies of donors in quantum wells under hydrostatic pressure, Physics Letters A 319,191-197(2003)
47. Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure effect on the interface excitons in a type-Ⅱ ZnTe/CdSe heterojunction, Modern Phys. Lett. B,17 (27-28), 1425-1435 (2003)
48. F. Q. Zhao, X. X. Liang and S. L. Ban, Influence of the spatially dependent effective mass on bound polarons in finite parabolic quantum wells, Eur. Phys. J.B 33(1),3-8(2003)
49. Y. L. Cao, S. L. Ban and G. J. Zhao, The effect of Hydrostatic pressure on bound polarons in polar semiconductor heterojunctions, Modern Physics Letters B, 17(17), 909-919 (2003)
50. G. J. Zhao, X. X. Liang and S. L. Ban, Binding energies of excitons in GaAs/AlAs quantum wells under pressure, Modern Physics Letters B, 17(16), 863-870(2003)
51. Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure-induced increase of exciton-LO-phonon coupling in a Zn1-xCdxSe/ZnSe quantum well, Phys. Stat. Sol (b)238, 173-179 (2003)
52. Z. Z. Guo, X. X. Liang and S. L. Ban, Pressure tuning of strains in Zn1-xCdxSe/ZnSe (x<0.1) single quantum wells, Phys. Lett. A, 306, 160-165(2002)
53. J. Gong, S. L. Ban and X. X. Liang, Resonant tunneling in semiconductor multibarrier heterostructures, Int. J. of Modern Physics B, 16(30), 4607-4619 (2002)
54. X. X. Liang and S. L. Ban, Note to electron-phonon interaction in polar ternary mixed crystals, Journal of Luminescence 94-95, 781-785(2001)
55. F. Q. Zhao, X. X. Liang and S. L. Ban, Energy levels of a polaron in a finite parabolic quantum well, I.J.M.Phys B 15(5),527-535 (2001)
56. Z. W. Yan, X. X. Liang and S. L. Ban, IO-phonon-assisted tunneling in asymmetric double-barrier structures, Phys Rev B64(12),125321(2001)
57. 41、X. X. Liang, Z .P. Wang and S. L. Ban, Bound polarons in ternary mixed crystals, Journal of Luminescence, 87-89,614-616(2000)
58. S. L. Ban, J. E. Hasbun and X.X. Liang, A novel method for quantum transmission across arbitrary potential barriers, Journal of Luminescence, 87-89,369-371(2000)
59. S. L. Ban and J. E. Hasbun, Bound polarons in a polar semiconductor heterojunction, Phys. Rev. B 59,3,2276-2283(1999)
60. S. L. Ban and J.E.Hasbun, Donor level in a quasi- two dimensional heterojunction system, Solid State Commun. ,109,93-98(1999)
61. S. L. Ban and J. E. Hasbun, Interface polarons in a realistic heterojunction potential, Eur. Phys. J B8,453-461(1999)
62. J. E. Hasbun and S. L. Ban, Optical-phonon scattering in quasi-two-dimensional heterojunction systems, Phys. Rev., B58( 4), 2102(1998)
63. S. L. Ban and X. X. Liang, Interface polarons in a heterojunction with triangular bending-band, Eur. Phys. J., B5, 153-158(1998)
64. X. X. Liang, S. L. Ban and R. S. Zheng, Effect of optical phonons on the binding energy of an exciton in a quantum well, J. Luminescence, 72-74, 358(1997)
65. S. L. Ban, X. X. Liang and R. S. Zheng, Cyclotron resonance of two-dimensional interface polarons, Phys. Rev. B51,2351(1995)
66. G. H. Yun, J. H. Yan, S. L. Ban and X. X. Liang, Properties of perfect confined modes and interface modes of spin- waves in a ferromagnetic bilayer system, Surf. Sci. ,318,177(1994)
67. S. L. Ban, X. X. Liang and R. S. Zheng, Influence of interface phonons on a polaron near a polar semiconductive heterointerface, Phys. Lett A, 192, 110(1994)
68. R. S. Zheng, S. L. Ban and X. X. Liang, Polaronic effect on the electron energy spectrum in a quantum well, J Phys. CM6,10307(1994)
69. R. S. Zheng, S. L. Ban and X. X. Liang, Effect of the interface and bulk optical phonons on the polarons in a quantum well, Phys. Rev. B49,1796(1994)
70. S. L. Ban, R. S. Zheng, X. M. Meng and L. Y. Zhao, Temperature dependence of the N-dimensional polaron, J Phys. CM5,6055(1993)
71. G. H. Yun, J. H. Yan and S. L. Ban, Interface-rescaling approach to the exact solutions of quantum low -energy for a ferromagnetic bilayer system, Phys. Rev.B46, 18, 12045(1992)
S. W. Gu and S. L. Ban, The ground state effective Hamiltonian of the strong coupling One- dimensional optical exciton, Phys. Stat. Sol.(b), 122, K41(1984)
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