个人简介
王中强，凝聚态物理专业博士，教授，博士生导师。2013年毕业于于东北师范大学，获得凝聚态物理博士学位。2014年至2016年在意大利米兰理工大学进行博士后研究。
教育及工作经历：
2004.09-2008.07 东北师范大学物理学院,物理学,学士
2008.09-2013.06 东北师范大学物理学院,凝聚态物理，博士，导师:刘益春/徐海阳
2013.08-2016.04 东北师范大学，物理学院，讲师
2014.02-2016.02 意大利米兰理工大学,生物工程与电子信息系,博士后，合作导师：Daniele Ielmini
2016.07-2019.06 东北师范大学，物理学院，副教授
2019.06-至今 东北师范大学，物理学院，教授
研究领域
科研方向：
阻变式信息存储器件
忆阻器神经突触仿生研究
近期论文
查看导师最新文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
(1) Yanyun Ren，Hanlu Ma，Wei Wang，Zhongqiang Wang,* Haiyang Xu,* Xiaoning Zhao，Weizhen Liu，Jiangang Ma，and Yichun Liu，Cycling-induced Degradation of Organic–Inorganic Perovskite-based Resistive Switching Memory，Advanced Materials Technologies， 2019，4，1800238 (扉页文章).
(2) Jiaqi Xu，Xiaoning Zhao*，Zhongqiang Wang，Haiyang Xu*，Junli Hu，Jiangang Ma，and Yichun Liu，Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics，Small. 2019，15，1970025.
(3) Ya Lin，Cong Wang，Yanyun Ren，Zhongqiang Wang*，Haiyang Xu*，Xiaoning Zhao，Jiangang Ma，and Yichun Liu，Analog–Digital Hybrid Memristive Devices for Image Pattern Recognition with Tunable Learning Accuracy and Speed，Small Methods. 2019，1900160.
(4) Xiaoning Zhao，Zhongqiang Wang*，Ya Lin，Haiyang Xu*，and Yichun Liu，Resistive switching performance improvement of amorphous carbon-based electrochemical metallization memory via current stressing，Appl. Phys. Lett. 2019，115，073501.
(5) Wei Wang，Jiaqi Xu，Hanlu Ma，Xiaoning Zhao*，Ya Lin*，Cen Zhang，Zhongqiang Wang，Haiyang Xu，and Yichun Liu，Insertion of Nanoscale AgInSbTe layer between the Ag electrode and the CH3NH3PbI3 electrolyte layer enabling enhanced multilevel memory，ACS Appl. Nano Mater，2019，2，307.
(1) Meng Qi，Liang Bai，Haiyang Xu，* Zhongqiang Wang,* Zhenhui Kang，Xiaoning Zhao，Weizhen Liu，Jiangang Ma and Yichun Liu，Oxidized carbon quantum dots-graphene oxide nanocomposites for improving data retention of resistive switching memory，J. Mater. Chem.C，2018，2018，6，2026
(2) Yanyun Ren，Valerio Milo，Zhongqiang Wang*，Haiyang Xu*，Daniele Ielmini*，Xiaoning Zhao,Yichun Liu，Analytical modeling of organic?inorganic CH?NH?PbI? perovskite resistive switching and its application for neuromorphic recognition， Adv. Theory Simul. 2018，1，1700035 （正封面文章）
(3) Ye Tao，Wentao，Ding， Zhongqiang Wang*，Haiyang Xu*，Xiaoning Zhao，Xuhong Li，Weizhen Liu，Jiangang Ma，Yichun Liu Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer，Applied Surface Science，2018，440，Pages 107-112
(4) Kaixi Shi，Zhongqiang Wang(共同一作)，Haiyang Xu*，Zhe Xu，Xiaohan Zhang，Xiaoning Zhao，Weizhen Liu，Guochun Yang，Yichun Liu，Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device，IEEE Electron Device Letters，39，4，488 - 491，2018
(5) Ye Tao，Xuhong Li，Haiyang Xu*，Zhongqiang Wang*，Wentao Ding，Weizhen Liu，Jiangang Ma and Yichun Liu，Improved uniformity and endurance through supression of filiament overgrowth in electrochemical metallization memory with AgInSbTe buffer layer，IEEE Journal of the Electron Devices Society，2018,6(1),714-720.
(6) Xiaoning Zhao，Zeying Fan，Haiyang Xu,* Zhongqiang Wang,* Jiangang Ma，Yichun Liu，Reversible Alternation between Bipolar and Unipolar Resistive Switching in Ag/MoS2/Au Structure for Multilevel Flexible Memory，Journal of Materials Chemistry C，2018. 6，7195-7200(热点文章，内封面)
(7) Xiaoning Zhao，Zhongqiang Wang (共同一作)，Yu Xie，Haiyang Xu,* Jiaxue Zhu，Xintong Zhang，Weizhen Liu，Guochun Yang，Jiangang Ma，Yichun Liu*，Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive Switching Memory Behaviors，SMALL，2018，14,18013125 (封面文章)
（8）Hanlu Ma，Wei Wang,Haiyang Xu*，Zhongqiang Wang*，Ye Tao，Peng Chen，Weizhen Liu，Xintong Zhang，Jiangang Ma and Yichun Liu，Interface-state Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory，ACS Applied Materials & Interfaces,2018,10，25，21755-21763
（9）Meng Qi，YeTao，ZhongqiangWang*，HaiyangXu*，XiaoningZhao，WeizhenLiu，JiangangMa，YichunLiu，Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage，Applied Surface Science，458，15(2018)，Pages 216-221
（10）Wentao Ding,Ye Tao，Xuhong Li，Ya Lin,Zhongqiang Wang*,Haiyang Xu*，Xiaoning Zhao,Weizhen Liu， Jiangang Ma ,Yichun Liu，Graphite microislands Prepared for Reliability Improvement of Amorphous Carbon Based resistive switching memory，Phys. Status Solidi RRL 2018，1800285
（11）Ya Lin，Tao Zeng，Haiyang Xu*，Zhongqiang Wang*，Xiaoning Zhao，Weizhen Liu，Jiangang Ma and Yichun Liu，Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates，Advanced Electronic Materials，2018，DOI:10.1002/aelm.201800373
（12）Meng Qi，Xue Zhang，Liu Yang，Zhongqiang Wang，Haiyang Xu，Weizhen Liu，Xiaoning Zhao，and Yichun Liu，Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM，Appl. Phys. Lett. 113，223503 (2018);
(1) Y. Tao，X. H. Li，Z. Q. Wang*，H. Y. Xu*，W.T. Ding，J. G. Ma，Y. C. Liu，Improved resistive switching reliability by using dual-layer nanoporous carbon structure，Appl. Phys. Lett.，2017，111，183504.
(2) K. X. Shi，H. Y. Xu*，Z. Q. Wang*，X. N. Zhao，W. Z. Liu，J. G. Ma，Y. C. Liu，Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation，good data retention，and multilevel storage，Appl.Phys.Lett.，2017，111，223505
京公网安备 11010802027423号