个人简介
王琦,兰州大学物理科学与技术学院,青年教授,博士生导师。于2004年获得兰州大学学士学位,于2009年获得兰州大学中科院兰化所联合培养博士学位,从2011年到2014年,在日本物质材料研究机构原子开关与原子晶体管概念提出者M. Aono和T. Hasegawa教授课题组从事博士后研究及担任JST特别研究员,具体负责JST CREST项目“Atom Transistor”的研发工作。最近几年一直从事离子基两端、三端新型存储及逻辑器件、集成架构的研究。所开发的原子晶体管已列选为国际半导体技术路线图(ITRS)RED部分下一代逻辑器件的主要候选之一。目前,在Advanced Materials, Applied Physics Letter, Nanotechnology等期刊发表文章10余篇。目前主持在研国家自然科学基金2项,主持在研中央高校基本科研业务费1项,横向项目1项。近几年结题的主持项目包括国家自然科学基金青年基金、科技部国际合作项目子课题,教育部博士点基金,国家重点实验室开放基金、中央高校基本科研业务费等。参与了日英战略合作项目、JST CREST、国家863、国家基金等课题。
研究领域
主要基于半导体材料与器件的研究与开发工作,通过材料结构的设计、缺陷的控制、器件的表界面调控等实现半导体器件性能的精确控制。目前的具体研究方向如下:1. 离子基两端、三端原子开关(阻变)存储与逻辑器件 2. 离子基神经形态器件(类人脑计算器件) 3. 等离子体成膜工艺及碳基功能薄膜材料
近期论文
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[1] Qi Wang*, Yaomi Itoh Tohru Tsuruoka, Masakazu Aono and Tsuyoshi Hasegawa*,Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch, Advanced Materials 27, 6029, 2015. [2] Qi Wang*, Yaomi Itoh Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa*, and Masakazu Aono, Dynamic moderation of an electric field using a SiO2 switching layer in TaOx-based ReRAM Phys. Status Solidi RRL 9, 166, 2015. [3] Qi Wang*, Yaomi Itoh, Tsuyoshi Hasegawa, Tohru Tsuruoka, Shu Yamaguchi, Satoshi Watanabe, Toshiro Hiramoto and Masakazu Aono, Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5-x/Pt, Pt structure, Applied Physics Letters 102, 233508, 2013. [4] Qi Wang* and Deyan He*, Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device, Scientific Reports 7, 822 2017. [5] Qi Wang*; Yaomi Itoh; Tohru Tsuruoka; Tsuyoshi Hasegawa; Satoshi Watanabe; Shu Yamaguchi; Toshiro Hiramoto; Masakazu Aono, Two types of on-state observed in the operation of a redox-based three-terminal device, Key Engineering Materials 596, 111, 2014 [6] Han Xu, Qi Wang*, Yaodong Ma, Honggang Dang, Pengqian Guo, Huan Yang, Deyan He, An atomic switch using oxygenated amorphous carbon as solid electrolyte, Journal of Physics D: Applied Physics 52, 07LT01, 2019 [7] Qi Wang*, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa*, Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current, Solid State Ionics, 328, 30-34, 2018 [8] Yongfu Wang, Kaixiong Gao, Bin Zhang, Qi Wang*, Junyan Zhang*, Structure effects of sp2-rich carbon films under super-low friction contact, Carbon 137 49, 2018. [9] Qi Wang, Chengbing Wang, Zhou Wang, Junyan Zhang*, Deyan He*, Fullerene nanostructure-induced excellent mechanical properties in hydrogenated amorphous carbon, Applied Physics Letters 91, 141902, 2007. [10] Qi Wang, Chengbing Wang, Zhou Wang, Junyan Zhang*, Deyan He*, The correlation between pentatomic and heptatomic carbon rings and stress of hydrogenated amorphous carbon films prepared by dc-pulse plasma chemical vapor deposition, Applied Physics Letters 93, 131920, 2008.