个人简介
教育经历: 西安工业大学,学士毕业; 山东工业大学,硕士毕业; 北京科技大学,博士毕业 工作经历: 93年至98年: 山东工业大学, 教师; 98年至01年: 日本激光技术研究所、大阪大学激光工程中心, 研究员、博士后; 01年至今: 北京科技大学新材料国家重点实验室,副教授、教授; 04年9月至12月及06年11月至07年1月:中德政府合作计划赴德高级访问学者
研究领域
1.纳米及非晶态(涂层)材料研制; 2.超音速火焰及冷气体动力喷涂技术及装备; 3.短脉冲激光与材料相互作用及激光加工技术
近期论文
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[1]Zhou X L, Chen A F, Liu J C, Wu X K, Zhang J S. Preparation of metallic coatings on polymer matrix composites by cold spray. Surface & Coating Technology, 2011, 206: 132-136.
[2] Zhou X L, Mou S J, Wu X K, Zhang J S. Deposition behavior of mixed binary metallic powders in cold spraying process. Applied Surface Science, 2011, 257(24): 10628-10633.
[3]Zhou X L, Wu X K, Wang J G, Zhang J S. Numerical investigation of the rebounding and the deposition behavior of particles during cold spraying. Acta metallurgica sinica(English Letters), 2011, 24(1): 43-53.
[4] Wu X K, Zhou X L, Cui H, Zhang J S. Analysis of bonding features between the particles and the substrate during cold spraying. Rare Metal Materials and Engineering, 2011, 40(s3): 9-12.
[5]Zhou X L, Wu X K, Mou S J, Liu J C, Zhang J S. Simulation of Deposition Behavior of Bulk Amorphous Particles in Cold Spraying. Materials Transactions, 2010, 51(10):1977-1980.
[6]Zhou X L, Wu X K, Guo H H, Wang J G, Zhang J S. Deposition behavior of multi-particle impact in cold spraying process. International Journal of Minerals, Metallurgy and Materials, 2010, 17(5): 635-640.
[7]Zhou X L, Wu X K, Guo H H, Wang J G, Zhang J S. Deposition behavior of multi-particle impact in cold spraying process. International Journal of Minerals, Metallurgy and Materials, 2010, 17(5): 635-640.
[8]巫湘坤, 周香林, 王建国, 张济山. 冷喷涂过程中能量变化及沉积行为的模拟研究. 金属学报, 2010, 46(4): 385-389.
[9]Kai Tao, Xianglin Zhou, Hua Cui, Jishan Zhang. Microhardness variation in heat-treated conventional and nanostructured NiCrC coatings prepared by HVAF spraying, Surface and Coatings Technology, 203 (2009) 1406-1414.
[10]X. L. Zhou, W. Wen, J. S. Zhang, D. B. Sun. A mathematical model of the removal of gold thin film on polymer surface by laser ablation, Surface & Coating Technology, 190(2-3), 2005: 260-263.