张利民 - 兰州大学 - 核科学与技术学院

个人简介

教育简历（按时间倒序排序）： 1. 2003/09-2008/06，兰州大学，核科学与技术学院，硕博连读研究生 2. 1999/09-2003/06，兰州大学，物理科学与技术学院，本科生工作简历（按时间倒序排序）： 1. 2012/05-至今，兰州大学，核科学与技术学院，副教授 2. 2014/06-2015/05，美国西北太平洋国家实验室，离子加速器实验室，访问学者 3. 2008/07-2012/05，兰州大学，核科学与技术学院，讲师 4. 2009/12-2012/03，中国科学院近代物理研究所，博士后

研究领域

1. 核能材料（SiC、玻璃陶瓷）辐照损伤 2. 氮化物半导体材料（GaN、InGaN、AlGaN）离子注入改性

近期论文

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1. Limin Zhang*, Weilin Jiang*, Wensi Ai, Liang Chen, Chenlong Pan, Tieshan Wang, Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures, J. Am. Ceram. Soc. 2018, http://doi.org/10.1111/jace.15895. 2. W.S. Ai, L.M. Zhang*, W. Jiang, T.S. Wang, Raman study of InxGa1-xN (x=0.32-0.9) films irradiated with Xe ions at room temperature and 773 K, Nucl. Instrum. Methods B, 2018, 415:48-53. 3. Limin Zhang*, Weilin Jiang*, Wensi Ai, Liang Chen, Tieshan Wang, Ion irradiation induced nucleation and growth of nanoparticles in amorphous silicon carbide at elevated temperatures, J. Nucl. Mater. 2018, 505:249-254. 4. L.M. Zhang*, W. Jiang, R.C. Fadanelli, W.S. Ai, J.X. Peng, T.S. Wang, C.H. Zhang, Microstructural response of InGaN to swift heavy ion irradiation, Nucl. Instrum. Methods B, 2016, 388:30-34. 5. Limin Zhang*, Weilin Jiang, Amila Dissanayake, Jinxin Peng, Wensi Ai, Jiandong Zhang, Zihua Zhu, Tieshan Wang, Vaithiyalingam Shutthanandan, Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x =0.32?1.0) single crystals, J. Appl. Phys, 2016, 199: 244704. 6. Limin Zhang*, Weilin Jiang*, Amila Dissanayake, Tamas Varga, Jiandong Zhang, Zihua Zhu, Dehong Hu, Haiyan Wang, Charles H Henager Jr, Tieshan Wang, Grain growth of nanocrystalline 3C-SiC under Au ion irradiaton at elevated temperatures, J. Phys. D: Appl. Phys., 2016, 49: 035304. 7. L.M. Zhang*, R.C. Fadanelli, P. Hu, J.T. Zhao, T.S. Wang, C.H. Zhang, Structural damage in InGaN induced by MeV heavy ion irradiation, Nucl. Instrum. Methods B, 2015, 356-357: 53-56. 8. L.M. Zhang*, C.X. Li, J.T. Zhao, K.J. Yang, G.F. Zhang, T.S. Wang, C.H. Zhang, Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions, Nucl. Instrum. Methods B, 2013, 305: 1-4. 9. L.M. Zhang*, C.H. Zhang, C.X. Li, Y. Song, Y.F. Jin, T.S. Wang, Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations, Eur. Phys. J. Appl. Phys., 2012, 59:30101. 10. L.M. Zhang, C.H. Zhang*, L.Q. Zhang, X. J. Jia, T.D. Ma, Y. Song, Y.T. Yang, B.S. Li, Y.F. Jin, Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions, Nucl. Instrum. Methods B, 2011, 269: 1782-1785. 11. L.M. Zhang, C.H. Zhang*, L.Q. Zhang, X. J. Jia, L.H. Han, C.L. Xu, Y. Zhang, Y.F. Jin, HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions, Nucl. Instrum. Methods B, 2011, 269: 1063-1066.