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刘艳红.Improvement on synaptic properties of WOx-based memristor by doping Ti into WOx[J],Journal of Physics D: Applied Physics,2021,54(8)
黄火林.High-temperature three-dimensional GaN-based hall sensors for magnetic field detection[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(7):75003-
孙仲豪.Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(2):25109-
孙仲豪.A Novel Analytical Model for Ohmic Contacts to Planar Devices: Theoretical Design and Experimenta...[J],IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,68(1):299-306
刘艳红.Effects of W/ WO3-x junction on synaptic characteristics of W/WO3-x/ ITO memristor[J],Physica E: Low-dimensional Systems and Nanostructures 127 (2021) 114515,2021,127:114515-
Liu, Yanhong,Wang, Ruoying,Li, Zhongyue,Wang, Song,Huang, Yang,Peng, Wei.Non-switching to switching transferring mechanism investigation for Ag/SiOx/p-Si structure with...[J],JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(16)
Liu, Yanhong,Wang, Song,Gao, Ping,Zhou, Peng,Li, Jinhua,Weng, Zhankun,Pan, Lujun,Zhang, Jialiang,Li, La.Sub-band transport mechanism and switching properties for resistive switching nonvolatile memor...[J],APPLIED PHYSICS LETTERS,2015,106(6)
刘艳红,潘路军,张家良.Sub-band transport mechanism and switching properties for resistive[J],APPLIED PHYSICS LETTERS,2015,106(6)
Qiu, Y.,Liu, Y. H.,Zhao, Y.,Hu, L. Z.,Yang, D. C.,Yin, B.,Lei, J. X.,Zhang, H. Q.,Zhang, Z.,Chen, H.,Li, Y. P.,Bian, J. M..Branched ZnO nanotrees on flexible fiber-paper substrates for self-powered energy-harvesting sy...[J],RSC ADVANCES,2015,5(8):5941-5945
Liu, Yanhong,Gao, Ping,Jiang, Xuening,Li, La,Zhang, Jialiang,Peng, Wei.Percolation mechanism through trapping/de-trapping process at defect states for resistive switc...[J],JOURNAL OF APPLIED PHYSICS,2014,116(6)
Qiu, Yu,Ji, Jiuyu,Liu, Yanhong,Zhao, Yu,Luo, Yingmin,Hu, Lizhong,Lei, Jixue,Yang, Dechao,Yin, Bing,Zhang, Heqiu,Bian, Jiming.Enhanced performance of wearable piezoelectric nanogenerator fabricated by two-step hydrotherma...[J],APPLIED PHYSICS LETTERS,2014,104(11)
Liu, Yanhong,Gao, Ping,Jiang, Xuening,Bi, Kaifeng,Xu, Hongxia,Peng, Wei.Percolation network in resistive switching devices with the structure of silver/amorphous silic...[J],APPLIED PHYSICS LETTERS,2014,104(4)
刘艳红,姜雪宁,张家良,彭伟.Percolation mechanism through trapping/de-trapping process at defect states for[J],Journal of Applied Physics,2014,116(116):64505-64505
刘艳红,姜雪宁,彭伟.Percolation network in resistive switching devices with the structure of[J],Applied Physics Letters,2014,104(1):43502-43506
Zhang, Zhikun,Bian, Jiming,Bi, Kaifeng,Liu, Yanhong,Zhang, Dong,Qin, Fuwen,Liu, Hongzhu,Miao, Lihua.Synthesis of SiO2/beta-SiC/graphite hybrid composite by low temperature hot filament chemical v...[J],APPLIED PHYSICS LETTERS,2013,103(21)
Bi, Kaifeng,Liu, Yanhong,Liu, Kun,Jiang, Jiwen,Peng, Wei.Density improvement of silicon nanocrystals embedded in silicon carbide matrix deposited by hot...[J],SURFACE & COATINGS TECHNOLOGY,2013,228:148-153
Liu, W. F.,Luo, Y. L.,Sang, Y. C.,Bian, J. M.,Zhao, Y.,Liu, Y. H.,Qin, F. W..Adjusted surface work function of InN films annealed at vacuum and at high-pressure N-2 conditi...[J],MATERIALS LETTERS,2013,95:135-138
边继明,刘艳红,秦福文.Synthesis of SiO2/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor...[J],Applied Physics Letters,2013,103(21):212105-212105
刘艳红,刘琨,彭伟.Density improvement of silicon nanocrystals embedded in silicon carbide matrix[J],Surface & Coatings Technology,2013,228(4):148-153
刘艳红,申人升,梁红伟.专业课课堂实践教学的探索[J],教育教学论坛,2012,36:222-223
Liu, W. F.,Guan, J.,Bian, J. M.,Zhao, Y.,Liu, Y. H.,Zhang, B. Y.,Liu, A. M..Investigation of single field-effect surface passivation by constructing electrolyte/Si solar c...[A],2012,407-411
刘艳红.硅衬底上径向p-Si/n-Si异质结的制备[J],中国科技论文在线,2012,12(3):1-5
刘艳红.低价硅衬底上多晶硅薄膜电池的一维数值[J],中国科技论文在线,2011,11(4):1-7
刘艳红.DBD-HWCVD 沉积硅薄膜的研究[J],中国科技论文在线,2011,13(3):1-6
刘艳红,孟祥宇.热丝化学气相沉积（HWCVD）中热丝直径对非晶硅薄膜沉积的影响[J],中国科技论文在线,2011,11(3):1-5
Niu, Jinhai,Zhang, Lianlian,Zhang, Zhihui,Liu, Dongping,Liu, Yanhong,Feng, Zhiqing.Deposition of hydrogenated amorphous carbon nitride films by dielectric barrier discharge plasm...[J],APPLIED SURFACE SCIENCE,2010,256(22):6887-6892
刘艳红,刘爱民.带有本征薄层的异质结太阳能电池[J],半导体技术,2010,35(1):1-7
刘艳红.专业课教学的思考与实践——国内外“集成电路工艺”课教材对比研究及教学实践体会[J],高等理科教育,2010,10(6):1-5
Weng, Zhankun,Liu, Aimin,Sang, Yongchang,Zhang, Jiquan,Hu, Zengquan,Liu, Yanhong,Liu, Weifeng.Anodic etching of InP using neutral NaCl electrolyte[J],JOURNAL OF POROUS MATERIALS,2009,16(6):707-713
张莲莲,刘艳红,牛金海,刘东平.DBD-PECVD法制备CN薄膜的结构及性能研究[J],真空科学与技术学报,2009,29(5):479-483
周紫光,刘爱民,刘维峰,刘艳红.表面光伏谱在光电材料与器件研究中的应用[J],半导体技术,2009,34(7):679-683,714
吕博嘉,刘艳红,刘东平,刘爱民,刘韶华,马腾才.热丝CVD制备微晶硅薄膜的研究[J],真空,2008,45(1):48-50
刘爱民,刘艳红.Formation of ZnO Thin Film on n-InP(100) by Electrochemical Deposition[J],Chinese Journal of Luminescence,2008,29:283-288
翁占坤,刘爱民,刘艳红,胡增权.n型InP(100)衬底上电沉积氧化锌薄膜的[J],发光学报,2008,29(2):283-288
Weng, Zhankun,Liu, Aimin,Liu, Yanhong,Luo, Huijing,Xu, Feng,Liang, Xiuping,Du, Guotong.Formation of porous InP by cathodic decomposition[J],MICROELECTRONICS JOURNAL,2007,38(12):1191-1195
翁占坤,申慧娟,刘爱民,刘艳红,徐峰,罗慧晶.电化学刻蚀制备多孔InP[A],2006,Vol.37:324-325
刘艳红,赵宇,王美田,胡礼中,马腾才.等离子体加工对器件损伤的两种模式[J],半导体技术,2002,27(5):69-72
朱泳,刘艳红,魏希文,沈光地,陈建新,邹德恕.SiGe材料及其在半导体器件中的应用[J],半导体技术,2001,26(8):70-73
刘艳红,魏希文,许铭真,谭长华.MOS表面反型层少子时变效应研究[J],大连理工大学学报,2000,19(6):661-663
刘艳红,赵宇,王美田,胡礼中,魏希文.深亚微米MOS器件的物理、结构与工艺[J],半导体杂志,2000,01:35-39
刘艳红.等离子体技术在微细加工中的应用[J],半导体杂志,1998,04:40-44
胡礼中,李雪春,刘艳红,刘式墉.伴生高阻层电阻率的估算[J],大连理工大学学报,1998,38(6):632
刘艳红,胡礼中.日益活跃的蓝色发光材料的研究进展[J],大连理工大学学报,1997,S2:139
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