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牟宗信.非平衡磁控溅射系统离子束流磁镜效应模型[J],物理学报,2022,54(3):1378-1384
边继明.高热导石墨衬底上的ZnO基MOS器件生长及表征[A],中国物理学会;中国稀土学会,2022,212-212
崔洪涛.升级冶金级Si衬底上ECR-PECVD沉积多晶Si薄膜[J],半导体技术,2022,2:117-120
辛萍.反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析[J],物理学报,2022,2:1082-1087
秦福文.在镀铝玻璃衬底上低温沉积GaN薄膜的结晶特性[A],2008中国材料研讨会，广州，2008年11月20日－24日：E3-24，104,2022,104-104
刘胜芳.在镀铝玻璃衬底上低温沉积GaN薄膜的结晶特性[J],半导体光电,2022,4:557-562
刘国涛.在GaAs衬底表面生长GaN过程中的氮化新方法[J],半导体光电,2022,24(1):45-47
宋世巍.基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性[J],功能材料,2022,9:1473-1476
郎佳红.基于RHEED图像外延GaN基薄膜表面晶格演变分析[J],安徽工业大学学报 自然科学版,2022,24(1):67-71
郎佳红.基于双热电偶校准ECR-PEMOCVD薄膜生长温度分析研究[J],红外技术,2022,29(2):79-82
张东.Deposition and properties of highly C-oriented GaN films on diamond substrates[J],APPLIED PHYSICS A MATERIALS SCIENCE PROCESSING,2022,102(2):353-358
王三胜.用N_2-H_2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响(英文)[J],发光学报,2022,S1:24-28
汤斌.电子回旋共振氮等离子体氧化后退火对4H-SiC MOS电容TDDB特性的影响[J],固体电子学研究与进展,2022,35(2):191
张志坤.石墨衬底上低维ZnO纳米材料的生长(英文)[J],无机材料学报,2022,29(01):103-107
秦福文.碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展[J],智能电网,2022,6(1):12-17
章家岩.等离子体清洗GaAs和Al2O3衬底的RHEED图像分析[J],华中科技大学学报 自然科学版,2022,5:88-91
顾彪.立方GaN结晶薄膜生长中的ECR等离子体[A],2000年中国材料研讨会,2022,4
李慧.线形同轴耦合微波等离子体诊断及硅薄膜制备[J],哈尔滨工程大学学报,2022,3:423-426
张东.自持金刚石厚膜上GaN薄膜的沉积及其表征[A],TFC’09全国薄膜技术学术研讨会,2022,1
刘明.蓝宝石基片的处理方法对ZnO薄膜生长行为的影响[J],物理学报,2022,57(2):1133-1140
郎佳红.蓝宝石衬底分步清洗及其对后续氮化的影响[J],半导体技术,2022,30(1):57-60
秦福文.蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究[J],Pan Tao Ti Hsueh Pao Chinese Journal of Semiconductors,2022,6:668-672
陈伟绩.衬底氮化时间对玻璃衬底上低温沉积GaN薄膜结晶性的影响[J],功能材料,2022,11:1836-1839
刘宝丹.Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping[J],CRYSTAL RESEARCH AND TECHNOLOGY,2022,47(2):207-212
牟宗信.Model of the magnetic mirror effect in the unbalanced magnetron sputtering ion beams[J],Wuli Xuebao/Acta Physica Sinica,2022,54(3):1378-1384
王德君.N型4H-SiC ECR氢等离子体处理研究[J],固体电子学研究与进展,2022,29(3):334-338,416
Cai, Chengxuan.Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM[J],APPLIED SURFACE SCIENCE,2022,560
Li, Wenbo.Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study[J],Chinese Physics B,2022,26(3)
Liu, Bingbing.Passivation of SiO2/4H-SiC interface defects via electron cyclotron resonance hydrogen-nitrogen mi[J],APPLIED SURFACE SCIENCE,2022,364:769-774
Sun, Yunong.Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors[J],JOURNAL OF APPLIED PHYSICS,2022,125(18)
Gu, B.Plasma pretreatment of GaAs substrates and ECR-PAMOCVD of cubic GaN[A],2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED),2022,524-527
白亦真.Preparation and Characteristics of GaN Films on Freestanding CVD Thick[J],Chinese Physics Letters,2022,27(1):181021-181024
张东.Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films[J],Chinese Physics Letters,2022,27(1)
秦福文.Publishers Note: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed pl[J],APPLIED PHYSICS LETTERS,2022,104(26):269902-269902
Li, Xiaoxuan.Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure[J],MATERIALS RESEARCH BULLETIN,2022,77:199-204
Wang, Shuaijie.Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grow[J],COATINGS,2021,10(12)
尹志鹏.Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors[J],Applied Surface Science,2021,31(30):147312-147312
胡金娟.GO/TiO2-g-C3N4纳米复合材料的制备及可见光催化性[J],无机化学学报,2021,36(12):2240-2248
胡金娟.Ag-Ag2O/TiO2-g-C3N4纳米复合材料的制备及可见光催化性能[J],复合材料学报,2021,37(6):1401-1410
Wang, Shuaijie,Qin, Fuwen,Bai, Yizhen,Zhang, Dong.Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Diffe[J],FRONTIERS IN MATERIALS,2020,7
苏艳,秦福文,王德君.Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface qual[J],Applied Surface Science,2020,513:145837-145837
Yang, Chao,Yin, Zhipeng,Zhang, Fanglong,Su, Yan,Qin, Fuwen,Wang, Dejun.Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface qu[J],APPLIED SURFACE SCIENCE,2020,513
王宁,马春雨,胡金娟,王佳琳,秦福文,张庆瑜.MoS2/GO-g-C3N4-ZnO三元复合纳米材料的制备及可见光光催化性能研究[J],功能材料,2019,50(9):6-12
Yang, Chao,Zhang, Fanglong,Yin, Zhipeng,Su, Yan,Qin, Fuwen,Wang, Dejun.Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidat[J],APPLIED SURFACE SCIENCE,2019,488:293-302
Sun, Yunong,Wang, Dejun,Yang, Chao,Yin, Zhipeng,Qin, Fuwen.Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors[J],JOURNAL OF APPLIED PHYSICS,2019,125(18)
王三胜,顾彪,徐茵,秦福文,隋郁,杨大智.用N_2-H_2等离子体氮化GaAs衬底对ECR-PEMOCVD生长立方GaN的影响(英文)[J],发光学报,2001,S1:24-28
顾彪,隋郁,秦福文,王三胜,徐茵.立方GaN结晶薄膜生长中的ECR等离子体[A],2000,4
徐茵,从吉远,杨树人,顾彪,秦福文.GaN薄膜低温外延的ECR-PAMOCVD技术[J],半导体技术,1998,01:38-40
徐茵,夏亚红,秦福文,顾彪.氮ECR微波等离子体的电子能量分布研究[J],核聚变与等离子体物理,1997,17(3):45
顾彪,孙捷,张砚臣,丛吉远,秦福文,徐茵.GaAs衬底上立方GaN的低温生长[J],稀有金属,1998,22(2):143-145
李伯海,秦福文,吴爱民,王艳艳,徐茵,顾彪.多晶硅沉积工艺中中间层对多晶硅质量的影响[J],半导体光电,2007,28(5):685-689
顾彪,徐茵,孙凯,秦福文.（001）GaAs衬底上异质外延的立方GaN薄膜与界面[J],半导体学报,1998,19(4):241
郎佳红,秦福文,顾彪,章家岩.外延GaN基薄膜表面应变演变RHEED分析[J],微纳电子技术,2009,46(8):467-472
牟宗信,李国卿,秦福文,黄开玉,车德良.非平衡磁控溅射系统离子束流磁镜效应模型[J],物理学报,2005,54(3):1378-1384
章家岩,郎佳红,秦福文,顾彪.等离子体清洗GaAs和Al2O3衬底的RHEED图像分析[J],华中科技大学学报（自然科学版）,2005,33(5):88-91
王艳艳,秦福文,马世猛,吴爱民,王叶安.α-Al2O3上生长GaN过程中氮化的研究[J],红外与激光工程,2007,36(5):721-724
何欢,秦福文,吴爱民,王叶安,代由勇,姜辛,徐茵,顾彪.ECR-PEMOCVD技术生长的GaMnN薄膜的特性[J],半导体学报,2007,28(7):1053-1057
秦福文,顾彪,徐茵,杨大智.GaN缓冲层上低温生长AlN单晶薄膜[J],半导体光电,2003,24(1):32-36
郎佳红,顾彪,徐茵,秦福文.GaN基半导体材料研究进展[J],激光与光电子学进展,2003,40(3):45-49
王三胜,杨大智,窦宝锋,秦福文,徐茵,顾彪.GaN基材料生长及其在光电器件领域的应用[J],材料导报,2002,16(1):31-35
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