赵纪红 - 吉林大学 - 电子科学与工程学院

个人简介

赵纪红，女，1984年生，副教授。硕士生导师。本科于2006年毕业于吉林大学电子科学与工程学院微电子学系专业；分别于2008年和2011年在吉林大学电子科学与工程学院微电子学与固体电子学获得硕士和博士学位。并于2011年7月以讲师身份留校任教，2015年9月30日评为副教授。2016年12月至2017年12月期间作为国家公派访问学者在美国纽约州伦斯勒理工学院（RPI）应用物理与宇航系进行学习交流。

研究领域

基于超快激光掺杂改性的半导体材料的能源器件及光电探测传感器件研究。

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

C.-H. Li, J.-H. Zhao*, Q.-D. Chen, J. Feng, and H.-B. Sun, “Sub-bandgap photo-response of non-doped black-silicon fabricated by nanosecond laser irradiation,” Opt. Lett. 2018, in production C.-H. Li, X.-P. Wang, J.-H. Zhao*, D.-Z. Zhang, X.-Y. Yu, X.-B. Li, J. Feng, Q.-D. Chen, S.-P. Ruan, and H.-B. Sun, “Black silicon IR photodiode supersaturated with nitrogen by femtosecond laser irradiation,” IEEE Sens. J. 2018, in production X. -Y. Yu, C. -H. Li, and J. -H. Zhao*, “Study on optical and electrical properties of gold-doped silicon fabricated by femtosecond laser,” Opt. Quantum Electron. 49 (7), 247 (2017) X. -Y. Yu, J. -H. Zhao*, C. -H. Li, Q. -D. Chen, and H. -B. Sun, “Gold-hyperdoped black silicon with high IR absorption by femtosecond laser irradiation,” IEEE Trans. Nanotechnol. 16 (3), 502-506 (2017). C.-H. Li, J.-H. Zhao*, X.-Y. Yu, Q.-D. Chen, J. Feng, P.-D. Han, and H.-B. Sun, “Sulfur-doped silicon photodiode by ion implantation and femtosecond laser annealing,” IEEE Sens. J. 17 (8), 2367-2371 (2017). J.-H. Zhao, Z.-H. Lv, C.-H. Li, X.-Y. Yu, and X. -B. Li*, “The infrared photodiode of textured silicon irradiated under mixed gas by femtosecond laser”, IEEE Sens. J. 17(4), 1000-1004 (2017). Q. Wang, L. Zhang, X. Wang, H. -Y. Quan, Z. G. Chen, J.-H Zhao, X. -H Liu, L. –X. Hou, Y. J. Gao, G. Jia, and S. W. Chen, “Optical rectification and Pockels effect as a method to detect the properties of Si surfaces”, Chin. Opt. Lett. 15(6), 062401 (2017). C. -H. Li, J.-H. Zhao*, X. -Y. Yu, Q. -D. Chen, J. Feng, and H.-B. Sun, “Fabrication of black silicon with thermostable infrared absorption by femtosecond laser”, IEEE Photon. J. 8(6), 6805809 (2016). J.-H. Zhao *, T. Li, C.-H. Li, X.-Y. Yu, “Study on textured ZnS irradiated by femtosecond laser pulses”, Opt. Quantum Electron. 48 (11), 492 (2016). X.-Y. Yu, Z.-H. Lv, C.-H. Li, X. Han, and J.-H. Zhao*, “The optical and electrical properties of co-doped black silicon textured by a femtosecond laser and its application to infrared light sensing”, IEEE Sens. J. 16 (13), 5227-5231 (2016). J. -H. Zhao, C.-H. Li, and J. -N. Wang, “Properties of conical microstructures formed on silicon surfaces via nanosecond laser ablation under vacuum”, Opt. Quantum Electron. 48 (1), 22 (2016). J. -H. Zhao, C.-J. Liu, and Z.-H. Lv, “Photoluminescence of ZnO nanoparticles and nanorods”, Optik 127 (3), 1421-1423 (2016). J. -H. Zhao, C.-H. Li, Q.-D. Chen, B.-W. Cheng and H.-B. Sun, “Surface detection of strain-relaxed Si1-xGex alloys with high Ge-content by optical second-harmonic generation, IEEE J. Quantum Electron. 51 (12), 7000606 (2015). Z. -X. Y, C.-H. Li, Y. Luo, J. -H. Zhao*, H. Yang, P. Verma, and S.Kawata, “Silver hierarchical structures grown on microstructured silicon in chip for microfluidic integrated catalyst and SERS detector”, Chin. Opt. Lett. 13 (10), 102401 (2015). C. -H. Li, J.-H. Zhao*, Q. -D. Chen, J. Feng, W.-T. Zheng, and H.-B. Sun, “Infrared absorption of femtosecond laser textured silicon under vacuum”, IEEE Photon. Technol. Lett. 27 (14), 1481-1484 (2015). J.-H. Zhao, C.-H. Li, Q.-D. Chen, and H.-B. Sun, “Femtosecond laser direct writing assisted nonequilibriumly doped silicon n+-p photodiodes for light sensing, IEEE Sens. J. 15 (8), 4259-4263 (2015). J.-H. Zhao, C.-H. Li, J.-J. Xu, Y.-W. Hao, and X.-B. Li, “Surface modification of nanostructured ZnS by femtosecond laser pulsing”, Appl. Surf. Sci. 293, 332-335 (2014). J.-H. Zhao, C.-H. Li, Z.-H. Lv, Y. Xu, “Regular arrays of triangular-microstructure formed on silicon (111) surface via ultrafast laser irradiation in KOH solution”, Surf. Interface Anal. 45, 1667-1672 (2013). Q.-S. Li, L.-J. Wang, Z.-N. Tian, X.-F. Lin, T. Jiang, J. Zhang, X. Zhang, J.-H. Zhao*, A.-W. Li, and L. Qin, “Direct integration of asphericalmicrolens on vertical-cavity surface emitting laser emitting surface for beam shaping”, Opt. Commun. 300, 269-273 (2013). J.-H. Zhao, X.-B. Li, Z.-G. Chen, X. Meng, and G. Jia, “Precise measurement of weak strain by second-harmonic generation from silicon (111) surface”, J. Opt. Soc. Am. B 30 (5), 1200-1204 (2013). J.-H. Zhao, W. Su, Q.-D. Chen, Y. Jiang, Z.-G. Chen, G. Jia, and H.-B. Sun, “Strain at native SiO2/Si (111) interface characterized by strain-scanning second-harmonic generation”, IEEE J. Quantum Electron. 47 (1), 55-59 (2011). J.-H. Zhao, B.-W Cheng, Q.-D. Chen, W. Su, Y. Jiang, Z.-G. Chen, G. Jia, and H.-B. Sun, “Near-infrared femtosecond laser for studying the strain in Si1-xGex alloy films via second-harmonic generation”, IEEE Photon. J. 2 (6), 974-980 (2010).