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“Efficient Calculation of Electron Diffraction for the Structural Determination of Nanomaterials”, G.M. Gavaza, Z.X. Yu, L. Tsang, C.H. Chan, S.Y. Tong, M.A. Van Hove, Physical Review Letters, Vol. 97, p 055505 (2006) (Times Cited: 13)
“Observation of a (root 3 x root 3)-R30 degrees reconstruction on GaN(0001) by RHEED and LEED”, J. Wang, Ricky So, Y. Liu, H. S. Wu, M. H. Xie, S. Y. Tong, Surface Science 600, L169-L174 (2006) (Times Cited:7)
“Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy” Y. Liu, M. H. Xie, H. S. Wu, S. Y. Tong, Applied Physics Letters 88, 221916 (2006)
“The structure of the CoS2 (100)-(1×1) surface”, Z. X. Yu, M. A. Van Hove, S. Y. Tong, David Wisbey, Ya. B. Losovyj, Ning Wu, M. Manno, L. Wang, C. Leighton, W. N. Mei, and P.A. Dowben, Journal of Physics: Condensed Matter 19, 156223 (2007) (Times Cited: 9)
“Theory of low-energy electron diffraction for detailed structural determination of nanomaterials: Finite-size and disordered structures”, G.M. Gavaza, Z.X. Yu, L. Tsang, C.H. Chan, S.Y. Tong, M.A. Van Hove, Physical Review B 75, 235403 (2007) (Times Cited: 12)
“Multi-slice finite difference method for full potential calculation of low energy electron diffraction spectra”, H.S. Wu, J. Wang; Ricky So; S.Y. Tong, Journal of Physics:Condensed Matter 19, 386203 (2007) (Times Cited: 6)
“Theory of low-energy electron diffraction for nanomaterials – subclusters, automated searches”, G M Gavaza, Z X Yu, M A Van Hove, S Y Tong, Journal of Physics: Condensed Matter 20, 304202 (2008) (Times Cited: 6)
H. Xu, R. Q. Zhang, and S. Y. Tong, Phys. Rev. B 82, 155326 (2010). (Times Cited: 10)
X. Y. Chen, F. Fang, A. M. C. Ng, A.B. Djurišić, S. Y. Tong, “Growth of triangular ZnO nanorods by electrodeposition”, J. Electrochem. Soc. 157, K269-K272 (2010). (Times Cited: 3)
S. Y. Tong, Xu Hu, R. Q Zhang, M. K. Fung, C. T. Yip, A. M. C. Ng, F. Fang,A. B. Djurišić, 2010 3rd IEEE International NanoElectronics Conference Proceedings, P. K. Chu (Editor), IEEE Press (2010), pp 22-23.
“Interaction of O2, H2O, N2, and O3 with stoichiometric and reduce ZnO (10(1) over-bar0) surface”. Xu, H, Zhang, R. Q, Tong, S. Y. AMER PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA. (2010) (Times Cited: 9)
“A standard format for reporting atomic positions: Further needs and options”. Van Hove, MA (Van Hove, M. A.), Hermann, K (Hermann, K.), Watson, PR (Watson, P. R.), Woodruff, DP (Woodruff, D. P.), Tong, SY(Tong, S. Y.), Diehl, RD (Diehl, R. D.), Heinz, K (Heinz, K.), Minot, C (Minot, C.), Tochihara, H (Tochihara, H.). (2010)
“Splitting Water on Metal Oxide SurfacesS” Xu, H (Xu, Hu), Zhang, RQ (Zhang, RuiQin), Ng, AMC (Ng, Alan M. C.), Djurisic, AB (Djurisic, Aleksandra B.), Chan, HT (Chan, Hung Tat), Chan, WK (Chan, Wai Kin), Tong, SY (Tong, S. Y.). JOURNAL OF PHYSICAL CHEMISTRY C (2011) (Times Cited: 20)
“Interaction of O2 with reduced rutile TiO2(110) surface”. Xu, H, Tong, S. Y. SURFACE SCIENCE (2013)(Times Cited:6)
A.M. C. Ng, C. M. N. Chan, M. Y. Guo, Y. H. Leung, A. B. Djurisic, H. Xu, W. K. Chan, F. C. C. Leung, and S. Y. Tong, Antibacterial and photocatalytic activity of TiO2 and ZnO nanomaterials in phosphate buffer and saline solution, Appl. Microbiol Biotechnol 97, 5565 (2013) (Times Cited: 21)
“Recovery of clean ordered (111) surface of etched silicon”. Ng, AMC (Ng, A. M. C.), Dong, L (Dong, L.), Ho, WK (Ho, W. K.), Djurisic, AB (Djurisic, A. B.), Xie, MH (Xie, M. H.), Wu, HS(Wu, H. S.), Lin, N (Lin, N.), Tong, SY (Tong, S. Y.) Applied Surface Science (2013) (Times Cited: 1)
“Stabilizing forces acting on ZnO polar surfaces: STM, LEED, and DFT”. Xu, H, Dong, L, Shi, XQ, Van Hove, MA Van Hove, Ho, WK, Lin, N, Wu, HS, Tong, SY. PHYSICAL REVIEW B (2014) (Times Cited: 11)
J. Fan, J. Z. Zhao, H. Xu*, and S. Y. Tong, Comment on "Interplay between Water and TiO2 Anatase (101) Surface with Subsurface Oxygen Vacancy", Phys. Rev. Lett. 115, 149601 (2015) (Times Cited: 3)
“Observation and Analysis of Ordered and Disordered Structures on the ZnO(0001) Polar Surface”. Xu, H, Dong, L, Shi, XQ, Liu, Y, Van Hove, MA, Lin, N, Tong, SY. Journal of PhysicalChemistryC (2016)
“Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces”. Zhao, JZ, Fan, W, Verstraete, MJ , Zanolli, Z , Fan, J , Yang, XB , Xu, H , Tong, SY. Physical Review Letters (2016).