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个人简介

2013年毕业于南京大学,获材料物理与化学专业博士学位。2013年12月加入华中科技大学国家强磁场科学中心工作,2011-2013年在美国普度大学电子与计算机学院进行联合博士培养。实验室现在拥有300平方米的两个超净间,原子层沉积和化学气相沉积等薄膜制备仪器,丰富的电学、光学等测试仪器、5 K至400 K的探针测试平台、扫描探针显微镜和低温强磁场物性综合测试系统及光刻、干刻蚀等常规微加工设备。获得华中科技大学“学术新人奖”等荣誉称号。目前发明专利受理4项,发表国际权威期刊和国际会议论文20余篇,正在承担国家自然科学基金青年项目一项,湖北省自然科学基金面上项目一项,校自主创新基金一项。

研究领域

1)二维半导体材料的可控生长与量子输运特性 新型二维半导体材料由于其优异的电学性能和超薄体材料特性,在后摩尔时代的未来电子器件,物联网与可穿戴器件中有着广阔的应用前景,近年来成为学术界的研究热点。我们主要是通过制备此类材料的高性能电子器件,通过调控栅压,温度,光,磁场,探索其在极端条件下的量子输运现象。 2)二维半导体材料的范德华异质结功能器件 由二维材料通过定向干法转移制备而成的范德华异质结器件,可以省却传统化合物或硅基半导体异质结形成过程中的超高真空和高温生长工艺过程,并且避免了不同材料生长过程中由于晶格常数失配和热膨胀系数失配带来的结构缺陷与位错,因此可以便捷地形成独特的、类型丰富的超薄层状异质结电子和光电功能器件。

近期论文

查看导师新发文章 (温馨提示:请注意重名现象,建议点开原文通过作者单位确认)

1)Xuefei Li, Xiong Xiong, Tiaoyang Li, Sichao Li, Zhenfeng Zhang, and Yanqing Wu,Effect of Dielectric Interface on the Performance of MoS2Transistors,ACS Appl. Mater. Interfaces, December 4, 2017, DOI: 10.1021/acsami.7b14031 2)Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, and Yanqing Wu,Anomalous Temperature Dependence in Metal–Black Phosphorus Contact,Nano Lett., December 5, 2017, DOI: 10.1021/acs.nanolett.7b02278 3)Xuefei Li, Tiaoyang Li, Zhenfeng Zhang, Xiong Xiong, Sichao Li, and Yanqing Wu,Tunable Low-Frequency Noise in Dual-Gate MoS2Transistors,IEEE Electron Device Lett., DOI: 10.1109/LED.2017.2771832 4)Xuefei Li, Xiong Xiong, and Yanqing Wu,Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices,Chin. Phys. B Vol. 26, No. 3 (2017) 037307. 5)Xuefei Li, Tingting Gao, Yanqing Wu,Development of two-dimensional materials for electronic applications,Science China Information Sciences, 2016, 59 (6):1-14 6)Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Sichao Li, Tiaoyang Li, Xiong Xiong, Peide Ye, and Yanqing Wu,Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors,Nanoscale, 2016, 8, 3572–3578 7)Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang, and Yanqing Wu,Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride,ACS Nano. 2015, 10, 11382-11388. 8)Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, Yanqing Wu,Performance Potential and Limit of MoS2Transistors,Adv. Mater., 2015,27, 1547–1552. 9)Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu,High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric,IEEE Electron Device Lett., DOI: 10.1109/LED.2017.2779877 10)Mingqiang Huang, Shengman Li, Zhenfeng Zhang, Xiong Xiong, Xuefei Li, Yanqing Wu,Multifunctional high-performance van der Waals heterostructures,Nat. Nanotechnol., doi:10.1038/nnano.2017.208 11)Qingguo Gao, Xuefei Li, Mengchuan Tian, Xiong Xiong, Zhenfeng Zhang, and Yanqing Wu,Short-Channel Graphene Mixer with High Linearity,IEEE Electron Device Lett., 2017, 381168-1171. 12)Tiaoyang Li, Zhenfeng Zhang, Xuefei Li, Mingqiang Huang, Sichao Li, Shengman Li, and Yanqing WuHigh field transport of high performance black phosphorus transistors,Appl. Phys. Lett., 2017, 110, 163507. 13)Mingqiang Huang, Mingliang Wang, Cheng Chen, Zongwei Ma, Xuefei Li, Junbo Han,and Yanqing Wu,Broadband Black-Phosphorus Photodetectors with High Responsivity, Adv. Mater., 2016, 28, 3481-3485.

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