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(1) Metallic resist for phase-change lithography, Zeng BJ, Huang JZ, Ni RW, Yu NN, Wei W, Hu YZ, Li Z, Miao XS, Scientific Reports （Nature Publishing Group), volume 4, 5300, 2014. (2) Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems, Y. Li, Y. P. Zhong, J.J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng, X. S. Miao, Scientific Reports （Nature Publishing Group), volume 4, 4906，2014. (3) Ultrafast synaptic events in a chalcogenide memristor, Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, X. S. Miao, Scientific Reports （Nature Publishing Group), volume 3, 1619，2013. (4) Continuous controllable amorphization ratio of nanoscale phase change memory cells, Q. He, Z. Li, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao, Applied Physics Letters, 104, 223502, 2014 (5) Thermal dispersion and secondary crystallization of phase change memory cells, Deng Y. F., Li Z., Peng J. H., Liu C., Chen W., Miao X.S., Applied Physics Letters, 103(23), 233501, 2013 (6) Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films, Yu N.N., Tong H., Zhou J., Elbashir A.A., Miao X.S., Applied Physics Letters, 103(6), 061910, 2013 (7) Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5, Li Y., Zhong Y.P., Zhang J.J., Xu X.H., Wang Q., Xu L, Sun H.J., Miao X.S., Applied Physics Letters,103(4), 043501, 2013 (8) AgInSbTe memristor with gradual resistance tuning, Zhang J.J., Sun H.J., Li Y., Wang Q., Xu X.H., Miao X.S., Applied Physics Letters,102(18), 183513, 2013 (9) Picosecond amorphization of chalcogenides material: From scattering to ionization, Wang, P. Ju, C., Chen, W, Huang, D.Q, X. S. Miao, Applied Physics Letters, 102(11), 112108, 2013 (10) Ferromagnetism and electronic transport in epitaxial Ge1-xFexTe thin film grown by pulsed laser deposition, Liu, J.D., Miao, X.S. ; Tong, F. ; Luo, W. ; Xia, Z.C., Applied Physics Letters, 102(10), 102402,2013 (11) Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Chen W, Li Z, Peng JH, Deng YF, Miao XS, APPLIED PHYSICS LETTERS, Volume: 101, Issue: 14, Article Number: 142107, OCT 2012. (12) Amorphization and amorphous stability of Bi2Te3 chalcogenide films, Ju C, Cheng XM, Miao XS, APPLIED PHYSICS LETTERS, Volume: 100, Issue: 14, Article Number: 142114, APR 2012 (13) Insulator-metal transition in GeTe/Sb2Te3 multilayer induced by grain growth and interface barrier, Tong H, Miao XS, Yang Z, Cheng XM, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 21, Article Number: 212105, NOV 21 2011 (14) Anomalous second ferromagnetic phase transition as a signature of spinodal decomposition in Fe-doped GeTe diluted magnetic semiconductor, Tong F, Hao JH, Chen ZP, Gao GY, Tong H, Miao XS, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 20, Article Number: 202508, NOV 14 2011 (15) Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition, Tong F, Hao JH, Chen ZP, Gao GY, Miao XS, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 8, Article Number: 081908, AUG 22 2011 (16) Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse, Huang DQ, Miao XS, Li Z, Sheng JJ, Sun JJ, Peng JH, Wang JH, Chen Y, Long XM, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 24, Article Number: 242106, JUN 13 2011 (17) Thermal conductivity of chalcogenide material with superlatticelike structure, Tong H, Miao XS, Cheng XM, Wang H, Zhang L, Sun JJ, Tong F, Wang JH, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 10, Article Number: 101904, MAR 7 2011 (18)Effective method to identify the vacancies in crystalline GeTe, Tong F, Miao XS, Wu Y, Chen ZP, Tong H, Cheng XM, APPLIED PHYSICS LETTERS, Volume: 97, Issue: 26, Article Number: 261904, DEC 27 2010
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