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Shuai Wang, Jiangnan Dai*, Jiahui Hu, Shuang Zhang, Linlin Xu, Hanling Long, Jingwen Chen, Qixin Wan, Hao-chung Kuo, Changqing Chen, High Degree of Oprical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure, ACS Photonics, 2018.08 (已出版，DOI: 102.1021/ascphotonics.8b00899) Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design" by Wu, Feng; Sun, Haiding; Ajia, Idris; Roqan, Iman; Zhang, Daliang; Dai*, Jiangnan; Chen, Changqing; Feng, Zhe Chuan; Li, Xiaohang，JOURNAL OF PHYSICS D-APPLIED PHYSICS,（在线出版中，2017） Chong Zhao, Qixin Wan, Jiangnan Dai*, Jun Zhang, Feng Wu, Shuai Wang, Hanling Long, Jingwen Chen, Cheng Chen and Changqing Chen, Investigation of structure and magnetic characteristics of Ni-implanted AlGaN films, Optical and Quantum Electronics，March 2017, 49: 116. (已出版，First Online: 22 February 2017 DOI: 10.1007/s11082-017-0942-6) Renli Liang; Feng Wu; Shuai Wang; Qian Chen; Jiangnan Dai*; Changqing Chen, “Enhanced Optical and Thermal Performance of Eutectic Flip-Chip Ultraviolet Light-Emitting Diodes via AlN-Doped-Silicone Encapsulant”, IEEE Transactions on Electron Devices, 64(2) :467-471, 2017. (SCI) Renli Liang; Jun Zhang; Shuai Wang; Qian Chen; Linlin Xu; Jiangnan Dai*; Changqing Chen, “Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding Voidage”, IEEE Transactions on Electron Devices, 64 (3) :1174-1179, 2016. (SCI) Long, Hanling; Wu, Feng; Zhang, Jun; Wang, Shuai; Chen, Jingwen; Zhao, Chong; Feng, Zhe Chuan; Xu, Jintong; Li, Xiangyang; Dai, Jiangnan*; Chen, Changqing, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1-xN templates”, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49(41):415103, 2016. (SCI) Chen, Jingwen; Zhang, Jun; Dai, Jiangnan*; Wu, Feng; Wang, Shuai; Chen, Cheng; Long, Hanling; Liang, Renli; Zhao, Chong; Chen, Changqing; Tang, Zhiwu; Cheng, Hailing; He, Yunbin; Li, Mingkai, “Electroluminescence from nonpolar n-ZnO/p-AlGaN heterojunction light-emitting diode on r-sapphire”, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50(11):115101, 2017. (SCI) Wang, S.; Zhang, J.; Wu, F.; Tian, W.; Dai, J. N.; Tian, Y.; Chen, C. Q., “Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector”, PLASMONICS, 11(3) :833-838, 2016. (SCI -A类) Z. Qi, S. Li, S. Sun, W. Zhang, W. Ye, Y. Y. Fang, Y. Tian, J. N. Dai*, and C. Chen, "Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs.," NANOTECHNOLOGY 26 (2015). (SCI) J. Xu, T. Ding, J. Wang, J. Zhang, S. Wang, C. Chen, Y. Y. Fang, Z. Wu, K. Huo, and J. N. Dai*, "Tungsten Oxide Nanofibers Self-assembled Mesoscopic Microspheres as High-performance Electrodes for Supercapacitor," ELECTROCHIM ACTA 174, 728-734 (2015). (SCI) S. Wang, W. Tian, F. Wu, J. Zhang, J. N. Dai*, Z. H. Wu, Y. Y. Y. Fang, Y. Tian, and C. Q. Chen, "Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold grating," OPT EXPRESS 23, 8740 (2015). (SCI ) S. C. Sun, Z. Q. Qi, H. Q. Chen, X. H. Huang, W. Tian, F. Wu, Z. H. Wu, J. N. Dai*, and C. Q. Chen, "Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD," J ALLOY COMPD 590, 1-4 (2014). (SCI) J. Zhang, W. Tian, F. Wu, Q. Wan, Z. Wang, J. Zhang, Y. Li, J. N. Dai*, Y. Y. Fang, Z. Wu, C. Chen, J. Xu, and X. Li, "The effects of substrate nitridation on the growth of nonpolar a-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition," APPL SURF SCI 307, 525-532 (2014). (SCI) J. Zhang, W. Tian, F. Wu, S. Sun, S. Wang, J. N. Dai*, Y. Y. Fang, Z. Wu, C. Chen, J. Tai, M. Li, and Y. He, "Optical properties of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition," OPT MATER EXPRESS 4, 2346 (2014). (SCI) J. Zhang, S. Li, H. Xiong, W. Tian, Y. Li, Y. Y. Fang, Z. Wu, J. N. Dai*, J. Xu, and X. Li, "Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.," NANOSCALE RES LETT 9, 1005-1015 (2014). (SCI ) W. Tian, W. Y. Yan, J. N. Dai*, S. L. Li, Y. Tian, X. Hui, J. B. Zhang, Y. Y. Y. Fang, Z. H. Wu, and C. Q. Chen, "Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD," J PHYS D APPL PHYS 46 (2013). (SCI ) H. Xiong, J. N. Dai*, X. Hui, Y. Y. Y. Fang, W. Tian, D. X. Fu, C. Q. Chen, M. Li, and Y. He, "Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition," J ALLOY COMPD 554, 104-109 (2013). (SCI ) Y. Tian, J. Li, H. Xiong, and J. N. Dai*, "Controlled synthesis of ZnO hollow microspheres via precursor-template method and its gas sensing property," APPL SURF SCI 258, 8431-8438 (2012). (SCI ) W. Tian, W. Y. Yan, X. Hui, S. L. Li, Y. Y. Ding, Y. Li, Y. Tian, J. N. Dai*, Y. Y. Y. Fang, Z. H. Wu, C. H. Yu, and C. Q. Chen, "Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition," J APPL PHYS 112, 63526 (2012). (SCI )
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