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研究领域

目前主要从事宽禁带半导体光电器件(包含发光二极管LED和探测器)、半导体低维结构功能性量子调控器件等领域的研究工作。

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Renli Liang; Jun Zhang; Shuai Wang; Qian Chen; Linlin Xu; Jiangnan Dai; Changqing Chen, “Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding Voidage”, IEEE Transactions on Electron Devices, 64 (3) :1174-1179, 2016. Long, Hanling; Wu, Feng; Zhang, Jun; Wang, Shuai; Chen, Jingwen; Zhao, Chong; Feng, Zhe Chuan; Xu, Jintong; Li, Xiangyang; Dai, Jiangnan; Chen, Changqing, “Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1-xN templates”, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49(41):415103, 2016. Renli Liang; Feng Wu; Shuai Wang; Qian Chen; Jiangnan Dai; Changqing Chen, “Enhanced Optical and Thermal Performance of Eutectic Flip-Chip Ultraviolet Light-Emitting Diodes via AlN-Doped-Silicone Encapsulant”, IEEE Transactions on Electron Devices , 64(2) :467-471, 2017. Wang, S.; Zhang, J.; Wu, F.; Tian, W.; Dai, J. N.; Tian, Y.; Chen, C. Q., “Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector”, PLASMONICS, 11(3) :833-838, 2016. Sun, SC; Fu, K; Yu, GH; Zhang, ZL; Song, L; Deng, XG; Qi, ZQ; Li, SM; Sun, Q; Cai, Y; Dai, JN; Chen, CQ; Zhang, BS, “AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation”, APPLIED PHYSICS LETTERS, 108 (1) :013507, 2016. Wei Zhang, Jin Xu, Wei Ye, Yang Li, Zhiqiang Qi, Jiangnan Dai, Zhihao Wu, Changqing Chen, Jun Yin, Jing Li, Hao Jiang and Yanyan Fang. "High-performance AlGaN metal–semiconductor–metal solar- blind ultraviolet photodetectors by localized surface plasmon enhancement." Applied Physics Letters 106.2 (2015): 021112. S. Wang, W. Tian, F. Wu, J. Zhang, J. N. Dai, Z. H. Wu, Y. Y. Fang, Y. Tian, and C. Q. Chen. "Efficient optical coupling in AlGaN/GaN quantum well infrared photodetector via quasi-one- dimensional gold grating." Optics express 23.7 (2015): 8740-8748. Zhiqiang Qi, Senlin Li, Xuhua Huang, Shichuang Sun, Wei Zhang, Wei Ye, Jiangnan Dai, Zhihao Wu, Changqing Chen, Yu Tian, and Yanyan Fang. "Influence of high-temperature post growth annealing under different ambience on GaN quantum dots grown via Ga droplet epitaxy." Optical Materials Express 5.7 (2015): 1598-1605. F. Wu, W. Tian, J. Zhang, S. Wang, Q. X. Wan, J. N. Dai, Z. H. Wu, J. T. Xu, X. Y. Li, Y. Y. Fang, and C. Q. Chen. "Double-resonance enhanced intersubband second-order nonlinear optical susceptibilities in GaN/AlGaN step quantum wells." Optics express 22.12 (2014): 14212-14220. X. W. Yuan, L. Shi, Qi Wang, C. Q. Chen, X. H. Liu, L.X. Sun, Bo Zhang, J. Zi, and Wei Lu. "Spontaneous emission modulation of colloidal quantum dots via efficient coupling with hybrid plasmonic photonic crystal." Optics express 22.19 (2014): 23473-23479. Jun Yin , Yang Li , Shengchang Chen , Jing Li , Junyong Kang , Wei Li , Peng Jin , Yonghai Chen , Zhihao Wu , Jiangnan Dai , Yanyan Fang , and Changqing Chen, Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells, Adv. Optical Mater. 2014, DOI: 10.1002/adom.201300463 Jun Zhang, Wu Tian, Feng Wu, Shichuang Sun, Shuai Wang, Jiangnan Dai, Yanyan Fang, Zhihao Wu, Changqing Chen, Jiali Tai, Mingkai Li, and Yunbin He. "Optical properties of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition." Optical Materials Express 4.11 (2014): 2346-2354. Yang Li, Shengchang Chen, Man Kong, Senlin Li, Wu Tian, Shichuang Sun, Zhihao Wu, Yanyan Fang, Jiangnan Dai, and Changqing Chen, Defect reduction in Si-doped Al0.45Ga0.55N films by SiNx interlayer method,J. Appl. Phys. 043503 (2014). Jun Yin, Chuang Yue, Yashu Zang, Ching-Hsueh Chiu, Jinchai Li, Hao-Chung Kuo, Zhihao Wu, Jing Li, Yanyan Fang and Changqing Chen. "Effect of the surface-plasmon–exciton coupling and charge transfer process on the photoluminescence of metal–semiconductor nanostructures." Nanoscale 5.10 (2013): 4436-4442. F. Wu, W. Tian, W.Y. Yan, J. Zhang, S.C. Sun, J.N. Dai , Y.Y. Fang, Z.H. Wu, and C.Q. Chen, THz intersubband transition in GaN/AlGaN step quantum well, J. Appl. Phys. 113, 154505 (2013) Wu Tian, W Y Yan, J N Dai, S L Li, Y Tian, Xiong Hui, J B Zhang, Y Y Fang, Z H Wu and CQ Chen, Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD, J. Phys. D: Appl. Phys. 46 (2013) 065303 (6pp) Wei Zhang, Jianbao Zhang, Zhihao Wu, Shengchang Chen, Yang Li, Yu Tian, Jiangnan Dai, Changqing Chen, and Yanyan Fang, Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition J. Appl. Phys. 113, 094503 (2013) W. Tian, W.Y. Yan, Xiong Hui, S.L. Li, Y.Y. Ding, Y. Li, Y. Tian, J.N. Dai, Y.Y. Fang, Z.H. Wu, C.H. Yu, and C.Q. Chen, Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by MOCVD, J. Appl. Phys.112, 063526 (2012). Jianbao Zhang, Zhihao Wu, Yang Li, Jin Xu, Wei Zhang, Hui Xiong, Yu Tian, Jiangnan Dai, Yanyan Fang, and Changqing Chen, Improved Performance of GaN-Based Light-Emitting Diodes via AlInGaN/InGaN Electron-Emitting Layer, Appl. Phys. Express 5(2012) 112101. Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki, Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (101) semipolar GaN, Appl. Phys. Lett. 98, 051902-1-3 (2011)

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