程晓敏 - 华中科技大学 - 光学与电子信息学院

个人简介

2015.01-现在：华中科技大学教授 2011.08-2012.09：美国明尼苏达大学访问学者 2002.03-2014.12：华中科技大学讲师，副教授 2002.09-2008.06：华中科技大学在职博士研究生 1999.07-2001.08：新加坡国立大学硕士研究生 1996.06-1999.07华中理工大学助教 1992.09-1996.06：华中理工大学本科学习

研究领域

信息存储材料及器件，包括磁随机存储器材料及器件、相变随机存储器材料及器件、半导体存储器及器件、磁记录介质技术等；磁性材料；功能薄膜材料

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] Wang S, Guan XW,Cheng XM*, Lian C, Huang T，Miao XS，Spin-wave propagation steered by electric field modulated exchange interaction，SCIENTIFIC REPORTS,6, 2016, 31783 [2] Lu B,Cheng XM*, Feng JL, Guan XW, and Miao XS, Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input,APPLIED PHYSICS LETTERS, Volume 109, 2016, 023506 [3] Ju C,Cheng XM*, Miao XS, Amorphization and amorphous stability of Bi2Te3 chalcogenide films,APPLIED PHYSICS LETTERS, Volume 100, 2012, 142114 [4] X. W. Guan,X. M. Cheng*, T. Huang, S. Wang, K. H. Xue, and X. S. Miao, Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal,JOURNAL OF APPLIED PHYSICS,119, 2016, 133905 [5] Jindong Liu,Xiaomin Cheng*, Fei Tong, and Xiangshui Miao, Spin-glass behavior and anomalous magnetoresistance in ferromagnetic Ge1-xFexTe epilayer,JOURNAL OF APPLIED PHYSICS, Volume 116, 2014, 043901 [6] X. W. Guan,X. M. Cheng*, T. Huang, and X. S. Miao, Interface structure and magnetism of CoFe/A1-FePt films with perpendicular magnetic anisotropy,JOURNAL OF APPLIED PHYSICS, Volume 116, 2014, 116, 213910 [7] X.W. Guan,X. M. Cheng*, S. Wang, T. Huang, K.H. Xue,and X.S. Miao, Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy,JOURNAL OF ELECTRONIC MATERIALS,Vol.45, No. 6, 2016, p3162-3166 [8] T.Huang,X.M.Cheng*, X.W.Guan, and X.S Miao, Effect of the Chalcogenide Element Doping on the Electronic Properties of Co2FeAl Heusler Alloys,JOURNAL OF ELECTRONIC MATERIALS,, Vol. 45, No. 2, 2016, p1028-1034 [9] N. LIU, C. JU,X.M.CHENG*, and X.S. MIAO, Surface Band Tuning of Bi2Te3 Topological Insulator Thin Films by Gas Adsorption,JOURNAL OF ELECTRONIC MATERIALS,Vol. 43, No. 9, 2014，p3105-3109 [10]F.Tong, J.D.Liu,X.M.Cheng*, J.H.Hao, G.Y.Gao, H.Tong, X.S.Miao, Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film,THIN SOLID FILMS, Volume 568, 2014, p70–73 [11]Jindong Liu,Xiaomin Cheng*,Fei Tong, and Xiangshui Miao, Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1-xFexTe,JOURNAL OF ALLOYS AND COMPOUNDS，Vol.650, 2015, 70-74 [12]Adam Abdalla Elbashir Adam,Xiaomin Cheng*, Xiawei Guan, Xiangshui Miao, Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,117, 2115–2119 [13]T.Huang,X.M.Cheng*, X.W.Guan, and X.S Miao, Effect of Ultrathin Inserted Ag Layer on Perpendicular Magnetic Anisotropy of CoFeB Thin Film,IEEE TRANSACTIONS ON MAGNETICS,2014, VOL. 50, NO. 11, 4400904 [14]T.Huang,X.M.Cheng*,X.W.Guan, and X.S Miao, Improvement of the Half-Metallic Stability of Co2FeAl Heusler Alloys by GeTe-Doping,IEEE TRANSACTIONS ON MAGNETICS,2015, VOL. 51, NO. 11, 2600504 [15]Adam Abdalla Elbashir Adam,Xiaomin Cheng*,Xiang shui Miao, Thickness dependence and Magnetization Behavior of Mn-doped GeTe Phase Change Materials,JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS,2015, 26: 5202–5208